• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.4
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• pp.25-30
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• 1971

Fabrication and measurements of the magnetically tunable YIG band pass or stop filter at X-band are discussed. Using two YIG spheres located at the region of r-f circularly polarized magnetic field between the strip lines, the pass or stop characteristics of the filter are obtained. In the case of band stop, the output level is typically 25db lower than the input power. Contrarily for the pass band, the pass band level is 22db higher than the stop frequency region. The experimental results are in good agreement with the theoretical values of FMR. Further it is shown that the structure can be used for a directional coupler.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1488-1490
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• 2000

ZnO:Cu thin films are deposited by using an RF magnetron co-sputtering system with Cu chips attached on ZnO target. Structural and electrical properties are analyzed as a function of deposition conditions, such as Cu chip areas, $O_2/(Ar+O_2)$ ratios, and working pressures, The results show that a higher electrical resistivity above $10^{10}$ ${\Omega}cm$ along with an excellent c-axial growth can be easily achieved by Cu-doping. SAW filters based on the ZnO:Cu films are also fabricated to estimate the electric-mechanical coupling coefficient($K^{2}_{eff}$). Higher $K^{2}_{eff}$ and lower insertion losses are observed for ZnO:Cu films, compared with those for ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.559-562
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• 2004

The $high-T_c$ Superconducting(HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna HTS $YBa_2Cu_3O_{7-x}$(YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50\Omega$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24 % in efficiency, and 14.6 dB in the return loss superior to the normal conducting counterpart.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.438-438
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• 2010

The abnormal behavior of the argon metastable density during the E-H mode transition in argon ICP discharge was investigated. Lots of investigations including global models expected that during and after the mode transition of ICP discharge, the density of metastable increases with applied rf power (i.e. electron density). However, recent direct measurement of metastable density revealed that the metastable density of argon decreases with the applied power during and after the mode transition. This result may not be explained by the previous global model which is based on the assumption of the Maxwellian electron energy distribution function (EEDF). In this paper, to explain this abnormal behavior with simple manners, a simple global model taking account of the effect of the non-Maxwellian EEDFs incorporating into a set of coupled rate equations is proposed. The result showed that the calculated metastable density taking account of non-Maxwellian EEDF and its evolution during the transition has an abnormal behavior with electron density and is in good agreement with the previous measurement results, indicating the close coupling of electron kinetics and the behavior of metastable density. The proposed simple model is expected to provide qualitative kinetic insight to understand the behavior of the metastable density in various plasma discharges which typically exhibit non-Maxwellian distribution.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.91-97
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• 2004

This paper presents the development of InGaAsP multiple quantum well asymmetric Fabry-Perot modulators(AFPM), which have a vertical structure and high performance and describes measurements of devices operating at 10GHz for next generation broadband wireless communication applications such as picocell systems. Advantages of the AFPM include low drive voltage, which is less than -2V, and -3dB coupling loss, good flatness of the frequency response and simple fiber alignment. A simple link demonstration has been introduced, resulting in 92dB/Hz spurious free dynamic range and 40dB inter-modulation distortion. This modulator could be use for broadband radio over fiber systems such as picocell and multiple RF links.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.475-485
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• 2010

This paper proposes a novel concept for a microstrip resonator that can function as a filter and as an antenna at the same time. The proposed structure consists of an outer ring, an open loop-type inner ring, a circular patch, and three ports. The frequencies where the proposed structure works as a filter and as an antenna, respectively, are determined primarily by the radius of the inner ring and the circular patch. The measured results show that, when the microstrip resonator operates as a filtering device, this filter has about 15.1 % bandwidth at the center frequency of 0.63 GHz and a minimum insertion loss of 1.5 dB within passband. There are three transmission zeros at 0.52 GHz, 1.14 GHz, and 2.22 GHz. In the upper stopband, cross coupling - taking place at the stub of the outer ring - and the open loop-type inner ring produce one transmission zero each. The circular patch generates the dual-mode property of the filter and another transmission zero, whose location can be easily adjusted by altering the size of the circular patch. The proposed structure works as an antenna at 2.7 GHz, showing a gain of 3.8 dBi. Compared to a conventional patch antenna, the proposed structure has a similar antenna gain. At the resonant frequencies of the filter and the antenna, high isolation(less than -25 dB) between the filter port and the antenna port can be obtained.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1064-1069
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• 2007

This paper proposes the highly miniaturized active $90^{\circ} power combiner for application to MMIC. Conventional passive $90^{\circ} power combiners can't be integrated on MMIC because of their very larger size. Therefore, the highly miniaturized $90^{\circ} power combiners are required for a development of highly integrated MMIC. For this paper, the highly miniaturized active $90^{\circ} power combiner employing InGaP/GaAs HBT was fabricated on GaAs substrate for application to highly integrated MMIC. A size of fabricated active $90^{\circ} power combiner was $2.42{\times}1.05$ mm, which was 2.2 % of conventional passive $90^{\circ} power combiner. The fabricated active $90^{\circ} power combiner showed a gain characteristic about 10 dB and a good phase-difference coupling characteristic of $-92.6^{\circ} than conventional passive $90^{\circ} power combiner at 2.4 GHz. The highly miniaturized active $90^{\circ} power combiner exhibited good RF performances comparable to conventional passive $90^{\circ} power combiners. This work is the first report of an active $90^{\circ} power combiner.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.8 s.338
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• pp.47-54
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• 2005

The design method for a dual frequency antenna using CPW feed lines is presented. The antenna structures can be simplified by CPW feed lines and easily designed on integrated circuits. The presented antenna has two resonant frequency ranges and each respective resonant frequency is determined by its own length of monopole antenna. We used an impedance matching method by using a monopole coupling related to the ground of CPW feed lines As a result, the resonant frequencies were 5.25[GHz] and 23.5[GHz] and their bandwidths $35.2\%,\;and\;41.3\%$, respectively, and also, the separation of the two frequencies $370\;%$. We presented an analytical designing method to implement a dual frequency monopole antenna and showed simple antenna structures having two frequency ranges for RFIC Integrations.