• Transactions on Semiconductor Engineering
• /
• v.2 no.1
• /
• pp.9-16
• /
• 2024

This paper discusses the design of bio-implanted ultra-low-power MICS RF transceivers for wireless sensor networks. The 400 MHz MICS standard was considered for the implementation of the WBAN wireless sensor system, indirectly minimizing radio propagation losses in the human body and the inference with surrounding networks. This paper includes link budget, various transmission and reception architectures for a system design and ultra-low power transceiver circuit techniques for the implementation of RF transceivers that meet MICS standards.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.296-299
• /
• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Journal of electromagnetic engineering and science
• /
• v.16 no.4
• /
• pp.232-234
• /
• 2016

In this paper, the power transfer efficiencies (PTEs) of magnetic resonance (MR) wireless power transmission (WPT) and radio frequency (RF) WPT are compared as a function of the distances between resonators (or antennas). The PTE of the C-loaded loop resonators during MR WPT was theoretically calculated and simulated at 6.78MHz, showing good agreement. The PTE of the patch antennas, whose area is the same as the C-loaded loop resonator during MR WPT, was theoretically calculated using the Friis equation and the equation by N. Shinohara and simulated at 5.8 GHz. The three results from the Friis equation, the equation by N. Shinohara, and from a full wave simulation are in strong agreement. The PTEs, when using the same size resonators and antennas are compared by considering the distance between the receiver and transmitter. The compared results show that the MR WPT PTE is higher than that of the RF WPT PTE when the distance (r) between the resonators (or antennas) is shorter. However, the RF WPT PTE is much higher than that of the MR WPT PTE when the distance (r) between the resonators (or antennas) is longer since the RF WPT PTE is proportional to $r^{-2}$ while the MR WPT PTE is proportional to $r^{-6}$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.12
• /
• pp.586-591
• /
• 2003

We have developed the radio frequency excited slab waveguide $CO_2$ laser, The dimension of active area is $2{\times}40{\times}400$ mm to get a laser gain. Two pieces of concave mirror are used to make the unstable resonator of negative branch. The radio frequency is 123 MHz and RF input power is from 100 to 900 W. The laser gas is set to a pressure of 10 ∼ 60 torr and the mixing ration is $CO_2$:$N_2$:He=1:1:3. The laser output power of 50.9 W was obtained with laser power to RF power efficiency of 6.5 %.

• Korean Chemical Engineering Research
• /
• v.46 no.4
• /
• pp.676-680
• /
• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.307-307
• /
• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• Korean Journal of Optics and Photonics
• /
• v.14 no.4
• /
• pp.406-412
• /
• 2003

We have developed a radio frequency excited slab waveguide $CO_2$ laser. The dimension of active volume is 2${\times}$40${\times}$400 mm. One concave and one convex mirror are used to make the unstable resonator of the positive branch. The radio frequency is 123 MHz and RF input power is varied from 100 to 900 W. The laser gas is set to a pressure of 10∼60 torr and the mixing ratio is $CO_2$:$N_2$:He=1:1:3. The laser output power of 70.7 W was obtained which corresponds to laser power to RF power conversion efficiency of 9.2%.

• IEMEK Journal of Embedded Systems and Applications
• /
• v.4 no.1
• /
• pp.29-34
• /
• 2009

In this paper, we design RF transceiver architecture and building blocks for impulse radio UWB system. Impulse radio UWB signal occupies the wide frequency band which is very low transmission power. So, it can minimize the interference effect with the other system. Using UWB technology, we obtain position awareness service. Therefore, we describe the RF transceiver architecture of direct conversion receiver and define the requirement of RF transceiver. Moreover, we implement a prototype RF transceiver based on the presented standard and verify a function and performance through the wireless data communication and ranging test.

• Journal of Korean Ophthalmic Optics Society
• /
• v.3 no.1
• /
• pp.115-120
• /
• 1998

The $TiN_x$ thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.

• Journal of Korean Ophthalmic Optics Society
• /
• v.4 no.1
• /
• pp.21-25
• /
• 1999

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.