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급속열처리 방식을 이용한 다결정 실리콘 소자의 형성된 전기적 특성 (Improved Electrical Properties of Polysilicon TFT Using Rapid Thermal Processing)

  • 홍찬희;박창엽;이희국
    • 대한전자공학회논문지
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    • 제27권12호
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    • pp.1865-1869
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    • 1990
  • N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10\ulcorner) were fabricated using RTP (Rapid Thermal Processor) and hydrogen passivation. The N+ source, drain and gate were annealed and recrystallized using RTP at temperature of 1000\ulcorner-1100\ulcorner. But the active areas were not specially crystallized before growing the gate oxide. Without the hydrogen passivarion, excellent transistor characteristics (ON/OFF=5.10**6, S=85MV/DEC, IL=51pA/\ulcorner) were obtained for 1.5\ulcorner MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

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FT의 빠른 신뢰도계산을 위한 연구 (A Study on the rapid calculating of reliability for Fault Tree)

  • 이일재;이광원
    • 한국안전학회지
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    • 제12권4호
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    • pp.180-190
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    • 1997
  • A new method in the fault tree analysis (FTA) for the reliability calculation is suggested. Two steps are necessary in traditional method in evaluation of the occurrence probability of top event in fault tree (FT). The first step is to find the minimal outsets, and the second one is to substitute the result into the poincare equation. In order to reduce the enormous computing time of this method, lots of rapid algorithms have been developed. Almost of all achievements were, however, based on the partial structural properties of FT. In this paper, the FT is transformed to a non-linear graph G which has the same minimal outsets of original n, and then the reliability is calculated using the domination theory. In this new method, the required number of equation terms are at most $2^n$ (n is node number of graph G), while $2^m$-1 (m is the number of minimal cutsets) calculation terms are required in the poincare equation in traditional method. Since m>>n in general. our new method reduces the calculation time significantly.

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급속열처리에 의한 TiN/$TiSi_2$ 이중구조막을 이용한 submicron contact에서의 전기적 특성 (The Electrical Roperties of TiN/$TiSi_2$ Bilayer Formed by Rapid Thermal Anneal at Submicron Contact)

  • 이철진;성만영;성영권
    • 전자공학회논문지A
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    • 제31A권9호
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    • pp.78-88
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    • 1994
  • The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

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급속열처리에 의한 $TiN/TiSi_2$ 이중구조막 혈성에 대한 Ti-Si 계면의 얇은 산화막의 영향 (Effects of the thin $SiO_2$ film on the formation of $TiN/TiSi_2$ bilayer formed by rapid thermal annealing)

  • 이철진;성만영;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1223-1225
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    • 1994
  • The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

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Development of a Rapid Spectrophotometric Method for Detecting Bacterial Mucinase Complex

  • Kim, Yoon-Hee;Cha, Jae-Ho
    • Journal of Microbiology and Biotechnology
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    • 제12권2호
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    • pp.345-348
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    • 2002
  • A rapid spectrophotometric method for detecting the mucinase complex was developed. Bovine submaxillary mucin is cleaved by commercial mucinase between the oligosaccharide chain and the side chain of peptide linkage, thereby liberating the N-acetyl neuraminic acid (NANA). The release of NANA resulted in an increase of absorbance at 280 nm. The susceptibility to NANA by the new method was found to be at least 10-fold more sensitive than the thiobarbituric acid method. Moreover, the quantification of NANA released from mucin by commercial neuraminidase and partially purified Vibrio parahaemolyticus mucinase showed a good linear correlation in proportion to the concentration of the enzyme used. These results demonstrate that the rapid identification of mucin degradation can be determined by a spectrophotometric assay, thereby providing a new, fast, and sensitive method for assaying the bacterial mucinase complex.

이온주입 및 열처리 조건에 따른 박막접합의 특성 비교 (Comparison of shallow junction properties depending on ion implantation and annealing conditions)

  • 홍신남;김재영
    • 전자공학회논문지D
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    • 제35D권7호
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    • pp.94-101
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    • 1998
  • To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

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Fabrication and Characteristics Study of $n-Bi_2O_3$/n-Si Heterojunction

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.119-123
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    • 2006
  • This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

고주파유도 가열에 의한 나노구조 Fe-Si3N4 복합재료의 합성 및 급속소결 (Rapid Sintering and Synthesis of a Nanocrystalline Fe-Si3N4 Composites by High-Frequency Induction Heating)

  • 고인용;두송이;도정만;윤진국;박상환;손인진
    • 대한금속재료학회지
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    • 제49권9호
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    • pp.715-719
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    • 2011
  • Nanopowders of $Fe_3N$ and Si were fabricated by high-energy ball milling. A dense nanostructured $12Fe-Si_3N_4$ composite was simultaneously synthesized and consolidated using a high-frequency induction-heated sintering method for 2 minutes or less from mechanically activated powders of $Fe_3N$ and Si. Highly dense $12Fe-Si_3N_4$ with a relative density of up to 99% was produced under simultaneous application of 80 MPa pressure and the induced current. The microstructure and mechanical properties of the composite were investigated.

잡종 2세대(Fischer 계: Wistar-Kyoto 계) 흰쥐에서 Arylamine N-acetyltransferase 2의 다형성과 Dapsone의 대사능과의 연관성에 대한 연구 (Relationships between Dapsone Metabolic Activity and Polymorphism of Arylamine N-acetyltransferase 2 in the F2 Hybrid Rats)

  • 신인철;강주섭;고현철;이창호;안동춘;백두진;심성한;조율희
    • Biomolecules & Therapeutics
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    • 제10권3호
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    • pp.193-199
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    • 2002
  • The arylamine N-acetyltransferases (NATs) are a family of enzymes that N-acetylate mylhydrazines and arylamines through transfer of an acetyl group from acetyl coenzyme A. This activity was found to vary among individuals as a Mendalian trait and the basis of the genetic differences in human NAT activity is one of the best of the genetic studied examples of pharmacogenetic variation. The classical N-acetylation polymorphism is regulated at the NAT2 locus, which segregates individuals into rapid, intermediate, and slow acetylator phenotypes. In this study, the relationship between NAT2 activity phenotype using HPLC:UV assay for the determination of dapsone and monoacetyldapsone in plasma and NAT2 genotype by PCR-RFLP (polymerase chain reaction-restriction fragment length polymorphism) was investigated in the F2 hybrid (Fischer 344 vs Wistar-Kyoto) rats. Three Common mutant alleles at the NAT2 gene locus have been identified in the F2 generation progeny of Fischer 344 rats as raid acetylator and Wistar-Kyoto rats as slow acetylator segregated into three modes (low, intermediates, and high) with simple Mendelian inheritance. The metabolic activity of NAT2 of the intermediate and rapid acetylators is significant1y greater than slow acetylator, but the metabolic activity of rapid acetylator is not significantly different from Intermediate type. Therefore, we could observe that complete trimodal NAT2 genotypic alleles and incomplete trimodal NAT2 metabolic phenotypic distribution in tile F2 hybrid rats. These observations suggest that the relationships between NAT2 genotype and metabolic phenotype exists and F2 hybrid (Fischer 344: Wistar-Kyoto) animal models about NAT2 polymorphism might be applied in the toxicity and pharmacogenetic studies of arylamine drugs and carcinogens.