• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.86-89
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• 2002

A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.355-357
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• 1995

Pt(80nm)/$SiO_2$(150nm)/Si 기판위에 $Ba_{0.7}Sr_{0.3}TiO_3$ 박막을 rf-magnetron Sputtering 방법을 이용하여 기판온도 590$^{\circ}C$에서 33nm 두께를 증착했을 때 비유전율은 268 이었다. 비유전율이 3.9인 $SiO_2$와 비교했을 때 유효 두께인 Tox는 0.45nm 이었다. 누설 전류 밀도는 1.5V 전압을 인가했을 때 $4.21\times10^{-7}A/cm^2$이었다.

• Proceedings of the KAIS Fall Conference
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• 2010.05a
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• pp.360-362
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• 2010

본 논문에서는 SoC 키트에 해당하는 iRoV-Lab 3000의 장착된 로봇 모듈인 FPA 모듈, Stepper Motor 모듈, 적외선 송수신 센서 모듈, 카메라 모듈, RF 모듈 LED, TEXT LCD, 7-segment를 제어하기 위한 FPGA를 사용하며, FPGA설계를 위해 Schematic Design 또는 HDL에 대해 연구한다. FPGA의 내부구조를 이해하고 개발환경을 구축할 수 있다. 로봇의 구성요소와 각각의 구성요소(Sensor 모듈, display 모듈, Stepper Motor 모듈, RF 모듈)의 동작 원리를 개발한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• The Korean Journal of Pain
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• v.14 no.2
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• pp.193-198
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• 2001

Background: Anterior atlantoaxial subluxation (AAS) is a frequent phenomenon in rheumatoid arthritis (RA). AAS compresses the C2 ganglion or nerve and is a cause of posterior neck pain or occipital headache. Methods: We selected RA patients that had developed posterior neck pain or occipital headache caused by AAS. AAS was diagnosed by an increase of ADI (atlantodental interval). A distance of 3 mm or more was considered significant. Patients with vertical subluxation or symptoms suggestive of myelopathy were excluded. Before C2 RF ganglionotomy, we proceeded with a C2 ganglion block or greater occipital nerve block used by local anesthetics. For C2 RF ganglionotomy, the patient was placed in the supine position on a fluoroscopic table. A 100 mm, 4 mm active tip electrode was chosen. Following sensory stimulation at 0.2 to 0.6 V, the lesion was performed at a temperature of $60^{\circ}C$ to $65^{\circ}C$ for 60 sec. We followed up the patient after 6 months later. Results: All cases were female and the average duration of RA was 8.5 years. The duration of posterior neck pain or occipital headache was 1-8 months. The average ADI was 4.2 mm and the McGregor index was 3.3 mm on the average. In all cases, the score on the 4 point Likert scale was 4 (pain free) during the follow-up period. Conclusions: We found that the occipital headache or posterior neck pain caused by AAS in rheumatoid arthritis patients was alleviated over a short term follow up. C2 RF ganglionotomy is suggested as an effective palliative treatment for AAS in RA patients.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1322_1323
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• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.117-118
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• 2008

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1248-1249
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.