• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.66-78
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• 2013

In order to develop of 80 kW RF plasma torch system, we achieved three-dimensional simulations for the extraction of more information as temperature in torch and fluid behavior analysis, etc. The position of powder injection tube, the plasma discharge characteristics with various input current and various length of ceramic tube, and the plasma temperature characteristics with process gas flow rate such those was simulated. RF thermal plasma torch designed by simulation was manufactured that was measured to the maximum of 89.3 kW power. The mass production using developed 80 kW RF thermal plasma torch system were investigated by characteristics manufactured of Si nano powder. The mass-production level of Si nano-powder was average of 539 g/hr and high yield rate of 71.6%, respectively. The particle size distribution $D_{99}/D_{50}$ of manufacturing nano-powder was investigated to 1.98 as a good uniform.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.394-400
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• 2014

In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.53-57
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• 2001

본 논문에서는 WCDMA 규격[1,2]에 근거하여 WCDMA 기지국 무선부 설계 파라미터들로서, 수신기 잡음 지수(NF:Noise Figure), IIP3(Input 3$^{rd}$ order Intercept Point), ACS(Adjacent Channel Selectivity) 와 Blocking 특성을 만족하기 위한 여파기의 감쇠 특성 및 송신기 전체의 ACLR 특성을 만족하기 위한 송신기 구성 소자의 ACLR 특성 등을 고찰하였으며, 이와 같은 무선부 설계 파라미터를 기본으로 구현한 무선부의 시험 결과를 기술하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.185-185
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• 2003

TiN 박막을 Ti 타겟을 이용하여 Si(001) 기판위에 반응성 RF 마그네트론 스퍼터 방법으로 제조하였다. 반응성 스퍼터링시 온도를 $600^{\circ}C$로 고정하고 $N_2$/Ar비, 공정압력, RF파워를 변화시키면서 박막을 제조하였고 각각의 공정조건에 따른 TiN 박막의 결정성 변화를 XRD, SEM, TEM, HRTEM을 이용하여 조사하였다. 그 결과 TiN 박막은 $N_2$/Ar비가 작을 경우 공정압력이 커짐에 따라 (001) 배향에서 (111) 배향으로 바뀜을 확인하였다. 또한 $N_2$/Ar비가 클 경우는 공정압력이 증가함에 따라(001) 우선 배향성이 향상됨을 확인하였다. 이런 결정성 변화가 전기적 특성에 미치는 영향에 관하여 논의할 것이다.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.199-202
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• 1999

반강유전 물질인 Pb[(Zr. Sn)Ti]NbO₃를 La/sub 0.5/Sr/sub 0.5/CoO₃/Pt/Ti/SiO₂/Si 기판상에 RF 마그네트론 스퍼터링 방법으로 박막화하여 그 결정성과 전기적 특성을 조사하였다. 80 W의 RF power, 400℃의 기판온도, Ar:O₂= 9:0.5의 분위기에서 증착되고, 650 ℃에서 10초동안 RTP(Rapid Thermal Process) 방법으로 열처리된 박막이 가장 우수한 페로브스카이트 구조를 보였으며, 10 ㎑ 에서 유전상수(ε')는 721, 유전손실(tan δ)은 0.06을 나타내었다. 잔류분극(Pr)은 15.5 μC/㎠ 였으며, 항전계(Ec)는 51 ㎸/㎝로 비교적 낮은 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.96-96
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• 2009

투명전도막은 FPD의 전자부품에서 전극으로 널리 사용되고 있으며 현재 대부분의 투명전도막으로는 ITO가 사용되고 있다. 하지만, ITO에 사용되는 In은 희유금속으로 지속적인 사용량 증가로 가격의 급등과 더불어 수급 불안정으로 인해 In을 대체하고자 하는 연구가 집중적으로 이루어지고 있다. 그러나 $In_2O_3$를 대체한 ZnO계 등은 비저항이 높아 대체 적용이 가능하지 못하고 있다. 이에 In의 양을 줄이면서 상대적으로 저가이면서 광학적 특성이 우수한 ZnO을 첨가하여 기존의 ITO에 상응하는 전기전도도와 광투과율을 얻을 수 있는 새로운 3성분계 TCO 에 대한 연구가 활발히 이루어지고 있다. 따라서, 본 연구그룹은 $In_2O_3$을 기본 조성으로 하는 $In_2O_3-ZnO-SnO_2$계를 선정하여 IZTO target을 제조 후 RF magnetron sputtering 방법으로 투명전도막을 제작하였다. 본 연구에서는 RF 파워와 동작압력, 동작시간 그리고 열처리온도의 증착 조건에 따른 IZTO 박막의 특성을 평가하였다. 박막의 특성 및 표면 미세구조를 관찰하기 위해 AFM(Atomic Force Microscope)을 이용하였으며, XRD(X-ray diffraction)을 이용하여 결정성을 분석하였고, 4 point-prove, Hall effect measurement와 UV/Visible spectrometer를 통해 전기적, 광학적 특성을 평가하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.293-297
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• 2010

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.