• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.2
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• pp.100-108
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• 2014

In this paper, we design SSD(simultaneous single band duplex) system using RF(radio frequency) cancellation and digital cancellation. we analyze characteristic of residual self-interference after RF Cancellation signal when error of phase shifter occur in RF cancellation. When phase shifter error of $0^{\circ}$, $0.5^{\circ}$, $1^{\circ}$ and $2^{\circ}$ occur in RF cancellation, residual self-interference signal power after RF cancellation is bigger than desired signal power of distant station. So, it is impossible to receive transmit data of distant station. but we confirm that it is possible to receive transmit data of distant station by digital cancellation with frame structure. Also, in digital cancellation with frame structure, if residual self-interference signal after RF cancellation is too large then LMS algorithm requires more time to estimate self-interference channel. That is, performance degradation occurs because self-interference channel estimation has not completed in estimation frame.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.11A
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• pp.1104-1109
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• 2005

In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order($3f_{LO}$) with respect to a fundamental LO frequency($f_{LO}$), which can make the high-order mixing element($f_{RF}{\pm}3f_{LO}$) to be greater than other mixing elements, Pumping a RF frequency($f_{RF}$) and LO frequency($f_{LO}$). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency($3f_{LO}-f_{RF}$=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element($3f_{LO}$=34.5 GHz) as pumping LO frequency($f_{LO}$=11.5 GHz) With respect to RF Sequency ($f_{RF}$=33.5GHz)

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.312-317
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• 2015

In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasitic capacitance in the gate-to-source ($C_{gs}$) and gate-to-drain ($C_{gd}$) configurations. The radio frequency (RF) performance of multi-finger MOSFETs, such as cut-off frequency ($f_T$) and maximum-oscillation frequency ($f_{max}$) improved by approximately 10% by reducing the parasitic capacitance about 8.2% while maintaining the DC performance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1C
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• pp.55-64
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• 2010

In this paper, we propose a new compensation scheme for combined channel distortions and RF impairments based on the analysis of the impacts of IQ(In-phase/Quadrature) imbalance and phase noise on the OFDM(Orthogonal Frequency Division Multiplexing) system in the direct conversion transceiver and frequency selective fading channel distortion. The proposed scheme estimates the combined distortion by the use of training symbols and the residual distortion by pilot symbols and compensates the combined distortion, including IQ imbalance, phase noise and multipath fading at the same time. The simulation results show that the proposed scheme compensates the combined distortion of IQ imbalance, phase noise and multipath fading simultaneously.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.492-492
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• 2012

RF biased inductively coupled plasma (ICP) has been widely used in various semiconductor etching processes and laboratory plasma researches. However, almost researches for the RF bias have been focused on the controls of dc self-bias voltages, even though the RF bias can change plasma parameters, such as electron temperature, plasma density, electron energy distribution (EED), and their spatial distributions. In this study, we report on the effect of the RF bias on the plasma parameters and the EEDs with various external parameters, such the RF bias power, the ICP power, the gas pressure, the gas mixture, and the frequency of RF bias. Our study shows the correlation between the RF bias and the plasma parameters and gives a crucial key for the understanding of collisionless electron heating mechanism in the RF biased ICP.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.4
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• pp.195-201
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• 2002

We propose a new scheme of high-resolution heterodyne interferometer that employs the two-axial mode He-Ne laser with an inter-mode beat frequency of 600~1000 MHz. An electronic RF-heterodyne circuit lowers the beat frequency down to 5 MHz, so that the phase change of the interferometer output is precisely measured with a displacement resolution of 0.1 nanometer without significant loss of dynamic bandwidth. A thermal control scheme is adopted to stabilize the cavity length with ainus to suppress frequency drifts caused by the phenomena of frequency pulling and polarization anisotropy of the two-axial made laser to a stability level of 2 parts in $10^9$. The two-axial mode HeNe laser yields a high output power of 2.0 mW, which allows us to perform multiple measurements of up to 10 machine axes simultaneously.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.470-476
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• 2008

In this paper, we describe the cause of TDMA noise and distinction method of TDMA noise source in a GSM mobile phone. The causes of TDMA noise are composed of RF(Radio Frequency) energy coupling and low frequency energy coupling by burst ripple. We propose the distinction method of TDMA noise source from output(TDMA noise measurement) and frequency response of a system(audio path). Especially we propose a method of insertion loss($S_{21}$) analysis and the improvement method for RF energy coupling. Capacitor(40 pF) is a solution to reduce RF energy coupling and therefore TDMA noise was reduced by 10 dB.

• Journal of Aerospace System Engineering
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• v.16 no.3
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• pp.73-83
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• 2022

The purpose of this paper was to identify a method to improve received noise in a specific frequency band, caused by RF radiation signals during aircraft operation. The communication equipment of the aircraft is critical to the performance and safety of the flight mission, as it is responsible for the function of internal and external communications. Noise-free, clean communication quality, as well as transmission and receiving functions have to be implemented. Thus, the cause analysis of the reception noise in a specific frequency band, was analyzed through trouble shooting. The receiving noise due to the RF radiation signal emitted from the subsystem unit inside the aircraft, was improved by shielding with a CAP with electroless nickel plating applied. Additionally, the measurement and verification results of the improvement method are also described.

• Journal of Space Technology and Applications
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• v.1 no.3
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• pp.364-374
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• 2021

This research discusses the change in radio frequency (RF) characteristics according to the number of Gores on the deployable mesh antennas for potential micro-satellite applications. The deployable type of lightweight mesh antenna can be used for various space missions such as communication/SAR/ SIGINT. In order to implement an ideal curvature of antenna surface, sufficient number of antenna rib structures are required. However, the increase in antenna ribs affects various design factors of the antenna system, especially total system mass, complexity of deployable mechanism and reliability. In this paper, the proper number of ribs for the mesh antenna were derived by comparison of electro-magnetic (EM) simulation results of example of antenna model in accordance with the various number of ribs.

• ETRI Journal
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• v.40 no.2
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• pp.167-179
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• 2018

This paper proposes an IEEE 802.15.4m compliant TV white-space orthogonal frequency-division multiplexing (TVWS)-(OFDM) radio frequency (RF) transceiver that can be adopted in advanced metering infrastructures, universal remote controllers, smart factories, consumer electronics, and other areas. The proposed TVWS-OFDM RF transceiver consists of a receiver, a transmitter, a 25% duty-cycle local oscillator generator, and a delta-sigma fractional-N phase-locked loop. In the TV band from 470 MHz to 698 MHz, the highly linear RF transmitter protects the occupied TV signals, and the high-Q filtering RF receiver is tolerable to in-band interferers as strong as -20 dBm at a 3-MHz offset. The proposed TVWS-OFDM RF transceiver is fabricated using a $0.13-{\mu}m$ CMOS process, and consumes 47 mA in the Tx mode and 35 mA in the Rx mode. The fabricated chip shows a Tx average power of 0 dBm with an error-vector-magnitude of < 3%, and a sensitivity level of -103 dBm with a packet-error-rate of < 3%. Using the implemented TVWS-OFDM modules, a public demonstration of electricity metering was successfully carried out.