• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.188-188
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• 2007

ZnO 박막은 넓은 밴드갭과 가시광 영역에서의 높은 투과 및 제조조건에 따른 비저항의 범위가 크게 달라짐으로 태앙전지, 디스플레이등의 투명 전극등에 널리 응용되어지고 있다. 본 살험에서는 이러한 장점을 갖는 ZnO 박막을 먼저 r. f.-sputter 법으로 제조하여 습식으로 식각하였다. 식각된 ZnO 필름은 OLED 및 디스플레이의 적용에 필요한 식각율과 표면구조 전기적 특성을 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.266-272
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• 2000

Sputtered $MoS_2$ thin films provide lubrication and wear improvements for vacuum and space applications. In this study, deposition of $MoS_2$ thin films by R.F. magnetron sputtering was studied with regard to the micro-structural change of $MoS_2$ film and mechanical properties. The coating parameters such as the working pressure, the RF power, the substrate temperature, the etching time were varied to determine how these parameters affected the film morphology and mechanical properties of deposited films. The best wear properties and critical load were observed with the film deposited at $70^{\circ}C$, 1.0$\times$$10^{ -3}$ Torr, 170W and 1 hour deposition time. The critical load increased with the increase of sputter etching time.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.435-438
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• 2003

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.208-208
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• 2003

RF 마그네트론 스퍼터링법을 이용하여 Ar과 $O_2$의 유량을 25sccm씩 흘리면서 $SiO_2$/Si기판 위에 Sn $O_2$ 박막을 증착하였다. 증착된 박막은 columnar 구조로 성장하였으며 많은 입자들이 뭉쳐서 형성된 양배추꽃(cauliflower) 형태의 뭉친 입자(agglomerates)를 가지는 표면형상이 관찰되었다. 분위기에 따른 어닐링 효과를 확인하기 위하여 50$0^{\circ}C$에서 공기와 질소 분위기하에서 열처리하였다. 열처리한 후 표면거칠기가 개선되었으며, 표면형상의 변화가 발생하였다. 특히 50$0^{\circ}C$, 질소분위기에서 어닐링한 경우는 양배추꽃 형태의 표면형상이 소수의 작은 입자가 뭉친 형태로 분리되면서 입도분포가 개선되었다. 이러한 결과는 어닐링 과정에서 발생되는 응력을 완화시키기 위하여 표면형상의 변화가 발생하는 것으로 판단된다. XPS 측정 결과, 질소 분위기에서 어닐링한 후에 OIs와 Sn5/3d 피크가 낮은 결합에너지에 위치하고 있어 산소공공의 농도가 어닐링 전에 비하여 증가하였음을 확인할 수 있다. 어닐링 전후에 Sn $O_2$ 박막의 면저항 측정 값은 XPS 결과와는 달리 질소 분위기 어닐링한 후에 오히려 면저항값이 크게 증가하였다. 이러한 결과는 질소 분위기 어닐링한 후 표면형상의 변화에 기인하여 입자간의 연결성이 저하되어 면저항값이 증가한 것으로 추정된다. 산소분위기에서 어닐링한 후에 전체적으로 전기적 특성의 재현성이 개선되었으며 Sensitivity( $R_{air}$/ $R_{gas}$)가 향상되었음을 확인하였다.하였다.석을 통하여 La의 분포를 확인하였으며, HRTEM 분석을 통하여 미세구조분석을 실시하였다.2463eV였다. 10K에서 광발광 봉우리의 919.8nm (1.3479eV)는 free exciton(Ex), 954.5nm (1.2989eV)는 donor-bound exciton 인 I2(DO,X)와 959.5nm (1.2921eV)는 acceptor-bound exciton 인 I1(AO,X) 이고, 964.6nm(1.2853eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm (0.9239eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.가 높을수록 방출전류가 시간에 따라 급격히 감소하였다. 각 duty비에서 방출전류의 양이 1/2로 감소하는 시점을 에미터의 수명으로 볼 때 duty비 대 에미터 수명관계를 구해 높은 duty비에서 전계방출을 시킴으로써 실제의 구동조건인 낮은 duty비에서의 수명을 단시간에 예측할 수 있었다. 단속적으로 일어난 것으로 생각된다.리 폐 관류는 정맥주입 방법에 비해 고농도의 cisplatin 투여로 인한 다른 장기에서의 농도 증가 없이 폐 조직에 약 50배 정도의 고농도 cisplatin을 투여할 수 있었으며, 또한 분리 폐 관류 시 cisplatin에 의한 직접적 폐 독성은 발견되지 않았다이 낮았으나 통계학적 의의는 없었다[10.0%(4/40) : 8.2%(20/244), p>0.05]. 결론: 비디오흉강경술에서 재발을 낮추기 위해 수술시 폐야 전체를 관찰하여 존재하는 폐기포를 놓치지 않는 것이 중요하며, 폐기포를 확인하지 못한 경우와 이차성 자연기흉에 대해서는 흉막유착술에 더 세심한 주의가 필요하다는 것을 확인하였다. 비디오흉강경수술은 통증이 적고, 입원기간이 짧고,

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.734-736
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• 2012

Cadmium telluride (CdTe) films have been prepared on Corning 7059 glass, molybdenum (Mo), and polyimide (PI) substrates by r.f. magnetron sputtering technique. The influence of the sputter pressure on the structural and optical properties of these films was evaluated. In addition, a comparison of the properties of the films deposited on fferent substrates was performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.708-712
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• 2002

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.