• Title/Summary/Keyword: RF Amplifier

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Performance of DS-CDMA forward Link Due to Nonlinear Power Amplifier in Multiuser Environment (다중사용자 환경에서 비선형 전력증폭기로 인한 DS/CDMA의 순방향 성능 분석)

  • 최성호;목진담;손동철;김성철;정희창;조경록
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.4
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    • pp.479-486
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    • 1999
  • In this paper the system performance degradation resulting from nonlinear transmitter power amplifier which is essential to increase the efficiency is analyzed in a forward link CDMA system. The power amplifier is modeled by power series model which includes only odd-order terms. The effects of power amplifier's nonlinearity such as intersymbol interference, phase distortion on the RF system performance were visualized by examining the distorted time domain waveforms, signal vector constellation. And through the investigation of the power spectrum density of the transmitted signal, spectral regrowth or sideband regrowth which is result from amplitude distortion can be seen. All these characteristics result in BER performance degradation due to other user interferences and intersymbol interference. The analysis technique described here applies not only to power amplifier but also to any other nonlinear components such as mixers and switches. Also the effects of adjacent channel interference and supurious emission can be analysed between different systems.

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Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT (GaN HEMT를 이용한 고효율 스위칭 모드 도허티 전력증폭기 설계)

  • Choi, Gil-Wong;Kim, Hyoung-Jong;Choi, Jin-Joo;Kim, Seon-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.9 no.5
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    • pp.72-79
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    • 2010
  • In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

Design of Dual-band Power Amplifier using CRLH of Metamaterials (메타구조의 CRLH를 이용한 이중대역 전력증폭기 설계)

  • Ko, Seung-Ki;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.12
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    • pp.78-83
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    • 2010
  • In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

Development of SSPA-based X-band Transmitter with Graceful Degradation (점진적 성능저하 기능을 가지는 X-대역 SSPA 송신장치 개발)

  • Song, Hyeong-Min;Kim, Ji-Deok;Kang, Hyun-Chul;Song, Jae-Gyeong;Park, Chul-Soon;Rhee, Kye-Jin;Lee, Choung-Hyun;Kim, Dong-Gil
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.5
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    • pp.853-862
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    • 2019
  • In this paper, we designed a 4.5kW X-band SSPA transmitter to replace the TWTA search radar transmitter with low MTBF and high maintenance cost. The transmitter is designed for the performance of over 520W average transmission output and 4.0kW maximum transmission output. In particular, by implementing a graceful degradation, it is designed to maintain better performance than conventional TWTA transmitter up to 40% (13 assembly modules) failure level of 200W power amplifier assembly. Through an experiment on the effective range of X-band, the performance of proposed transmitter verified the values of the maximum transmission output 6.1kW, spurious output 69.16dBc, RF pulse rising time 15.2ns and RF pulse falling time 16.3ns. The experiment confirmed the change of output power according to the graceful degradation due to fault injection.

Design of RF Energy Detector for Spectrum Sensing in TV White Space Transceiver (TV White Space 송수신기의 스펙트럼 센싱을 위한 RF 에너지 검출 회로 설계)

  • Kim, Jong-Sik;Shin, Hyun-Chol
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.11 no.2
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    • pp.83-91
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    • 2012
  • An RF energy detector for spectrum sensing in TV white space transceiver is presented. It is based on an RF active filtering technique that comprises a low-noise amplifier with a frequency-translation high-pass filtering feedfoward loop, which attenuates the unwanted sideband energy and only passes the wanted band energy. Unlike the conventional architecture, a new architecture that can attenuate both sidebands at the same time is proposed. A simplified system modeling method is presented to assess the non-ideality effects on the RF energy detector performances. System behavioral simulations demonstrate that the proposed architecture can be instrumental for realizaing a RF energy detector circuit in CMOS.

Reconfigurable Wireless Power Transfer System for Multiple Receivers

  • Hwang, Sun-Han;Kang, Chung G.;Lee, Seung-Min;Lee, Moon-Que
    • Journal of electromagnetic engineering and science
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    • v.16 no.4
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    • pp.199-205
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    • 2016
  • We present a novel schematic using a 3-dB coupler to transmit radiofrequency (RF) power to two receivers selectively. Whereas previous multiple receiver supporting schemes used hardware-switched methods, our scheme uses a soft power-allocating method, which has the advantage of variable power allocation in real time to each receiver. Using our scheme, we can split the charging area and focus the RF power on the targeted areas. We present our soft power-allocating method in three main points. First, we propose a new power distribution hardware structure using a FPGA (field-programmable gate array) and a 3-dB coupler. It can reconfigure the transmitting power to two receivers selectively using accurate FPGA-controlled signals with the aid of software. Second, we propose a power control method in our platform. We can variably control the total power of transmitter using the DC bias of the drain input of the amplifier. Third, we provide the possibility of expansion in multiple systems by extending these two wireless power transfer systems. We believe that this method is a new approach to controlling power amplifier output softly to support multiple receivers.

A High Linear And Low Noise COMOS RF Front-End For 2.4GHz ZigBee Applications (지그비(ZigBee) 응용을 위한 고선형, 저잡음 2.4GHz CMOS RF 프론트-엔드(Front-End))

  • Lee, Seung-Min;Jung, Chun-Sik;Kim, Young-Jin;Baek, Dong-Hyun
    • Journal of Advanced Navigation Technology
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    • v.12 no.6
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    • pp.604-610
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    • 2008
  • A 2.4 GHz CMOS RF front-end using for ZigBee application is described The front-end consists of a low noise amplifier and a down-mixer and uses a 2 MHz IF frequency. A common source with resistive feedback and an inductive degeneration are adopted for a low noise amplifier, and a 20 dB gain control step is digitally controlled. A passive mixer for low current consumption is employed. The RF front-end is implemented in 0.18 ${\mu}m$IP6M CMOS process. The measured performance is 4.44 dB NF and -6.5 dBm IIP3 while consuming 3.28 mA current from a 1.8 V supply.

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Design of Image Rejection SSB Modulator for X-Band Monopulse RADAR using Waveguide Hybrid Coupler (도파관 하이브리드 커플러를 이용한 X-대역 모노펄스 레이더용 이미지 제거 SSB 변조기 설계)

  • Koh, Young-Mok;Ra, Keuk-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.6
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    • pp.34-40
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    • 2011
  • From the present paper researched about the Design of Image Rejection SSB Modulator for X-Band Monopulse RADAR using Waveguide Hybrid Coupler. Generally, SSB modulator mixes IF(RF) and LO signals, and then it converts to RF(IF) frequency band. In this case, in order to transmit one sideband from RF band, SSB modulator is demanded the removal of image and LO signal. The balanced mixer was designed using waveguide hybrid coupler and crystal mixer diode to mix LO and IF signal. And also the IF Amplifier was designed for IF(+) and IF(-) signal generation which have $90^{\circ}$ phase differences which are suitable in two crystal mixer diode inputs. In order to maintain a high electric reliability from high frequency band the waveguide and IF amplifier's case were manufactured with aluminum using deep brazing techniques. The test result of SSB modulator, LO and sideband signal rejection ratio were 14.2dB and 18.5dB respectively.

Design and Implementation of Frequency Down Converter for Satellite Communication (위성 통신용 주파수 하향 변환기의 설계 및 제작)

  • Lee, Seung-Dae;Na, Sang-Yeob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.2
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    • pp.801-807
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    • 2012
  • In this paper, design and implementation of frequency down converter based on LC filter technic. Single frequency down converter, designed a low-noise amplifier, mixer, IF amplifier, LC filter was configured. And it is composed of DC block capacitors and RF bypass capacitor. LC filter, replace it with the IC reduced the power and realized low cost. The gain of single down converter is about 10dBm and realized by 18MHz bandwidth at 70MHz band.

Design of 2.5V Si CMOS LNA for PCS (PCS용 2.5V Si CMOS 저잡음 증폭기 설계)

  • 김진석;원태영
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.129-132
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    • 2000
  • In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

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