• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.81-85
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• 2003

The Bi-directional Wireless Capsule endoscope con sists of CMOS Image sensor, FPGA, LED, Battery, DC to DC Converter, Transmitter, Receiver and Antennas. The RF transmitter at 1.2GHz range is designed and fabricated with 10 mm(diameter)x1.6 mm(thickness) dimension considering the maximum permission exposure(MPE), system size, power consumption, linearity and modulation method. The fabricated RF receiver at 400MHz range can demodulate the external signals so as to control the behavior of CMOS image sensor. four LEDs and Transmitter.

• International journal of advanced smart convergence
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• v.10 no.3
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• pp.81-88
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• 2021

This paper proposes two types of subharmonic RF receiver front-end (called LMV) where, in a single stage, quadrature voltage-controlled oscillator (QVCO) is stacked on top of a low noise amplifier. Since the QVCO itself plays the role of the single-balanced subharmonic mixer with the dc current reuse technique by stacking, the proposed topology can remove the RF mixer component in the RF front-end and thus reduce the chip size and the power consumption. Another advantage of the proposed topologies is that many challenges of the direct conversion receiver can be easily evaded with the subharmonic mixing in the QVCO itself. The intermediate frequency signal can be directly extracted at the center taps of the two inductors of the QVCO. Using a 65 nm complementary metal oxide semiconductor (CMOS) technology, the proposed subharmonic RF front-ends are designed. Oscillating at around 2.4 GHz band, the proposed subharmonic LMVs are compared in terms of phase noise, voltage conversion gain and double sideband noise figure. The subharmonic LMVs consume about 330 ㎼ dc power from a 1-V supply.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.6 s.360
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• pp.64-70
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• 2007

This paper presents a novel unified DC offset cancellation and I/Q regeneration for five-port junction based direct receivers. It utilizes the symmetry characteristics of the single-frequency continuous-wave (CW) signal, making it possible that the proposed method can be used regardless of carrier phase offset. The proposed method eliminates the additional DC offset cancellation and reduces the I/Q regeneration parameter estimation time. Since the proposed method employs a single-frequency CW signal independent of the modulation scheme, five-port junction based direct receivers can be used for the demodulation of orthogonal frequency-division multiplexing and continuous phase modulation as well as phase shift-keying.

• ETRI Journal
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• v.28 no.3
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• pp.355-363
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• 2006

This paper presents a low-cost RF parameter estimation technique using a new RF built-in self-test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using $0.18\;{\mu}m$ SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• 한국ITS학회:학술대회논문집
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• v.2006 no.10
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• pp.304-307
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• 2006

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.492-492
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• 2012

RF biased inductively coupled plasma (ICP) has been widely used in various semiconductor etching processes and laboratory plasma researches. However, almost researches for the RF bias have been focused on the controls of dc self-bias voltages, even though the RF bias can change plasma parameters, such as electron temperature, plasma density, electron energy distribution (EED), and their spatial distributions. In this study, we report on the effect of the RF bias on the plasma parameters and the EEDs with various external parameters, such the RF bias power, the ICP power, the gas pressure, the gas mixture, and the frequency of RF bias. Our study shows the correlation between the RF bias and the plasma parameters and gives a crucial key for the understanding of collisionless electron heating mechanism in the RF biased ICP.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.8
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• pp.1125-1131
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• 2013

Wireless power transmission technology has been studied variety. Recently, wireless power transmission technology used by resonance and magnetic induction field is applied to various fields. However, magnetic resonance and inductive coupling are have drawbacks - power transmission distance is short. Microwave transmission and accept techniques have been developed to overcome short distance. However, improvement in efficiency is required. This paper, propose a high-efficiency microwave energy acceptor IC(EAIC). Suggested EAIC is consists of RF-DC converter and DC-DC converter. Wide Input power range is -15 dBm ~ 20 dBm. And output voltage is boosted up to 5.5 V by voltage boost-up circuit. EAIC can keep the output voltage constant. Available efficiency of RF-DC converter is 95.5 % at 4 dBm input. And DC-DC efficiency is 94.79 % at 1.1 mA load current. Fully EAIC efficiency is 90.5 %.