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A Ka-band Harmonic Miter Design Using Multiplier Theory  

Go Min-Ho (인하대학교 전자공학과 초고주파 및 항공전자통신 연구실)
Kang Suk-Youb (인하대학교 전자공학과 초고주파 및 항공전자통신 연구실)
Park Hyo-Dal (인하대학교 전자공학과 초고주파 및 항공전자통신 연구실)
Abstract
In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order($3f_{LO}$) with respect to a fundamental LO frequency($f_{LO}$), which can make the high-order mixing element($f_{RF}{\pm}3f_{LO}$) to be greater than other mixing elements, Pumping a RF frequency($f_{RF}$) and LO frequency($f_{LO}$). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency($3f_{LO}-f_{RF}$=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element($3f_{LO}$=34.5 GHz) as pumping LO frequency($f_{LO}$=11.5 GHz) With respect to RF Sequency ($f_{RF}$=33.5GHz)
Keywords
harmonic mixer; Ha-band; multiplier; CaAs MESFET;
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