• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.46-53
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• 2014

In this paper, ku-band RF transceiver system is designed for the unmanned aerial vehicle(UAV) line-of-sight(LOS) datalink. The RF transceiver system is consisted of the transmitting and receiving unit, RF front-end unit, and high power amplification unit. The transmitting and receiving unit has the functions of frequency up/down converting and channel changing. The RF front-end unit has the functions of transmitting and receiving signal duplexing, antenna selection, small signal amplification, and frequency filtering excluding the receiving signal. The high power amplification unit has the functions of ku-band power amplification and transmitting power variation(High/Middle/Low/Mute). The frequency up/down converting of transmitting and receiving unit is designed by using the superheterodyne method. The RF transceiver system is designed to obtain the broadband and high linearity properties for the reliable transmission and reception of high data-rate and high speed data. Also, the channel changing function is designed to use selectively the frequency as the operation environment of UAV.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Journal of the Korean Society of Food Culture
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• v.20 no.4
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• pp.433-437
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• 2005

The characteristic properties of rice breads produced from several conditions were investigated. The rice bread made in control condition (wheat flour), RF 3 (rice and wheat flour mixing) condition and RF 1 (rice, gluten and modified starch mixing) showed relatively higher volumethan others. The crust and crumb color were measured by Humter colory meter. The rice breads making on RF 5 and RF 6 condition showed higher crust L-value and the crumb L-value of the bread from RF 1 condition was higher than that from other condition. On the texture measuring by texture analyzer, hardness of the bread made from RF 1 and RF 2 conditions and cohesiveness of that from RF 3 condition were lower than control. However the significant higher level of the springiness and chewiness were showed in the bread from RF 1, RF 2 and RF 3 condition. The bread containing 85% of rice, 5% of rice, 5% of gluten and 10% of modified starch which was made in RF 1 condition obtained significant high overall acceptance score by sensory evaluation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.1-191.1
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• 2013

현재 산업계 전반적으로 사용되고 있는 박막형 태양전지 투명 전도막의 재료로는 ITO 와 Al, In, Ga, B, Si, F 등으로 도핑된 ZnO 박막이 사용되고 있으며, 그 중에서도 Al 이 도핑된 ZnO 박막은 넓은 밴드갭을 가진 n-type 반도체로서, 적외선 및 가시광 영역에서의 높은 투과성과 우수한 전도성을 가지며, 고온에서 안정된 전기적 특성, 낮은 원가 등의 장점을 지녀 그 응용 연구가 활발히 이루어지고 있다 [1]. 본 연구에서는 RF magnetron Sputter 법을 이용하여 Flexible 기판 위에 AZO 박막을 증착하였다. 실험변수로는 RF power, Pressure등을 이용하였고, 최적조건에서의 박막의 투과도는 90%이상, 면저항은 30 ${\Omega}/{\square}$ 이하를 나타내었다. 그리고 (주)인포비온에서 원천기술을 갖고있는 EBA technology를 이용하여 후처리 하여 전기적, 광학적, 구조적인 특성의 변화를 관찰하였다. AZO 박막의 두께를 측정하기 위해 ${\alpha}-step$과 SEM을 이용하였고, 투과도는 UV-Vis spectrometer를 사용하여 박막의 투과도 변화를 관찰 하였다. 전기적인 특성은 4-Point probe를 이용하여 측정하였다. 또한, 박막의 결정성과 거칠기의 변화는 XRD(X-ray Diffraction)와 원자간력현미경(Atomic Force Microscope; AFM) 을 이용하여 측정하였으며, 전기 광학적 특성 변화는 Figure Of Merit(FOM) 수치로 분석하였다. 본 연구에서 AZO 박막의 특성은 EBA 조사 후 특성의 향상이 이루어지는 것을 관찰할 수 있었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.270-275
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• 2012

This paper describes design of a variable-N frequency synthesizer for RF PLL with $0.13{\mu}m$ silicon CMOS technology being used as an application of the UWB system like MBOA. To get good performance of speed and noise super dynamic circuits was used, and to get variable-N division ratio MOSFET switching circuits was used. Especially to solve narrow bandwidth problem of the dynamic circuits load resistance value of unit divider block was varied. Simulation results of the designed circuit shows very fast and wide operation characteristics as 5~26GHz frequency range.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.184.1-184.1
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• 2015

RF magnetron sputtering법을 이용하여 IGZO박막을 RF power 100W로 일정하게 유지시켜, 열처리 변화에 따른 구조적, 전기적, 광학적 특성 분석을 연구하였다. IGZO 타겟은 $In_2$ $O_3$, $Ga_2$ $O_3$, ZnO 분말을 각각 1:1:2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였고, $20mm{\times}20mm$ XG glass 기판위에 IGZO박막을 증착하였다. sputtering의 조건은 base pressure $2.0{\times}$10^-6Torr, working pressure $2.0{\times}$10^-2Torr, RF power 100 W, 증착온도는 실온으로 고정, 증착된 박막은 Annealing장비로 $500^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$로 열처리를 하였다. XRD 분석 결과 열처리 $700^{\circ}C$부터 2theta=31.4도에서 peak intensity가 증가하며 결정화가 진행되는 것을 확인하였다. AFM분석 결과 열처리 $700^{\circ}C$에서 최소 0.31 Roughness를 갖는 것을 확인하였고, Hall 측정 결과 열처리 $700^{\circ}C$에서 carrier concentration $4.91{\times}$10^19cm^-3, Mobility 14.4cm^2/V-s, Resistivity $8.7{\times}$10^-5${\Omega}-cm$로 확인하였으며, UV-Visible-NIR을 이용하여 열처리 한 모든 IGZO박막은 가시광선 영역에서 평균 85%이상의 광 투과성을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.56-61
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• 2011

This paper describes design of a programmable frequency synthesizer for RF PLL with $0.18{\mu}m$ silicon CMOS technology being used as an application of the UWB system like MBOA. To get good performance of speed and noise super dynamic circuits was used, and to get programmable division ratio switching circuits was used. Especially to solve narrow bandwidth problem of the dynamic circuits load resistance value of unit divider block was varied. Simulation results of the designed circuit shows very fast and wide operation characteristics as 1~14GHz frequency range.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.4B
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• pp.400-405
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• 2001

본 논문에서는 Local Oscillator(LO)의 누설신호 제거를 위해 혼합기의 특성을 이용하여 광대역의 특성을 가지고 RF 채널에 근접한 누설신호를 제거할수 있는 구조를 제안하였다. 제안된 구조는 Half-LO 주파수를 이용하는 방버븡로 LO 누설신호를 일반적인 다른 경우보다 RF 신호대역에서 멀리 떨어진 대역으로 분리시킴으로서 대역 통과여파기로서 쉽게 제거하였다. 상향변환기로서 필요한 저역통과여파기, 대역통과여파기, 그리고 증폭기를 설계하였고 혼합기에 의한 영상성분은 혼합기의 위상을 특성을 이용하여 제거하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1038-1043
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• 2003

A capacitive-coupled configuration MEMS switch is designed and fabricated, and its characteristics are measured. Low actuation voltage has been achieved by means of small distance between signal line and membrane. Minimum actuation voltage is about 11V. Isolation is around 40dB and insertion loss is about 0.2dB at 2GHz.

• Electronics and Telecommunications Trends
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• v.16 no.1 s.67
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• pp.56-70
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• 2001

마이크로파대 이상의 높은 RF 전파는 신호레벨이 비교적 작고 간섭현상에 매우 민감한 특성을 가지고 있다. 따라서 이러한 미소한 입력전파의 수신시 수신기 전체의 감도를 높이고 잡음을 저감시킬 목적으로 사용되는 고주파 증폭기가 저잡음 증폭기이다. 본 고에서는 LNA의 기본적 특성분석과 지능형교통시스템에 응용되는 5.8GHz대 단거리전용통신용 LNA를 구현하기 위한 기본 FET 증폭기의 전기적 특성을 연구하고 직렬 궤환에 의한 최소잡음과 최소 입력 정재파비의 최적 설계 파라미터를 도출하였다.