• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.7
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• pp.18-27
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• 1997

A CMOS 950 MHz frequency synthesizer is designed and fabricated in a 0.8.mu.m standard CMOS process for IS-95-A CDMA mobile communication transceivers To utilize a CMOS ring VCO in a CDMA wireless communication receisver, we employed a QDC (quasi-direct conversion) receiver architecture for CDMA applications. Realized RF frequency synthesizer used as the RF local oscillator for a QDC receiver exhibits a phase noise of -92 dBc/Hz at 885kHz offset from the 950.4 MHz carrier, which complies with IS-95-A CDMA specification. It has a rms jitter of 23.7 ps, and draws 30mA from a 5V supply. Measured I/Q phase error of the 950.4 output signals is 0.7 degree.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.174-178
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• 2004

본 논문에서는 P-type (100)Si 기판위에 RF magnetron sputtering법으로 완충층용 MgO 박막을 $500\AA$ 증착한 후 제작된 MgO/Si 기판위에 BST 박막을 증착하였다. 증착 시 기판온도는 $400^{\circ}C$ 작업가스 $AR:O_2:=80:20$, 작업진공 10mtorr에서 RF 파워를 25W, 50W, 75W로 변화하면서 증착하여 최적의 RF 파워조건을 확립하였다. XRD 측정결과 25W에서 증착된 BST 박막은 배향성이 보이지 않는 비정질 형태로 성장되었고 50W에서 증착된 박막의 결정특성이 가장 양호하였다. I-V측정결과 모든 샘플에서 $\pm150KV/cm$에서 $10^{-7}A/\textrm{cm}^2$이하의 양호한 누설전류특성을 나타내었고 C-V측정 결과 역시 50W에서 증착된 BST 박막의 비유전율이 약 305로서 가장 우수한 특성을 보여주었다.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.15-20
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• 2000

We demonstrated a single balanced mixer of the combination of high-T. superconductor (HTS) and III-V GaAs beam lead Schottky diodes operating in the mini-cryogenic chamber. The HTS hybrid mixer was designed with a center frequency of 27.5 GHz and a bandwidth of 1 GHz, and consisted of a rat-race coupler circuit with beam-lead diodes attached to its balanced ports. The HTS hybrid mixer with 1 GHz RF bandwidths exhibits a conversion loss of 6 dB. A LO-to-RF isolation was greater than 40 dB in the range of operating frequencies. Since the HTS/III-V hybrid mixer devices have lower noise and conversion loss, this technique provide us with new capabilities that can be effectively utilized in the field of local-point distribution service (LMDS) systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.