• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.381-391
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• 2010

In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.153-153
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• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.25-30
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• 2004

In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.143-149
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• 2008

A novel compact model for a five-port transformer balun is proposed for the efficient circuit design of hybrid balun. Compared to the conventional model, the proposed model provides much faster computation time and more reasonable values for the extracted parameters. The hybrid balun, realized in $0.18\;{\mu}m$ CMOS, achieves 2.8 dB higher gain and 1.9 dB lower noise figure than its passive counterpart only at a current consumption of 0.67 mA from 1.2 V supply. By employing the hybrid balun, a differential zero-IF receiver is designed in $0.18\;{\mu}m$ CMOS for IEEE 802.15.4 ZigBee applications. It is composed of a differential cascode LNA, passive mixers, and active RC filters. Comparative investigations on the three receiver designs, each employing the hybrid balun, a simple transformer balun, and an ideal balun, clearly demonstrate the advantages of the hybrid balun in fully differential CMOS RF receivers. The simulated results of the receiver with the hybrid balun show 33 dB of conversion gain, 4.2 dB of noise figure with 20 kHz of 1/f noise corner frequency, and -17.5 dBm of IIP3 at a current consumption of 5 mA from 1.8 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.135-140
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• 2009

This paper discusses how to change the electromagnetic waves' property in the cut-off causing discontinuity existing in the guiding structure of the RF passive component by using the metamaterial and elaborates on its principle. Particularly, we find and explain, from the viewpoint of electromagnetics and circuit theories, the so-called tunneling condition that when the segment with an extremely narrow cross-section leading to blockage in the parallel-plate waveguide is given the ENZ(Epsilon Near Zero) for its filling material, the wave starts to propagate through the segment. The analysis method as a transmission-line theory taking the discontinuity and material change into consideration is shown valid through the comparison with other methods for analyzing parallel-plate waveguides, and provides the illustration of the S-parameters and impedance describing the characteristics of the tunneling.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.56-62
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• 2013

We present a rectifier for wireless power transmission using multiplier configuration in layout for MOSFETs which works at 13.56 MHz, designed to fit in CMOS process where conventionally used diodes are replaced with the cross-coupled MOSFETs. Full bridge rectifier structure without comparators is employed to reduce current consumption and to be working up to higher frequency. Multiplier configuration designed in layout reduces time delay originated from parasitic series resistance and shunt capacitance at each finger due to long connecting layout, leading to fast transition from on-state to off-state cross-coupled circuit structure and vice versa. The power conversion efficiency is significantly increased due to this fast transition time. The rectifier is fabricated in $0.11{\mu}m$ CMOS process, RF to DC power conversion efficiency is measured as 86.4% at the peak, and this good efficiency is maintained up to 600 MHz, which is, to our best knowledge, the highest frequency based on cross-coupled configuration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.537-537
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• 2013

Cyclotron-accelerated ion beams are used for various researches, such as nuclear physics, nuclear chemistry, biotechnology, and material sciences including radio-isotope production. Recently considerable applications are asked to the cyclotron development undertaken to meet user requirements of various ions'energies, intensities, and their pulsed beams. For instance, a cocktail beam acceleration technique rapidly changing the ion species and energies was developed to irradiating integrated circuit chips. Also a chopping system in a cyclotron injection line is considered for producing a pulsed ion beam with a relatively long period compared with that generated by the resonance frequency. For the research in neutron time-of-flight measurement, a single-pulsed beam with a repetition interval of the order of mili-seconds or longer is necessary to have a good resolution and to remove background events. In this paper a feasibility of pulsed beam with an external ion source is simulated by adopting a combination system of a chopper accompanying with a bunching stage in the injection line and an additional chopper after the exit of the cyclotron in order to produce beam pulses with a range of $1{\mu}s{\sim}1ms$ periods from a resonance RF cycle. The pulseperiod will be adjusted by chopping the number of beam bunches from the injected pulses in the injection line. However, the longer pulses will have reduced number of beam pulses and sacrificed beam currents. Because the beam users need an intense single pulsed beam, a careful tuning of the acceleration phase and a high-intense external ion source are necessary to achieve an intense single-pulsed beam from the cyclotron. It is essential to strictly match the acceleration phase of injected beams in the central region of the cyclotron to improve its efficiency. An effect of space charge at each pulse from the ion source will be also considered.

• Journal of Advanced Navigation Technology
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• v.21 no.1
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• pp.66-71
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• 2017

This paper describes implementation of a 165 MHz, 5 kW RF high power amplifier (HPA) for particle accelerator applications. The HPA consists of a drive amplifier for main amplifiers driving, sixteen 600 W class-AB push-pull power amplifier pallets and Wilkinson power divider/combiner using lumped LC components, which are divided/combined power amplifier pallet outputs. To detected the amplifier circuit of normal and reflected output power conditions, we used a bidirectional coupler. To radiate heat of main power amplifier, we were used an water-cooled copper plates to go through a water for radiation of heat. The HPA of center frequency 165 MHz has archived an efficiency of 62.5 % at 5 kW of power level experimentally.