• Title/Summary/Keyword: RF/MM Wave

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Channel Modeling and RF Performance Verification in mmWave Bands Based on NS-3 (NS-3 기반의 mmWave 대역 채널 모델링 및 RF 성능 검증)

  • Seung-Min Lee;Jun-Seok Seo;Hong-Je Jang;Myung-Ryul Choi
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.650-656
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    • 2023
  • This paper implements a channel model for mmWave bands using an NS-3-based 5G system-level simulator and analyzes the reliability and validity of the implemented model through RF performance verification. The channel model for RF performance verification in the mmWave bands consider parameters such as characteristics defined in 3GPP TR 38.901, beam-forming, antenna configuration, scenarios, among others. Furthermore, the simulation results verify compliance within the ranges permitted by the 3GPP standards and verify reliability in indoor environmental scenarios by exploiting the Radio Environment Map (REM). Therefore, the channel model implemented in this study is applicable to the actual design and establishment of 5G networks, presenting a method to evaluate and validate RF performance by adjusting various parameters.

High Performance MMIC Star Mixer for Millimeter-wave Applications (밀리미터파 응용을 위한 우수한 성능의 MMIC Star 혼합기)

  • Ryu, Keun-Kwan;Yom, In-Bok;Kim, Sung-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.10A
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    • pp.847-851
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    • 2011
  • In this paper, we reported on a high performance MMIC star mixer for millimeter-wave applications. The star mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process on 2 mil thick GaAs substrate. The average conversion loss of 13 dB was measured in the RF frequency range of 81 GHz to 86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-LO isolation characteristics are greater than 30 dB and the input 1-dB compression are approximately 4 dBm. The total chip size is 0.8 mm ${\times}$ 0.8 mm.

Development of a 3.5 mm Coaxial Microcalorimeter for Microwave Power Standards (3.5 mm 동축형 미소열량계 개발과 전자파전력 측정표준 확립)

  • Kwon, Jae-Yong;Kim, Jeong-Hwan;Kang, Tae-Weon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.989-996
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    • 2009
  • RF and microwave power is a basic quantity in electromagnetic metrology which linked directly to major electro-magnetic quantities such as attenuation, RF voltage, antenna characteristics and field strength. This paper deals with a power meter and power sensor with associated theory for RF and microwave power measurement. We study the theory and the key aspects in design of a 3.5 mm coaxial microcalorimeter which works from 50 MHz to 26.5 GHz as a primary microwave power standard.

A Millimeter-Wave LC Cross-Coupled VCO for 60 GHz WP AN Application in a 0.13-μm Si RF CMOS Technology

  • Kim, Nam-Hyung;Lee, Seung-Yong;Rieh, Jae-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.295-301
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    • 2008
  • Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

A Study For Optimizing Input Waveforms In Radiofrequency Liver Tumor Ablation Using Finite Element Analysis (유한 요소 해석을 이용한 고주파 간 종양 절제술의 입력 파형 최적화를 위한 연구)

  • Lim, Do-Hyung;NamGung, Bum-Seok;Lee, Tae-Woo;Choi, Jin-Seung;Tack, Gye-Rae;Kim, Han-Sung
    • Journal of Biomedical Engineering Research
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    • v.28 no.2
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    • pp.235-243
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    • 2007
  • Hepatocellular carcinoma is significant worldwide public health problem with an estimated annually mortality of 1,000,000 people. Radiofrequency (RF) ablation is an interventional technique that in recent years has come to be used for treatment of the hepatocellualr carcinoma, by destructing tumor tissues in high temperatures. Numerous studies have been attempted to prove excellence of RF ablation and to improve its efficiency by various methods. However, the attempts are sometimes paradox to advantages of a minimum invasive characteristic and an operative simplicity in RF ablation. The aim of the current study is, therefore, to suggest an improved RF ablation technique by identifying an optimum RF pattern, which is one of important factors capable of controlling the extent of high temperature region in lossless of the advantages of RF ablation. Three-dimensional finite element (FE) model was developed and validated comparing with the results reported by literature. Four representative Rf patterns (sine, square, exponential, and simulated RF waves), which were corresponding to currents fed during simulated RF ablation, were investigated. Following parameters for each RF pattern were analyzed to identify which is the most optimum in eliminating effectively tumor tissues. 1) maximum temperature, 2) a degree of alteration of maximum temperature in a constant time range (30-40 second), 3) a domain of temperature over $47^{\circ}C$ isothermal temperature (IT), and 4) a domain inducing over 63% cell damage. Here, heat transfer characteristics within the tissues were determined by Bioheat Governing Equation. Developed FE model showed 90-95% accuracy approximately in prediction of maximum temperature and domain of interests achieved during RF ablation. Maximum temperatures for sine, square, exponential, and simulated RF waves were $69.0^{\circ}C,\;66.9^{\circ}C,\;65.4^{\circ}C,\;and\;51.8^{\circ}C$, respectively. While the maximum temperatures were decreased in the constant time range, average time intervals for sine, square, exponential, and simulated RE waves were $0.49{\pm}0.14,\;1.00{\pm}0.00,\;1.65{\pm}0.02,\;and\;1.66{\pm}0.02$ seconds, respectively. Average magnitudes of the decreased maximum temperatures in the time range were $0.45{\pm}0.15^{\circ}C$ for sine wave, $1.93{\pm}0.02^{\circ}C$ for square wave, $2.94{\pm}0.05^{\circ}C$ for exponential wave, and $1.53{\pm}0.06^{\circ}C$ for simulated RF wave. Volumes of temperature domain over $47^{\circ}C$ IT for sine, square, exponential, and simulated RF waves were 1480mm3, 1440mm3, 1380mm3, and 395mm3, respectively. Volumes inducing over 63% cell damage for sine, square, exponential, and simulated RF waves were 114mm3, 62mm3, 17mm3, and 0mm3, respectively. These results support that applying sine wave during RF ablation may be generally the most optimum in destructing effectively tumor tissues, compared with other RF patterns.

Trends of 5G Mobile Communication Radio Frequency Technology & Market based on mm-Wave (밀리미터파 기반 5세대 이동통신 RF 기술/시장동향)

  • Jang, J.D.;Kim, C.H.;Lee, H.D.;Jang, S.H.;Kang, B.S.;Park, B.H.;Kim, T.J.
    • Electronics and Telecommunications Trends
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    • v.31 no.5
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    • pp.41-50
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    • 2016
  • 최근 이동통신 시장이 활성화되면서 모바일 스마트 기기가 하루가 다르게 발전하여 출시됨에 따라 사용자가 급속히 늘어나게 되어 현재의 무선 네트워크에서 소비되는 모바일 데이터 트래픽이 기하급수적으로 증가하고 있다. 이러한 모바일 사용자 트래픽 증가에 따른 수요를 충족하기 위해서는 기존의 무선 인프라를 넘어서는 새로운 무선기술이 개발되어야 한다. 이를 위하여 우리나라를 비롯하여 전 세계적으로 넓은 대역폭 확보가 가능한 밀리미터파 기반의 5세대 이동통신 RF 기술 개발이 활발히 진행되고 있다. 이와 같이 밀리미터파(mm-Wave) 무선 통신 기술은 30~300GHz의 초고주파를 이용하여 1GHz 이상의 대역폭을 사용하고 밀리미터(mm) 단위의 짧은 파장을 제어하여 대량의 멀티미디어 정보를 전송할 수 있는 5세대 이동통신 핵심 요소 기술로 연구개발 되고 있다. 본고에서는 서론에 이어 밀리미터파 대역 RF 기술 개요, 국내외 기술동향, 국내외 시장동향에 대하여 살펴보고자 한다.

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A fully integrated downconverter MMIC for millimeter wave applications (밀리미터파 응용을 위한 완전집적 다운컨버터 MMIC)

  • Jeon, Jang-Hyeon;Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.37 no.1
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    • pp.99-104
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    • 2013
  • In this paper, we developed a fully integrated downconverter MMIC (monolithic microwave integrated circuit) including Lange coupler and output active balun for millimeter wave applications. Concretely, ${\lambda}$/4 transmission line was added to Lange coupler for size reduction of RF/LO input, and mixed RF/LO signals were applied to gate of the FET of mixer. Active balun was used at output port for a coupling of out-of-phase IF output signals. According to measured results, the proposed downconverter MMIC showed good RF performances. For example, the downconverter MMIC showed an LO leakage power of -25 dBc at IF output port, and a RF-LO isolation of 18 dB. Therefore, off-chip components such as LO rejection filters were not required for a normal operation of the proposed downconverter MMIC. The proposed downconverter MMIC showed a conversion gain of 10.3 dB at RF frequency of 63 GHz. The size of the downconverter MMIC including all active and passive components was $2.2{\times}1.4mm^2$.

Modification of CPW Pad Design for High fmax InGaAs/InAlAs Metamorphic High Electron Mobility Transistors (높은 $f_{max}$ 를 갖는 InGaAs/InAlAs MHEMT 의 Pad 설계)

  • Choi, Seok-Gyu;Lee, Bok-Hyung;Lee, Mun-Kyo;Kim, Sam-Dong;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.599-602
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    • 2005
  • In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

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Self Oscillating Double Conversion Mixer for low cost mm-wave system (밀리미터파 대역에서 저가격화 시스템을 위한 Self Oscillating Double Conversion Mixer)

  • Lee, Sang-Jin;Ahn, Dan;Lee, Mun-Kyo;Kwon, Hyuk-Ja;Baek, Tae-Jong;Jun, Byoung-Chul;Park, Hyun-Chang;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.491-492
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    • 2006
  • The MMIC (Microwave Monolithic Integrated Circuit) self oscillating double conversion mixer was designed and fabricated for the V-band transmitter applications. The MMIC self oscillating double conversion mixer which dose not need external local oscillator was designed using GaAs PHEMT technology. The first self oscillating mixer use PHEMT technology. The first self oscillating mixer use PHEMT for $f_{LO}$ signal generation and $f_{IF}$ signal is applied at gate port and $f_{RF1}$ signal is generated at a drain port of first stage. The second gate mixer use PHEMT for $f_{LO}$ signal and $f_{RF1}$ signal is applied at gate port and $f_{RF2}$ signal is output at a drain port of second stage.

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Single Balanced Monolithic Diode Mixer using Marchand Balun for Millimeter-wave Applications

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.16 no.2
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    • pp.127-130
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    • 2012
  • In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.