• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.701-702
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.241-244
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• 2003

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.327-329
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• 2009

A first short stoke current which has a 10/350 ${\mu}s$ waveform is able to be generated by using the crowbar switch in R-L-C circuit. In this paper, a peaking circuit has been applied to make crowbar switch. Operate effective for generating 10/350 ${\mu}s$ waveform. According to simulation with PSpice, we have found that some value of inductance were more effective to trigger a crowbar switch. As a result of experimental test using crowbar switch with peaking circuit, the success rate of triggering crowbar switch is higher than the normal crowbar switch without peaking circuit.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.14 no.2
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• pp.89-95
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• 1978

A SCR static breaker was studied on the Resistive and inductive load, then on the overload break circuit using operational Amplifier. In this paper, the principal circuit required for forced commutation was voltage commutation by the introduction of a parallel Capacitor. The results obtained are follows; 1. In thecondition that the tima constant of R-C circuit is larger than the turn off time of SCR, the breaker has low transient phenomena and no recovery vol age. 2. By using OP Amplifier on the load circuit, overcurrent trip point will be able to adjust to the wide range of over current. 3. In the over current qrcuit, the power loss was reduced remarkably.

• Investigative Magnetic Resonance Imaging
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• v.13 no.1
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• pp.15-21
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• 2009

Purpose : A method to estimate a real k-space trajectory based on a circuit model of the gradient system is proposed for spiral imaging. The estimated k-space trajectory instead of the ideal trajectory is used in the reconstruction to improve the image quality in the spiral imaging. Materials and Methods : Since the gradient system has self resistance, capacitance, and inductance, as well as the mutual inductance between the magnet and the gradient coils, the generated gradient fields have delays and transient responses compared to the input waveform to the gradient system. The real gradient fields and their trajectory in k-space play an important role in the reconstruction. In this paper, the gradient system is modeled with R-L-C circuits, and real gradient fields are estimated from the input to the model. An experimental method to determine the model parameters (R, L, C values) is also suggested from the quality of the reconstructed image. Results : The gradient fields are estimated from the circuit model of the gradient system at 1.5 Tesla MRI system. The spiral trajectory obtained by the integration of the estimated gradient fields is used for the reconstruction. From experiments, the reconstructed images using the estimated trajectory show improved uniformity, reduced overshoots near the edges, and enhanced resolutions compared to those using the ideal trajectory without model. Conclusion : The gradient system was successfully modeled by the R-L-C circuits. Much improved reconstruction was achieved in the spiral imaging using the trajectory estimated by the proposed model.

• International Journal of Air-Conditioning and Refrigeration
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• v.6
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• pp.148-157
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• 1998

This study presents test results of a residential window air-conditioner using R22 and two potential alternative refrigerants, R407C and R410B. A series of performance tests has been carried out for the basic and liquid-suction heat exchange cycles in a psychometric calorimeter test facility. For R407C, the same rotary compressor was used as in the R22 system. However, compressor for the R410B system was modified to provide the similar cooling capacity. The evaporator circuit was changed to get a counter-cross flow heat exchanger to take advantage of zeotropic mixture's temperature glide, and liquid-suction heat exchange cycle was also considered to improve the system performance. Test results were compared with those for the basic R22 system. The modified system with a liquid-suction heat exchanger increased cooling capacity and energy efficiency by up to 5%.

• ETRI Journal
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• v.30 no.6
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• pp.826-832
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• 2008

The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.632-635
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• 2004

The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver-based contact materials to be used in low voltage circuit breakers. The opening velocity during breaking, which is constant, ranges between 2m/s to 6m/s in the 415V $25kA_{rms}$. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that the increase in opening velocity from 2m/s to 6m/s leads to a decrease in the contact erosion. It is shown that the material transfer from one electrode to another depends on the transfer charge and the opening velocity of the contacts. The contact pairs of AgWC/AgCdO are superior to $AgWC/AgSnO_2In_2O_3$ or AgWC/AgC contact pairs in the contact erosion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.103-106
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• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.