• 제목/요약/키워드: RAM : Reliability

검색결과 149건 처리시간 0.022초

군장비 신뢰성활동의 최근 동향 (Recent Trend of Reliability Activities for Military Systems)

  • 김철
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제7권3호
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    • pp.111-118
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    • 2007
  • In 2000, US Army Test and Evaluation Command (ATEC) released the status of reliability requirement levels and achievements for the military equipment which evaluated through the operational tests from 1985 to 1990 and from 1996 to 2000. The rates of military equipments that do not meet reliability requirements are 59% from 1985 to 1990 and 80% from 1996 to 2000. Thus, the US Army has figured out causes, taken steps and put them into practice, This paper is about the recent reliability problems and the latest tendency about US military equipment to acquirere liability level.

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Availability Analysis of a System Having Three Units : Super Priority, Priority and Ordinary Under Pre-empty Resume Repair Policy

  • Singh, V.V.;Singh, S.B.;Ram, M.;Goel, C.K.
    • International Journal of Reliability and Applications
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    • 제11권1호
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    • pp.41-53
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    • 2010
  • In the present paper we develop a mathematical model that facilitates the calculation of reliability of a complex repairable system having three units namely super priority, priority and ordinary. The system is analyzed with the application of Gumbel Hougaard copula when different types of repair possible at a particular state due to deliberate failure. Various reliability measures such as reliability, MTTF and profit function have been evaluated by using supplementary variable and Laplace transform techniques.

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금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성 (Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure)

  • 남기현;김장한;정홍배
    • 한국전기전자재료학회논문지
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    • 제29권7호
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    • pp.400-403
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    • 2016
  • The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

리눅스에서 압축을 이용한 안정적인 네트웍 램의 설계 및 구현 (The Design and Implementation of the Reliable Network RAM using Compression on Linux)

  • 황인철;정한조;맹승렬;조정완
    • 한국정보과학회논문지:시스템및이론
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    • 제30권5_6호
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    • pp.232-238
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    • 2003
  • 기존 운영체제들은 물리적 메모리보다 더 많은 양의 메모리를 사용자에게 제공하기 위하여 가상 메모리 페이징 시스템을 사용한다. 가상 메모리 페이징 시스템에서는 물리적 메모리가 부족해지면 교체되는 메모리 내용을 저장시킬 수 있는 스왑 장치를 필요로 하는데, 기존 운영 체제들에서는 디스크를 스왑 장치로 사용한다. 디스크는 물리적 메모리에 비해 접근 속도가 매우 느리기 때문에 스왑핑이 일어나면 물리적 메모리의 접근 시간에 비해 많은 시간을 기다려야 한다. 여러 대의 PC를 빠른 네트웍으로 묶는 클러스터 환경에서는 디스크의 접근 시간보다 네트웍을 통하여 다른 워크스테이션의 메모리에 접근하는 시간이 더 빠르기 때문에 사용 가능한 다른 워크스테이션의 메모리를 디스크 대신 빠른 장치로 사용하고자 하는 네트웍 램이 제시되었다. 본 논문에서는 Linux 운영 체제에서 스왑 장치 관리자로 네트웍 램을 설계, 구현하여 디스크를 스왑 장치로 사용하는 시스템보다 네트웍 램을 스왑 장치로 사용하는 시스템이 프로그램 수행 속도에 있어 평균 40.3%의 성능 향상이 있었다. 그리고 기존 RAID 시스템에서 사용하던 안정성 제공 방법과 다른 프로세서의 성능을 효율적으로 이용하는 새로운 안정성 제공방법을 제시하였고 평가 결과 본 논문에서 제시한 새로운 안정성 제공 방법인 압축을 이용한 복사본을 두는 방법은 적은 서버 메모리와 메시지를 사용하여 유사한 성능을 나타낸다.

P-RAM 기술의 전망

  • 정홍식
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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    • pp.21-40
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    • 2006
  • [ ${\Box}$ ] Opportunities for PRAM Nearly ideal memory characteristics Potential for high density & low cost memory ${\Box}$ Technical Challenges Writing current reduction is the most urgent issue. ${\to}$ chalcogenide, programming volume, current density, heat loss control Improvement of writing speed, reliability ${\Box}$ Prospects (PRAM as a Mainstream Memory) Evenn, We have demonstrated 256Mb PRAM Realization of high density and low cost PRAM with good reliability will be key succss factor. We need to develop PRAM specific applications.

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함정탑재 유도무기의 신뢰도 향상 분석프로세스 (Improved Analysis Process of Reliability of Shipped Guided Weapons)

  • 이경행;한지희;권용수;고남경
    • 시스템엔지니어링학술지
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    • 제3권2호
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    • pp.33-38
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    • 2007
  • This paper describes a basic process of reliability analysis in shipped guided weapons. The OMS/MP provides originating data for RAM analysis. However, The process of reliability analysis is often done with an insufficient understanding of OMS/MP. This work proposed the improved reliability analysis process with Relax. It is shown that the process is applicable to shipped guided weapons.

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시스템의 개발 및 초기생산 단계에서의 신뢰성 성장관리 (Reliability Growth Management in the Development and Initial Production of a System)

  • Jung Won;Lee Hwan-Tae
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2005년도 춘계학술대회 논문집
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    • pp.187-192
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    • 2005
  • Under development program for a complex system, the total system or major subsystems are tested to failure, system failure modes are analyzed, and design and engineering changes are made to eliminate these failure modes. If this TAAF(test-analyze-and-fix) process is continued, and modifications are made in a competent manner, then the system reliability increase. This paper presents the reliability growth theory and applies it to some subsystems during their development and initial production testing. The application of these techniques is a part of the product assurance function that plays an important role in product reliability improvement. In addition, the EN 50126 requires essentially reliability growth for RAM growth monitoring.

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KHP 총소유비용의 민감도 분석 사례 연구 (A Case Study on Sensitivity Analysis of KHP Total Ownership Cost)

  • 변형균;이상우;권문원;김주균;최영환
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제11권2호
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    • pp.187-212
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    • 2011
  • KHP project sets total ownership cost as the target cost by applying CAIV and administrates total ownership cost through compromise analysis, a periodical estimate and management of design alternatives for each development. Based on expected cost results, sensibility of total ownership cost is analyzed complying with the change of reliability, availability, maintainability and other related factors. By considering potential total ownership cost saving methods, first of all, this paper identifies total ownership cost changing effects for each related factor, secondly, suggests total ownership cost and maintenance and operating cost saving methods via finding components that affect total ownership cost and lastly, suggests total ownership cost saving directions that may be applied to other projects in the future.

철도차량시스템의 위험기반 RAMS 평가에 관한 연구 (A Study on the Risk based RAMS Assessment for Railway Rolling Stock Systems)

  • 박문규;한성호
    • 전기학회논문지P
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    • 제64권4호
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    • pp.220-230
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    • 2015
  • Rolling stock RAMS is a field of engineering which integrates reliability, availability, maintainability and safety (RAMS) characteristics into an inherent product design property through rolling stock system engineering process. It is implemented to achieve operational objectives successfully, and recently the RAMS has become a rapidly growing engineering discipline because it has a great potential to ensure safety and improve cost effectiveness. However, the Korean rolling stock industry has not yet implemented RAMS management in the rolling stock engineering process, despite the issue having been addressed since the introduction of the KTX. Thus, this paper discusses the processes, methods and techniques for RAMS assessment in three parts. Firstly, it outlines a process of the overall RAMS performance assessment for achieving technical RAMS design criteria. Secondly, it discusses a process for assessing the operational RAM and allocating the RAM. This paper also proposes a model for assessing safety-based risk management, which includes five analytic techniques for identifying the causes and consequences of a system failure. Finally, a case example is provided for the risk assessment of the pneumatic braking device.

기판 전압이 n-채널 무접합 MuGFET 의 Z-RAM 특성에 미치는 영향 (The impact of substrate bias on the Z-RAM characteristics in n-channel junctionless MuGFETs)

  • 이승민;박종태
    • 한국정보통신학회논문지
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    • 제18권7호
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    • pp.1657-1662
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    • 2014
  • 본 연구에서는 다중게이트 구조인 n-채널 무접합(junctionless) MuGFET 의 기판 전압이 zero capacitor RAM(Z-RAM) 특성에 미치는 영향에 대하여 실험적으로 분석하였다. 핀 폭이 50nm 이고, 핀 수가 1인 무접합 트랜지스터의 드레인에 3.5V, 기판에 0V 가 인가된 경우, 메모리 윈도우는 0.34V 이며 센싱 마진 은 $1.8{\times}10^4$ 의 특성을 보였다. 양의 기판 전압이 인가되면 충격 이온화가 증가하여 메모리 윈도우와 센싱 마진 특성이 개선되었다. 기판 전압이 0V에서 10V로 증가함에 따라, 메모리 윈도우 값은 0.34V 에서 0.96V 로 증가하였고, 센싱 마진 또한 소폭 증가하였다. 기판 전압에 따른 무접합 트랜지스터의 메모리 윈도우 민감도가 반전 모드 트랜지스터 보다 큰 것을 알 수 있었다. Gate Induced Drain Leakage(GIDL) 전류가 작은 무접합 소자의 경우 반전모드 소자에 비해서 보유시간 특성이 좋을 것으로 사료된다. Z-RAM의 동작 신뢰도 평가를 위해서 셋/리셋 전압 및 전류의 변화를 측정하였다.