• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.207-208
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• 2012

GZO( Ga-doped ZnO) 및 ZTO (zinc tin Oxide) 박막을 DC, RF magnetron sputtering 공정을 이용하여 증착한 후, 대기 및 진공상태에서 200, $300^{\circ}C$ 조건으로 30분 동안 열처리하였다. ZTO/GZO 박막의 전기적 특성은 ZTO 층과 GZO 층의 두께 비에 의존함을 확인 할 수 있었다. 본 연구에서는 GZO단일 박막과 ZTO/GZO double layer 박막의 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 비교검토 하였다.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.40-41
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• 2001

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1254-1255
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 6" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify the optical properties of the AZO thin films, the transparency was tested with sputtering conditions using UV-visible spectroscopy. As a result, we got the transmittance properties over 80% and low resistivity in the sputtering conditions of DC 200[W], Ar 30 [sccm], 1 [mtorr], 20 [min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.299-300
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• 2005

본 연구에서는 $SiO_2$ 판상체 위에 저굴절 및 고굴절 금속 산화물을 다층 교차 증착하여 Pearl Pigment를 sputtering 공법을 이용하여 증착하였다. Pearl Pigment는 Essential Macleod program 을 이용한 색상과 증착된 pigment의 색상이 파장에 따라 blue, violet, pink, red, orange, yellow, green 등(Wave length : 450$\sim$730 nm)으로 동일하게 나타났고, 기존의 제품에 비해 색상효과가 뛰어나고, 표면 morphology가 우수하였다. 주사전자현미경(SEM)으로 막 두께, 표면 조직 및 입자 크기를 측정하였고, 스펙트로미터를 사용하여 각각의 파장을 분석하였으며 EDS, XRD를 이용하여 정성 및 정량 분석을 하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.140-148
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• 1998

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.44-48
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• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.