• Title/Summary/Keyword: RAM2

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Cool gas and star formation properties of ram pressure stripped galaxy NGC 4522: Insights from the TIGRESS simulation

  • Choi, Woorak;Lee, Bumhyun;Chung, Aeree;Kim, Chang-Goo
    • 천문학회보
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    • 제44권1호
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    • pp.77.2-77.2
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    • 2019
  • NGC 4522 is one of the best-known examples among the Virgo galaxies undergoing active ram pressure stripping. There have been a number of detailed observational and theoretical studies on this galaxy to constrain its stripping and star formation history. However, the impact of ram pressure on the multi-phased ISM, in particular molecular gas which plays an important role in star formation, is still not fully understood. NGC 4522, as a system where the extra-planar molecular gas is identified, is an ideal case to probe in depth how ram pressure affects molecular gas properties. Aiming to get more theoretical insights on the detailed stripping process of multi-phased ISM and its consequences, we have conducted simulations using the TIGRESS which could reproduce the realistic ISM under comparable conditions as NGC 4522. In this work, we compare the fraction of gas mass to stellar mass, star formation rates and gas depletion time scales of NGC 4522 with those measured from the simulations, not only inside the disk but also in the extra-planar space.

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초폭굉 모드 램가속기의 혼합기 강도 특성에 대한 수치적 연구 (A Numerical Study on Charactericstics of Mixture Composition in Superdeonative Mode Ram Accelerator)

  • 성근민;정인석
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년도 제30회 춘계학술대회논문집
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    • pp.244-247
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    • 2008
  • ISL의 초폭굉 모드 램 가속기 실험을 바탕으로 하여 혼합기 강도를 조정하여 수치해석을 수행하였다 ($3.0CO_2$ 희석과 $2.5CO_2$ 희석). 계산결과 $3.0CO_2$ 희석의 경우는 초기 점화가 이루어지지 않아 탄체가 가속되지 않은 반면 $2.5CO_2$ 희석을 한 경우에는 점화가 이루어지고 높은 가속을 보임을 알 수 있었다. 이것은 탄체의 가속성능이 혼합기의 강도에 단순히 비례하지 않으며 점화가 가능한 최소한의 혼합기 강도 이상에서만 초폭굉 모드 램 가속기가 정상적으로 작동함을 알 수 있었다.

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RAM(일반기능평가기법)을 이용한 내륙 습지 기능 평가 (A Study on the Assessment for the Functions of Inland Wetlands Using RAM(Rapid Assessment Method))

  • 구본학;김귀곤
    • 한국환경복원기술학회지
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    • 제4권3호
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    • pp.38-48
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    • 2001
  • A wetland is an ecosystem which is the most useful and highly-energetic transition area. This study has been carried out to develop the wetland function assessment methods and apply on the natural wetlands (Mul-young-ari wetland in Jeju-island and Bangdong wetland in Taejon Metropolitan city) using RAM (Rapid Assessment Method). The RAM is useful method for assessing the wetland functions in terms of general functions acquired by once or twice onsite surveying. Eight functions of 2-12 variables each are analyzed for assessing the wetland functions. The results are as follows : 1) The conservation values of two wetlands are "High". 2) In Mul-young-ari wetland, such functions as groundwater discharge, floral diversity and wildlife habitat, shoreline/stream bank protection are relatively high, but some functions such as flood/storm water storage, aesthetics and recreation are "Moderate" - "High". 3) In Bangdong wetland, such functions as floral diversity and wildlife habitat, groundwater discharge, flood/storm water storage, aesthetics and recreation are high, and another functions are "Moderate" - "High". The taxonomy of this study stems from assessing functions of inland wetlands using indices of RAM. So It is needed that consequent studies are to be performed with verifying the variables and indices.

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잠수함의 비음향 스텔스 기법에 관한 연구 (A Study on Non-acoustic Stealth Techniques of Submarine)

  • 최창묵
    • 한국정보통신학회논문지
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    • 제16권6호
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    • pp.1330-1334
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    • 2012
  • 잠수함이 가장 취약한 시기는 잠수함이 스노클이나 잠망경 운용을 위하여 잠망경 심도로 항해할 경우이며, 이때에는 비음향 탐지센서인 레이더와 광학, 사람에 의한 시각에 탐지될 확률이 매우 높다. 따라서 본 논문에서는 이러한 상황에서 탐지되는 취약성을 극복하고자 잠수함 마스트 및 잠망경 부분에 비음향 스텔스를 적용하고자 한다. 먼저 비음향 탐지센서에 대해서 조사하고, 그에 따른 스텔스 기법을 분야별 분석하여 최적화한 결과 다층형 구조로 선체표면부터 RAM layer, IR layer, Camouflage layer 구조로 각각 RAM layer는 자성재료인 페라이트계열로 3~5 mm, IR layer는 Ceramic 또는 Nickel 계열로 1~2 mm, Camouflage layer는 군청색 계열 페인팅을 제시하였다.

The impact of ram pressure on the multi-phase ism probed by the TIGRESS simulation

  • Choi, Woorak;Kim, Chang-Goo;Chung, Aeree
    • 천문학회보
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    • 제43권2호
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    • pp.33.1-33.1
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    • 2018
  • Ram pressure stripping by intracluster medium (ICM) can play a crucial role in galaxy evolution in the high-density environment as seen by many examples of cluster galaxies. Although much progress has been made by direct numerical simulations of galaxies (or a galaxy) as a whole in a cluster environment, the interstellar medium (ISM) in galactic disks is not well resolved to understand responses of the ISM in details. In order to overcome this, we utilize the TIGRESS simulation suite that focuses on a local region of galactic disks and resolves key physical processes in the ISM with uniformly high resolution. In this talk, we present the results from the solar neighborhood TIGRESS model facing the ICM winds with a range of ram pressures. When ram pressure is weaker than and comparable to the ISM weight, the ICM winds simply reshape the ISM to the one-sided disk, but star formation rates remain unchanged. Although there exist low-density channels in the multiphase ISM that allow the ICM winds to penetrate through, the ISM turbulence quickly closes the channels and prevents efficient stripping. When ram pressure is stronger than the ISM weight, a significant amount of the ISM can be stripped away rapidly, and star formation is quickly quenched. While the low-density gas is stripped rapidly, star formation still occurs in the extraplanar dense ISM (1-2kpc away from the stellar disk). Finally, we quantify the momentum transfer from the ICM to the ISM using the mass-and momentum-weighted velocity distribution functions of each gas phase.

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플라즈마 표면처리가 TiO2/TiO2-x 저항 변화형 메모리에 미치는 영향 (Effect of Plasma Treatment on TiO2/TiO2-x Resistance Random Access Memory)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.454-459
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    • 2020
  • In this study, a TiO2/TiO2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO2/TiO2-x-based ReRAM was evaluated by applying RF power to the TiO2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

Cold Boot Attack on Encrypted Containers for Forensic Investigations

  • Twum, Frimpong;Lagoh, Emmanuel Mawuli;Missah, Yaw;Ussiph, Najim;Ahene, Emmanuel
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제16권9호
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    • pp.3068-3086
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    • 2022
  • Digital Forensics is gaining popularity in adjudication of criminal cases as use of electronic gadgets in committing crime has risen. Traditional approach to collecting digital evidence falls short when the disk is encrypted. Encryption keys are often stored in RAM when computer is running. An approach to acquire forensic data from RAM when the computer is shut down is proposed. The approach requires that the investigator immediately cools the RAM and transplant it into a host computer provisioned with a tool developed based on cold boot concept to acquire the RAM image. Observation of data obtained from the acquired image compared to the data loaded into memory shows the RAM chips exhibit some level of remanence which allows their content to persist after shutdown which is contrary to accepted knowledge that RAM loses its content immediately there is power cut. Results from experimental setups conducted with three different RAM chips labeled System A, B and C showed at a reduced temperature of -25C, the content suffered decay of 2.125% in 240 seconds, 0.975% in 120 seconds and 1.225% in 300 seconds respectively. Whereas at operating temperature of 25℃, there was decay of 82.33% in 60 seconds, 80.31% in 60 seconds and 95.27% in 120 seconds respectively. The content of RAM suffered significant decay within two minutes without power supply at operating temperature while at a reduced temperature less than 5% decay was observed. The findings show data can be recovered for forensic evidence even if the culprit shuts down the computer.

Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device

  • Kim, Jang-Han;Kim, Hong-Ki;Jang, Ki-Hyun;Bae, Tae-Eon;Cho, Won-Ju;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.373-373
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    • 2014
  • Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

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2차원 이송-확산 모형을 이용한 취수장 유입 수질 예측 (Water Quality Modeling for Intake Station by 2-dimensional Advection-Dispersion Model)

  • 김재동;김지훈;김영도;송창근;서일원
    • 상하수도학회지
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    • 제25권5호
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    • pp.667-679
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    • 2011
  • In this study, the influences of pollutant from Dae-po Stream and So-gam Stream located at the downstream of Nak-dong River on the water quality at Mul-geum water intake station were analyzed using RAMS model. Field measurements of velocity by ADCP, and water quality distribution of BOD and TP by water sampling were carried out to present the input and verification data for numerical simulations. The comparison between RAM2 and ADCP measurement, which aimed for the analysis of 2-D velocity distribution around Mul-geum water intake station showed that two results matched well along the spanwise direction. The prediction of pollutant concentration by RAM4 agreed fairly well with the measured data except for the points nearby right banks in the vicinity of tributary pollutant source. Flushing effect by the increase of mainstream discharge in Nak-dong River was analyzed to provide the damage mitigation in preparation for the accidental water pollution. With increasing mainstream discharge, high velocity and increased water quantity induced increasing dilution effect, thereby decreasing the inflow pollutant concentration rapidly.

As2Se3 기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상 (Improving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory)

  • 남기현;김충혁
    • 한국전기전자재료학회논문지
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    • 제29권6호
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    • pp.327-331
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    • 2016
  • Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.