• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.174-178
• /
• 2004

본 논문에서는 P-type (100)Si 기판위에 RF magnetron sputtering법으로 완충층용 MgO 박막을 $500\AA$ 증착한 후 제작된 MgO/Si 기판위에 BST 박막을 증착하였다. 증착 시 기판온도는 $400^{\circ}C$ 작업가스 $AR:O_2:=80:20$, 작업진공 10mtorr에서 RF 파워를 25W, 50W, 75W로 변화하면서 증착하여 최적의 RF 파워조건을 확립하였다. XRD 측정결과 25W에서 증착된 BST 박막은 배향성이 보이지 않는 비정질 형태로 성장되었고 50W에서 증착된 박막의 결정특성이 가장 양호하였다. I-V측정결과 모든 샘플에서 $\pm150KV/cm$에서 $10^{-7}A/\textrm{cm}^2$이하의 양호한 누설전류특성을 나타내었고 C-V측정 결과 역시 50W에서 증착된 BST 박막의 비유전율이 약 305로서 가장 우수한 특성을 보여주었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.191-191
• /
• 2010

차세대 디스플레이를 위한 소자로 활용 가능한 Oxide Semiconductor TFT를 bottom gate 타입의 TFT 소자를 제작하였다. 투명 박막 트랜지스터 제작과 관련해서 ITO가 증착된 glass 기판을 gate 전극으로 사용하였고, 게이트 dielectric으로 $SiO_2/Si_3N_4$를 PECVD 방법을 사용해 증착하였으며, 채널 영역으로 ZnO를 RF magnetron sputtering을 이용하여 RF power 및 공정 압력에 따른 구조적, 광학적, 전기적 특성을 조사하였다. ZnO 박막의 공정 변수로 RF파워는 25W, 50W, 75W, 100W로 변화시키고, 증착 압력은 20m, 100m, 200m 300mTorr로 변화시켰다. Source/Drain 사이에 채널 형성 및 게이트 dielectric에서 누설전류가 TFT 특성에 미치는 영향을 연구하였다. ZnO 박막은 증착 파워 및 공정 압력에 따라 박막의 결정성이 현저하게 변화하는 것을 알 수 있었으며, 그러한 박막의 미세구조 가 TFT의 전기적인 특성에 크게 영향을 미치는 것으로 판단된다

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.1 s.116
• /
• pp.37-43
• /
• 2007

In this.paper, we introduce design and implementation results of the single balanced diode mixer for European point-to-point microwave radio in order to improve flatness performance. When a resonator such as RF filter is integrated with a mixer, impedance characteristic of 50 ohm is maintained only in RF band, not in LO band resulting deterioration of flatness performance because of LO power variation on the diode. In the paper, we suggest a design method of mixer integrated with image rejection filter and LO harmonic filter to have a better performance of flatness using embedding electrical length between filter and mixer's port. Frequency specification of fabricated mixer is $21.2{\sim}22.6\;GHz$ for RF, $19.32{\sim}20.72\;GHz$ for LO and 1.88 GHz+/-50 MHz for IF, respectively. Measured results show conversion loss of 8.5 dB, flatness of 2 dB, input PldB of 8 dBm, IIP3 of 15 dBm under LO power level of 10 dBm. Return losses of RF, LO and IF port are under -12 dB, -10 dB and -5 dB, respectively. Isolations of LO/RF and LO/IF are 20 dB and 50 dB, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.10
• /
• pp.2194-2200
• /
• 2010

In this paper, the power detectors using metamaterials were designed and fabricated for multi-band six-port direct conversion method. The RF short-stubs for power detector were designed by using metamaterials which provide multi-band characteristics. The power detectors with metamaterial RF short-stub were analyzed and fabricated by using lumped and distributed element. The measured results of metamaterial power detectors show the good agreement with the simulation results. The performance of lumped-metamaterial RF short-stub shows the insertion loss below 1 dB and the good frequency response characteristics. Also, the distributed-metamaterial RF short-stub shows the good frequency response characteristics and the insertion loss under that of lumped-metamaterial RF short-stub. The multi-band power detectors with metamaterial RF short-stub detect the input RF signal in the designed dual frequency bands very well.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.39A no.2
• /
• pp.100-108
• /
• 2014

In this paper, we design SSD(simultaneous single band duplex) system using RF(radio frequency) cancellation and digital cancellation. we analyze characteristic of residual self-interference after RF Cancellation signal when error of phase shifter occur in RF cancellation. When phase shifter error of $0^{\circ}$, $0.5^{\circ}$, $1^{\circ}$ and $2^{\circ}$ occur in RF cancellation, residual self-interference signal power after RF cancellation is bigger than desired signal power of distant station. So, it is impossible to receive transmit data of distant station. but we confirm that it is possible to receive transmit data of distant station by digital cancellation with frame structure. Also, in digital cancellation with frame structure, if residual self-interference signal after RF cancellation is too large then LMS algorithm requires more time to estimate self-interference channel. That is, performance degradation occurs because self-interference channel estimation has not completed in estimation frame.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.7
• /
• pp.791-796
• /
• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.6
• /
• pp.80-85
• /
• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.6
• /
• pp.573-578
• /
• 2004

EED consists of bridgewire, explosive charge, lead pins and metal case. If a firing signal is injected to EED， the explosive charge in EED is initiated by heating of bridgewire. Electromagnetic waves radiated from high power transmitters or radars can also cause unexpected firing of EED. Therefore, EMC design and test requirements for EED in military specifications are established and applied. This report describes the characteristics of RF sensitivity fur a firing fuse which is used fur EMC test instead of a real EED installed in aircraft. RF firing level of the fuse was predicted using transmission line(TL) theory. n sensitivity and RF sensitivity specified in military specifications were measured.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.10
• /
• pp.17-23
• /
• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. The materials (96% Al2O3) and shape (I-type) of the core were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. The copper (Cu) wire with 40${\mu}{\textrm}{m}$ diameter was used as the coils. High frequency characteristics of the inductance (L), quality-factor (Q), and capacitance (C) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 11 to 39 nH and quality factors of 28 to 50 over the frequency ranges of 250MHz to 1 GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the L, Q, and C of the inductors developed well.l.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.314-324
• /
• 2006

The vacuum characteristics of the KSTAR ICRF antenna were experimentally investigated. The fabricated antenna was installed in the RF Test Chamber(RFTC) which has a vacuum system with an effective pumping speed of 1015 l/s. The time variations of RFTC pressure, total gas load and ultimate pressure were measured before the RF test. RF conditioning effect was studied by repeating RF pulses at low power level. A time variation of the RFTC pressure was measured during a RF power was applied to the antenna. Threshold pressure at which a RF breakdown occurs was investigated. Whenever the pressure was higher than $10^{-4}$ mbar, the RF breakdown occurred. During a long pulse testing, the temperature of the antenna and RFTC pressure were measured to investigate long pulse limitation of the maximum available voltage without any cooling, which were compared with testing results with a water cooling of the antenna.