• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.335-339
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• 2003

This Paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard 0.25$\mu\textrm{m}$ CMOS technology and is shown to deliver 100mW output Power to load with 41％ power added efficiency(PAE) from a 2.5V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.174-180
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• 2008

The pulsed amplifier which switches the main supply voltage of RF amplifier according to input pulse signal has good efficiency and low noise level between pulses. And it has simple structure because it doesn't need a pulse modulator at input port. The pulsed amplifier using the conventional switching circuit has slow fall time compared to rise time. We proposed the novel switching circuit for improving the fall time of pulsed amplifier The proposed switching circuit is implemented by replacing FET of conventional circuit with BJT. As a result of appling this circuit to RF pulsed amplifier, the rise and fall time are 5.7 ns and 21.9 ns at 27 dBm output power, respectively.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.175-175
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• 2001

목적： 현재 3.0T MRI system은 세계적으로 개발이 진행되고 있는 가운데, 3.0T에서 사용할 수 있는 RF coil의 개발이 시급한 상황이다. 1.0T 및 1.5T MRI 와는 달리 3.0T에서 사용할수 있는 Body coil 및 그에 따른 High power RF amplifier 제작에 많은 제약이 있다. 작은 용량의 RF amplifier를 이용하여 신체의 부분을 촬영 하고자 한다면, Tx/Rx 가능한 coil을 이용하면 가능할 것이다. 이러한 이유로 본 연구에서는 Tx/Rx 가능한 Quadrature type T/L-spine RF coil을 설계, 제작하여 3.0T 고자장 자기공명 영상장치에서의 임상진단 활용범위를 확대하였다. 3.0 Tesla 자기공명 영상장치에 사용을 위한 Quadrature type의 L-spine TX/RX RF 코일을 개발하여 고자장 자기공명 영상장치에서의 임상진단 활용범위의 확대를 목적으로 한다.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.145-145
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• 2001

목적 현재 3.0T MRI system은 세계적으로 개발이 진행되고 있는 가운데, 3.0T에서 사용 할 수 있는 RF coil의 개발이 시급한 상황이다. 1.0T 및 1.5T MRI 와는 달리 3.0T에서 사용할 수 있는 Body coil 및 그에 따른 High power RF amplifier 제작에 많은 제약이 있다. 작은 용량의 RF amplifier를 이용하여 신체의 부분을 촬영 하고자 한다면, Tx/Rx 가능한 coil을 이용하면 가능할 것이다. 이러한 이유로 본 연구에서는 Tx/Rx 가능한 Quadrature type Th-spine RF coil을 설계, 제작하여 3.0T 고자장 자기공명 영상장치에서의 임상진단 활용범위를 확대하였다. 3.0 Tesla 자기공명 영상장치에 사용을 위한 Quadrature type의 L-spine TX/RX RF 코일을 개발하여 고자장 자기공명 영상장치에서의 임상진단 활용범위의 확대를 목적으로 한다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.222-226
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• 2001

In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.175-184
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• 2006

In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1205-1214
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• 2013

Recently spaceborne SAR systems are increasing image resolution and frequency. As a high quality image resolution, the wider bandwidth is required and a wideband signal generator with RF component is very complicated and RF impairments of device is increased. Therefore, it is very important to improve performance by reducing these errors. In this study, the transmission signal of the wideband signal generator is applied to the phase noise, IQ imbalance, ripple gain, nonlinear model of high power amplifier. And we define possible structures of wideband signal generator and measure the PSLR and ISLR for the performance assesment. Also, we extract error of the amplitude and phase from the waveform and use a quadratic polynomial curve fitting and examine the performance change due to nonlinear device. Finally, we apply a high power amplifier predistortion method for non-linear error compensation. And we confirm that distortion in the output of the amplifier by intermodulation component is decreased by 15 dB.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.225-228
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• 2004

This paper has been studied about UWB(Ulra wide-band)'s LNA(Low Noise Amplifier) and Mixer. The UWB is a new technology that is being pursed for both commercial and military purposes. Direct conversion architectures that convert RF signals have potential to achieve such terminals, because they eliminate the need for non-programmable image-rejection filters and IF channel filters. And this architecture promises better performance in power, size, and cost than existing heterodyne - based receivers. This Receiver architectures combines low-noise amplifier, mixer. And then this paper has designed suitable UWB's LNA and Mixer.