• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.633-638
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• 2011

Mn substituted La, Sr or Ba-hexaaluminate were prepared by $(NH_4)_2CO_3$ co-precipitate method and calcined at $1,200^{\circ}C$ for 5 h. Catalysts were characterized by X-ray diffraction and $N_2$ physisorption and scanning electron microscope (SEM). Compared to $SrMnAl_{11}O_{19}$ and $BaMnAl_{11}O_{19}$, $LaMnAl_{11}O_{19}$ in which La located at mirror plane showed better crystallinity and high surface area, 13 $m^2/g$. $LaMnAl_{11}O_{19}$ revealed well developed plate-like structure which is characteristic structure of hexaaluminate. The catalytic activity of methane combustion increased in the following order: $LaMnAl_{11}O_{19}$ > $SrMnAl_{11}O_{19}$ > $BaMnAl_{11}O_{19}$ and was dependent on surface area of catalysts. 60 wt% $CeO_2/LaMnAl_{11}O_{19}$ calcined at $700^{\circ}C$ showed enhanced methane activity and methane was oxidized completely at low temperature ($700^{\circ}C$). It was confirmed that addition of ceria seems to be effective for the low and middle temperature combustion of methane. But, after calcination at high temperature of $1,200^{\circ}C$, it lost the promoting effect of ceria due to increase of ceria particle size and it had a limit to applying to the high temperature catalytic combustion.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1703-1710
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• 2009

The single-crystal structure of |$Ca_{35.5}$|[$Si_{121}Al_{71}O_{384}$]-FAU, $Ca_{35.5}Si_{121}Al_{71}O_{384}$ per unit cell, a = 24.9020(10) $\AA$, dehydrated at 673 K and 2 ${\times}\;10^{-6}$Torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\overline{3}$m at 294 K. The large single crystals of zeolite Y (Si/Al = 1.70) were synthesized up to diameters of ${\mu}m\;and\;Ca^{2+}$-exchanged zeolite Y were prepared by ion exchange in a batch method of 0.05 M aqueous Ca($NO_3)_2$ for 4 hrs at 294 K. The structure was refined using all intensities to the final error indices (using only the 971 reflections for which $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.038 (based on F) and $R_2$ = 0.172 (based on $F^2$). About 35.5 $Ca^{2+}$ ions per unit cell are found at an unusually large number of crystallographically distinct positions, four. Nearly filling site I (at the centers of the double 6-rings), 14.5 octahedrally coordinated $Ca^{2+}$ ions (Ca-O = 2.4194(24) $\AA$ and O-Ca-O = 87.00(8) and 93.00($8^o$) are found per unit cell. One $Ca^{2+}$ ion per unit cell is located at site II’ in the sodalite cavity and extends 0.50 $\AA$ into the sodalite cavity from its 3-oxygen plane (Ca-O = 2.324(13) $\AA$ and O-Ca-O = 115.5(10)o). The remaining twenty $Ca^{2+}$ ions are found at two nonequivalent sites II (in the supercages) with occupancies of 10 and 10 ions, respectively. Each of these $Ca^{2+}$ ions coordinates to three framework oxygens, either at 2.283(3) or 2.333(5) $\AA$, respectively, and extends either 0.24 or 0.54 $\AA$, respectively, into the supercage from the three oxygens to which it is bound. In this crystal, site I is the most populated; sites II’ and II are only sparsely occupied.$Ca^{2+}$+ appears to fit the octahedral site I best. No cations are found at sites III or III’, which are clearly less favorable for $Ca^{2+}$ ions in dehydrated zeolite Y.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.357-364
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• 2000

The structural, electrical and gas sensing characteristics of $LaFeO_3$ thin films fabricated by r.f. magnetron sputtering method on $Al_2O_3$ substrates were investigated. (121) domonant crystalline plane was observed for the films heat-treated at above $600^{\circ}C$ and gas sensing properties showed p-type semiconductor behaviors. Gas sensing characteristics of the $LaFeO_3$ thin films was studied as a function of film thicknesses and heat treatment temperatures. While the variation of the film thickness showed a little effect on the sensitivity, the heat treatment temperature was critical to the sensitivity. The thin films with thickness of 400 nm heat-treated at $800^{\circ}C$ showed the sensitivity of 400% for 5000ppm CO and 60% for 350ppm $NH_3$ at the working temperature of $300^{\circ}C$.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.125-133
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• 1995

The crystal structure of dehydrated, partially Co(II)-exchanged zeolite X, stoichiometry Co2+Na+-X (Co41+Na10Si100Al92O384) per unit cell, has been determined from three-dimensional X-ray diffraction data gathered by counter methods. The structure was solved and refined in the cubic space group Fd3:α=24.544(1)Å at 21(1)℃. The crystal was prepared by ion exchange in a flowing stream using a solution 0.025 M each in Co(NO3)2 and Co(O2CCH3)2. The crystal was then dehydrated at 380℃ and 2×10-6 Torr for two days. The structure was refined to the final error indices, R1=0.059 and R2=0.046 with 211 reflections for which I > 3σ(I). Co2+ ions and Na+ ions are located at the four different crystallographic sites. Co2+ ions are located at two different sites of high occupancies. Sixteen Co2+ ions are located at the center of the double six-ring (site I; Co-O = 2.21(1)Å, O-Co-O = 90.0(4)°) and twenty-five Co2+ ions are located at site II in the supercage. Twenty-five Co2+ ions are recessed 0.09Å into the supercage from its three oxygen plane (Co-O = 2.05(1)Å, O-Co-O = 119.8(7)°). Na+ ions are located at two different sites of occupandies. Seven Na+ ions are located at site II in the supercage (Na-O = 2.29(1)Å, O-Na-O = 102(1)°). Three Na+ ions are statistically distribyted over site III, a 48-fold equipoint in the supercages on twofold axes (Na-O = 2.59(10)Å, O-Na-O = 69.0(3)°). Seven Na+ ions are recessed 1.02Å into the supercage from the three oxygen plane. It appears that Co2+ ions prefer sites I and II in order, and that Na+ ions occupy the remaining sites, II and III.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.18-21
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• 2007

Highly textured MgO template by ion-beam-assisted deposition(IBAD) was successfully fabricated using a continuous reel-to-reel(R2R) mode. To enlarge the deposition area, the previous IBAD system was modified into the system with 14-pass and five heating zone. Every processing step was carried out using this multi-turn IBAD system. The overall process consists of R2R electropolishing of a hastelloy C276 tape, deposition of $Al_2O_3$ diffusion barrier, $Y_2O_3$ seed layer, IBAD-MgO and homoepi-MgO layer. The IBAD-MgO templates were fabricated using the IBAD system with 216 cm-length deposition zone and 32 cm diameter ion source. The texture of MgO films developed during the IBAD process was monitored by in-situ reflection high energy electron diffraction(RHEED) to optimize the IBAD process. Recently, 100 m long IBAD-MgO tape with in-plane texture of $\Delta{\phi}<10^{\circ}$ was successfully fabricated using the modified IBAD system. In this report, the detailed deposition condition of getting a long length IBAD-MgO template with a good epitaxy is described.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.256-256
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• 2010

투명전극부터 디스플레이 산업에 이르기까지 광범위하게 응용되어지고 있고 개발되어지고 있는 투명전도산화물(TCO)은 ZnO, In2O3, SnO2 등을 기본으로 하는 n-type 재료가 대부분이다. 그러나 투명전도 산화물을 이용한 light emitting diode(LED), 투명한 태양전지, p-형 TFT와 같은 투명전자소자의 개발을 위해서는 p-type 소재가 필수적이다. p-type TCO 소재는 비교적 연구 개발 실적이 매우 부진한 실정이었다. 1997년 넓은 밴드갭을 가지는 ABO2(delafossite) 산화물이 p-type으로서 안정적이라는 것을 보고함에 따라 이에 대한 연구가 활발히 진행되고 있다. 현재 ABO2 형태를 가진 Delafossite구조 산화물이 가장 유망한 p-type 투명전도체 소재로 거론되고 있다. Delafossite 구조가 p-type 투명전도체에 적합한 결정구조인 이유는 밴드갭이 넓고 공유결합에 유리하기 때문이다. Delafossite구조는 상온에서 2종류의 polytype(상온에서 Rhombohedaral구조와 hexagonal 구조)이 존재하며 이들은 각각 3R 및 2H의 결정 구조를 가지고 있다. ABO2의 delafossite구조에서 Cu+의 배열은 c-축을 따라 Cu-O-Cr-O-Cu의 연속적인 층 구조로서 2차원연결로 보여 진다. 보고된 Cu- base delafossite구조를 가지는 재료들은 CuAlO2, CuGaO2, CuInO2 등 여러가지가 있다. 본 연구에서는 PLD를 이용하여 c-plane 사파이어 기판위에 성장된 delafossite구조인 CuCrO2박막의 특성을 알아보았다. p-type 특성을 위하여 CuCrO2에 Zn를 첨가하였으며 그에 따른 구조적 전기적 특성을 조사하였다. 성장온도와 산소분압을 $500{\sim}700^{\circ}C$, 0~10mTorr로 변화시켜 특성을 연구하였다. 성장온도 $700^{\circ}C$, 산소분압 10mTorr에서 c-plane 사파이어 기판위에 c-축 배향의 에피성장된 CuCrO2:Zn 박막을 얻을 수 있었다. Mg를 도핑함에 따른 p-type 특성보다 현저히 떨어지는 것을 확인하였다. 또한 동일한 조건임에도 특정한 이차상의 존재를 통해 도핑된 Zn의 위치를 추측할 수 있었다. 온도와 분압에 따른 결정성과 표면상태를 SEM을 통해서 확인하였다.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.499-509
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• 1993

Structures of hematite(${\alpha}$-Fe2O3), Ba-ferrite(BaFe12O19) and Zn2Y(Ba2Zn2Fe12O22) were studied by powder X-ray diffraction(XRD) method. Powder XRD patterns of the ferrites were analyzed with the Rietveld method, and the final refined R-factors were RWP<0.01 and RI<0.03. The lattice parameters refined with hexagonal crystal system were a=5.0342${\AA}$, c=13.746${\AA}$ for hematite, a=5.8928${\AA}$, c=23.201${\AA}$ for Ba-ferrite, and a=5.8763${\AA}$, c=43.567${\AA}$ for Zn2Y. In the hematite, the oxygen parameter is 0.3072 and the Fe-O distances in FeO6octahedron are 1.941${\AA}$ and 2.118${\AA}$, close to the single crystal data of Blake et al.. In the Ba-ferrite, the Fe atom in oxygen trigonal bipyramid is displaced 0.155${\AA}$ away from the BaO3 mirror plane into 4e position. In the Zn2Y, 75% of Zn is located at the oxygen terahedral site in S-block.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1095-1099
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• 1998

The crystal structure of an acetylene sorption complex of dehydrated fully Mn(Ⅱ)-exchanged zeolite X, Mn46Si100Al92O384·30C2H2 (a=24.705(3) Å) has been determined by single-crystal X-ray diffraction techniques. The structure was solved and refined in the cubic space group Fd3 at 21(l) ℃. The complex was prepared by dehydration at 380 ℃ and 2 x 10-6 Torr for 2 days, followed by exposure to 300 Torr of acetylene gas for 2 h at 24 ℃. The structure was refined to the final error indices, R1=0.060 and R2=0.054 with 383 reflections for which I > 3σ(Ⅰ). In the structure, Mn2+ ions are located at two different crystallographic sites; sixteen Mn2+ ions at site I are located at the centers of the double six rings and thirty Mn2+ ions are found at site Ⅱ in the supercage, respectively. Each of these latter Mn2+ ions is recessed ca. 0.385(2) Å into the supercage from its three-oxygen plane. Thirty acetylene molecules are sorbed per unit cell. Each Mn2+ ion at site Ⅱ lies on a threefold axis in the supercage of the unit cell, close to three equivalent trigonally arranged zeolite framework oxygen atoms (Mn(Ⅱ)-O=2.135(9) Å) and symmetrically to both carbon atoms of a C2H2 molecules. At these latter distances, the Mn(Ⅱ)-C interactions are weak (Mn(Ⅱ)-C=2.70(5) Å), probably resulting from electrostatic attractions between the divalent cations and the polarizable π-electron density of the acetylene molecules.