• Title/Summary/Keyword: RF Communication

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RF Loss Minimization Method Using High Impedance Filter for Research (High Impedance Filter를 이용한 RF Loss 최소화 방법에 대한 연구)

  • Wang, Hyun-Chul;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.55-60
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    • 2020
  • This study designed High impedance filter to reduce RF loss to heater heating wire and increase RF current flowing to heater ground wire. Effects such as D / R improvement and process reproducibility could be seen. In addition, RF parameter distribution optimization was possible by understanding the RF path of PE-CVD equipment using Plasma and designing filter.

Study on the RF-Swithch for Mobile Communication (이동통신용 RF-Switch 개발에 관한연구)

  • 이재영
    • Journal of the Microelectronics and Packaging Society
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    • v.4 no.2
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    • pp.79-83
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    • 1997
  • 본 연구에서는 휴대용 전화기 및 무선 LAN 의 핵심부품인 RF-Switch Module의 초소형화 설계기술, 표면실장기술, 고주파설계기술, 소형화 SMD기술, Test 기술 및 RF-Switch Module 활용기술 등을 개발하였으며 RF-Switch Module의 설계기반 마련 및 대외 경쟁력 있는 RF-Switch Module의 초소형화 기술을 확보하였다.

15×15 Kernel Block Adaptive Median Filter based on LED Illumination Detection Algorithm for Low Rate CamCom (15×15 Kernel Block Adaptive Median Filter를 적용한 저속 카메라 통신용 LED 조명 검출 알고리즘 연구)

  • Han, Jungdo;Lee, Minwoo;Cha, Jae Sang
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.17 no.5
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    • pp.143-150
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    • 2018
  • With the rapid development of RF based high speed wireless communication technology, devices that can be applied to IoT networks based on RF bandwidth are rapidly spreading, nevertheless, the development speed of the RF communication is not possible to keep up with the spread of the RF band for wireless communication. In this situation, OWC technology that uses visible light source as a transmitter is attracting attention as a technology that can overcome the band exhaustion problem of RF based wireless communication technology. Although, due to the distortion of the LED illumination shape by camera exposure time and LED blinking period, the LED illumination detection rate is degraded and the RoI setting is inaccurate. In this paper, we propose an adaptive median filter applied LED illumination detection algorithm for low rate CamCom, it is possible to detect a clear RoI and LED illumination. This research will be able to play a role as a complementary material of RF based wireless communication technology efficiently.

Analysis of the RF Link Design for ETCS and Study on the Communication Zone by the Antenna Beam Pattern (ETCS용 RF 링크 설계와 안테나 빔 패턴에 의한 통신 영역 연구)

  • Yim Choon-Sik;Ha Jae-Kwon;Ahn Dong-Hyun
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.1 s.4
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    • pp.21-30
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    • 2004
  • This paper describes the design of RF link between RSE and OBU of ETCS and the analysis of the antenna beam pattern to get a proper communication area in the cross direction and traveling direction of lanes. This stage should be performed prior to determination of system requirements of ITS service based on active DSRC. This study is important and fundamental technical analysis to design and implement base station of ETCS.

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Conceptual Design of the RF Links for KASS Satellite Communication System (KASS 위성통신시스템 RF 링크 기본 설계)

  • You, Moonhee;Sin, Cheon Sig
    • Journal of Satellite, Information and Communications
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    • v.11 no.3
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    • pp.12-17
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    • 2016
  • ICAO (International Civil Aviation Organization) recommends the introduction of SBAS (Satellite Based Augmentation System) in 2025, which provides GNSS (Global Navigation Satellite System) correction data and the ranging signal via GEO (geostationary earth orbit) satellites to GNSS users. In this paper, we present the basic design results of the satellite communication system RF link for the Korean SBAS systems, KASS (Korea Augmentation Satellite System) which is going on the development & implementation. KASS RF link was designed in consideration of both the C-band and Ku-band uplinks to meet the international standard requirements for the SBAS system, and identified the minimum EIRP and G/T performance of the KASS uplink station for each frequency band. These analysis results for the RF link design are expected to be used for an effective design of the subsystem specifications for KASS satellite communication system.

The Study on the implementation and design of the RF transceiver for fast frequency hopping (고속주파수 도약용 RF송수신기 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung;Kim, Jong-Sung;Bae, Moon-Kwan
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.6
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    • pp.591-596
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    • 2016
  • This paper presents a study on the subject for the design and implementation of high-speed frequency hopping RF transceiver used for tactical communications systems. Jump the transmission / reception frequency of the L-band to hop tens per second is possible by maximizing the immunity to interference, and is applicable to communication systems having a charging rotation function. To high-speed frequency hopping it is necessary to apply the necessary fast frequency hopping scheme DDS Driven PLL added. In this paper, the RF transceiver design and simulation analysis capabilities with fast frequency tactical communication systems, were implemented after the main test for functionality and performance. Was demonstrated hop high-speed jump tens per second through a test, the main transmission output, were measured RF key performance, such as received noise figure, by using the VSG and VSA generates a ${\pi}/4$ DQPSK modulated signal constellation and by EVM measurement that there is no problem in applying the communications system described above was pre-validated.

RF CMOS 기술을 이용한 이동통신용 부품기술 동향

  • 김천수
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.49-59
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    • 2001
  • Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the growing needs for lowcost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology so far, much of them have been developed in ETRI, and from them forecasts technology trends in the near future.

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RF CMOS 기술의 현재와 미래

  • Kim, Cheon Su;Yu, Hyeon Gyu
    • The Magazine of the IEIE
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    • v.29 no.9
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    • pp.1020-1020
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    • 2002
  • Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the growing needs for low-cost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology, which is classified into device technology and circuit technology and from them forecasts technology trends in the near future.

RF CMOS 기술의 현재와 미래

  • 김천수;유현규
    • The Magazine of the IEIE
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    • v.29 no.9
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    • pp.18-30
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    • 2002
  • Wireless communication systems will be one of the biggest drivers of semiconductor products over the next decade. Global Positioning System (GPS) and Blue-tooth, HomeRF, and Wireless-LNA system are just a few of RF-module candidate awaiting integration into next generation mobile phone. Motivated by the generation mobile phone. Motivated by the growing needs for low-cost and multi-band/multi-function single chip wireless transceivers, CMOS technology has been recognized as a most promising candidate for the implementation of the future wireless communication systems. This paper presents recent developments in RF CMOS technology, which is classified into device technology and circuit technology and from them forecasts technology and from them forecasts technology trends in the near future.

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DC and RF Characteristics of $Si_{0.8}Ge_{0.2}$ pMOSFETs: Enhanced Operation Speed and Low 1/f Noise

  • Song, Young-Joo;Shim, Kyu-Hwan;Kang, Jin-Young;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.25 no.3
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    • pp.203-209
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    • 2003
  • This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

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