• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.5
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• pp.651-659
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• 2012

Target operational availability setting is the first step to setting up a goal which a weapon system development project have to achieve and doing RAM analysis during whole life of a weapon system. It is important as a key factor to doing RAM analysis in the early phase of weapon system development. This paper present a methodology to set a target operational availability for, especially, a warship when it develop. This methodology uses Operational Mode Summary/Mission Profile(OMS/MP) of the developing warship and RAM analysis results of similar warships to calculate wartime and peacetime target operational availability. It will be used in early phase of not only warship development but also army or aircraft weapon systems when these develop.

• The Transactions of the Korea Information Processing Society
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• v.4 no.3
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• pp.649-658
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• 1997

Database management systems(DMBS)using bolatile memory shluld have a recovery function to protect data against system failutes.Recovery requires much overhead in transaction proessing and is one of the great factors that deteriorate the system performance.Recently, there have been a lot of studies on database systems with nonbolatile memory to enhance the performance.A nonbolatile memory called DFeRAM is one of the promising memory devices of the future technology, but this device does not support fine-franularity licking.In this paper, we present a dual plane FeRAM(DFeRAM)architecture to support the fine-granularity locking.We also propose a recovery algorithm for the database system with the DFeRAM based on a shadow paging methed.In order to analze the performance of the proposed algorithm, we present an analytical model and analyze the performance using the moedl.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.2
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• pp.67-78
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• 2016

The emerging Spin-Transfer Torque RAM (STT-RAM) is a promising component that can be used to improve the efficiency as a result of its high storage density and low leakage power. However, the state-of-the-art STT-RAM is not ready to replace SRAM technology due to the negative effect of its write operations. The write operations require longer latency and more power than the same operations in SRAM. Therefore, a hybrid cache with SRAM and STT-RAM technologies is proposed to obtain the benefits of STT-RAM while minimizing its negative effects by using SRAM. To efficiently use of the hybrid cache, it is important to place write intensive data onto the cache. Such data should be placed on SRAM to minimize the negative effect. Thus, we propose a technique that optimizes placement of data in main memory. It drives the proper combination of advantages and disadvantages for SRAM and STT-RAM in the hybrid cache. As a result of the proposed technique, write intensive data are loaded to SRAM and read intensive data are loaded to STT-RAM. In addition, our technique also optimizes temporal locality to minimize conflict misses. Therefore, it improves performance and energy consumption of the hybrid cache architecture in a certain range.

• International Journal of Aeronautical and Space Sciences
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• v.16 no.1
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• pp.41-49
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• 2015

Analysis and test of hydrodynamic ram in welded metallic tanks containing water were performed to investigate the phenomena and to understand the effects on the resulting structural behavior. Arbitrary Lagrange-Euler coupling method was used for the analysis of the fluid-structure interaction occurring in the hydrodynamic ram, where the projectile, tank, and water are exchanging load, momentum, and energy during the traveling of the projectile through the water of the tank. For a better representation of the physical phenomena, modeling of the welded edges is added to the analysis to simulate the earlier weld line fracture and its influence on the resulting hydrodynamic ram behavior. Corresponding hydrodynamic tests were performed in a modified gas gun facility, and the following panel-based examinations of various parameters, such as displacement, velocity, stress, and energy, as well as hydrodynamic ram pressure show that the analysis and test are well correlated, and thus the results of the study reasonably explain the characteristics of the hydrodynamic ram. The methodology and procedures of the present study are applicable to the hydrodynamic ram assessment of airframe survivability design concepts.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.39.3-39.3
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• 2019

Ram pressure stripping due to the intracluster medium (ICM) is an important environmental process, which causes star formation quenching by effectively removing cold interstellar gas from galaxies in dense environments. The evidence of diffuse atomic gas stripping has been reported in several HI imaging studies. However, it is still under debate whether molecular gas (i.e., a more direct ingredient for star formation) can be also affected and/or stripped by ram pressure. The goal of this thesis is to understand the impact of ram pressure on the molecular gas content of cluster galaxies and hence star formation activity. To achieve this, we conducted a series of detailed studies on the molecular gas properties of three Virgo spiral galaxies with clear signs of active HI gas stripping (NGC 4330, NGC 4402, and NGC 4522) based on high-resolution CO data obtained from the Submillimeter Array (SMA) and Atacama Large Millimeter/submillimeter Array (ALMA). As a result, we find the evidence that the molecular gas disk also gets affected by ram pressure in similar ways as HI even well inside of the stellar disk. In addition, we detected extraplanar 13CO clumps in one of the sample, which is the first case ever reported in ram pressure stripped galaxies. By analyzing multi-wavelength data (e.g., Hα, UV, HI, and CO), we discuss detailed processes of how ram pressure affects star formation activities and hence evolution of cluster galaxies. We also discuss the origin of extraplanar 13CO, and how ram pressure can potentially contribute to the chemical evolution of the ICM.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• The Journal of the Korea Contents Association
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• v.12 no.12
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• pp.395-412
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• 2012

RAM analysis using field data is important and useful for acquisition and operation of weapon systems. But this kind of analysis didn't conducted due to the absence of weapon system's failure data in case of warship. This study suggest failure tracking process based on maintenance and repair parts consumption data and proves suggested method enables conducting RAM analysis. This method obtains validity through field operator's reviews. The results on 9 warships in this study significantly correspond with weapon system operator's experiences. Because the result of this study contains effects of various operational environments in field, it will useful for correction and verification on existing another weapon system's RAM estimates. If this kind of RAM data are sufficiently accumulated, it will be used to DB of korean unique RAM analysis.

• Convergence Security Journal
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• v.19 no.2
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• pp.163-174
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• 2019

RAM analysis determines the range of resources to be invested by presenting the development goals of the weapon system. If the RAM analysis is not performed properly, it can cause a huge increase in business costs. While the cumulative cost ratio in the concept study is less than 1% of the total cost, 65-70% of the total lifecycle cost is determined and can't be reduced later. Therefore, RAM analysis is crucial in precedent study. When calculating the target RAM value by writing an existing OMS/MP, new functions and the future missions are hardly considered and reflected. Therefore, this paper proposes a method to establish OMS/MP by deriving arguments based on Delphi and Bayesian theory focusing on unmanned combat vehicle.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.6
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• pp.802-811
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• 2012

This study proposes an OMS/MP preparation methodology using a simulation method instead of a survey method. We applied our methodology to the next generation detection radar, providing reasonable peace- and war-time OMS/MP values. Based on these results, we propose the process to calculate RAM objective values. The previous survey method required to supplement its method since the method used data from a similar weapon system. In addition, the previous method didn't provide enough reliability for the future weapon system. Instead of using the previous survey method, we propose to use war game simulation, which provides a better OMS/MP values. Based on these results, we propose the logical consecutive process that prepares combat and simulation scenarios, peace- and war-time OMS/MP values and RAM objective values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.