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Development of OCB mode with impulsive driving scheme for improving moving picture quality

  • Kim, J.L.;Lee, C.H.;Park, S.Y.;Yoo, S.W.;Oh, J.H.;Lee, S.H.;Chai, C.C.;Park, C.W.;Ban, B.S.;Ahn, S.H.;Hong, M.P.;Chung, K.H.;Lim, S.K.;Kim, K.H.;Souk, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1049-1052
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    • 2004
  • In general, contrary to the CRTs with impulsive emission, liquid crystal displays have motion artifacts such as blurring. ghost image, decrease of dynamic CR(contrast ratio), and stroboscopic motion due to hold type driving method. In this paper, to improve motion picture quality of LCDs. impulsive driving method of black data insertion was applied to the OCB mode which is well known for its fast LC response time and wide viewing angle properties. Subject evaluation was carried out with CRT, TN, SIPS(Super IPS). and impulsive driving OCB. Moving picture image quality near CRT was obtained in impulsive OCB driving mode

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a-Si TFT Integrated Gate Driver Using Multi-thread Driving

  • Jang, Yong-Ho;Yoon, Soo-Young;Park, Kwon-Shik;Kim, Hae-Yeol;Kim, Binn;Chun, Min-Doo;Cho, Hyung-Nyuck;Choi, Seung-Chan;Moon, Tae-Woong;Ryoo, Chang-Il;Cho, Nam-Wook;Jo, Sung-Hak;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1251-1254
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    • 2006
  • A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

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a-Si TFT Integrated Gate Driver Using Multi-thread Driving

  • Jang, Yong-Ho;Yoon, Soo-Young;Park, Kwon-Shik;Kim, Hae-Yeol;Kim, Binn;Chun, Min-Doo;Cho, Hyung-Nyuck;Choi, Seung-Chan;Moon, Tae-Woong;Ryoo, Chang-Il;Cho, Nam-Wook;Jo, Sung-Hak;Kim, Chang-Dong;Chung, In-Jae
    • Journal of Information Display
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    • v.7 no.3
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    • pp.5-8
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    • 2006
  • A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two modes, "wake" and "sleep". The degradation of the circuit is retarded because the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

N-4-Substituted-benzyl-N'-tert-butylbenzyl Thioureas as Vanilloid Receptor Ligands: Investigation on the Role of Methanesulfonamido group in Antagonistic Activity

  • Park, Hyeung-Geun;Choi, Je-Yeon;Choi, Sea-Hoon;Park, Mi-Kyung;Lee, Ji-Hye;Suh, Young-Ger;Cho, Ha-Won;Oh, Uh-Taek;Lee, Ji-Youn;Kang, Sang-Uk;Lee, Jee-Woo;Kim, Hee-Doo;Park, Young-Ho;Jeong, Yeon-Su;Choi, Jin-Kyu;Jew, Sang-Sup
    • Proceedings of the PSK Conference
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    • 2003.10b
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    • pp.173.2-173.2
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    • 2003
  • Vanilloid receptor I (VR1) is a nonselective cation ion channel placed in the plasma membrane of peripheral sensory neurons that is potential target for analgesia A series of N-4-substituted-benzyl-N'-tert-butylbenzyl thioureas were prepared for the study of their agonistic/antagonistic activities to the vanilloid receptor in rat DRG. Their structure-activity relationship in reveals that not only the two oxygens and amide hydrogen of sulfonamido group but also the optimal size of methyl in methanesulfonamido group play an integral role for the antagonistic activity on vanilloid receptor.

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Fabrication of CNT Electron Source for Field Emission Displays

  • Nakata, S.;Sawada, T.;Fujikawa, M.;Nishimura, K.;Abe, F.;Hosono, A.;Watanabe, S.;Yamamuro, T.;Shen, Z.;Suzuki, Y.;Okuda, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1012-1015
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    • 2005
  • We have developed the technique of fabricating triode structure with simple stacking method using a polymer insulator that is suitable for large panel and the activation method after the fabrication. By the techniques, a test panel was manufactured and proves good emission property and uniformity.

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Development of World's Largest 21.3' LTPS LCD Using Sequential Lateral Solidification (SLS) Technology

  • Kang, Myung-Koo;Kim, H.J.;Chung, J.K.;Kim, D.B.;Lee, S.K.;Kim, C.H.;Chung, W.S.;Hwang, J.W.;Joo, S.Y.;Maeng, H.S.;Song, S.C.;Kim, C.W.;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.241-244
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

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4.1” Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-IGZO Thin-film Transistors

  • Jeong, J.K.;Kim, M.;Jeong, J.H.;Lee, H.J.;Ahn, T.K.;Shin, H.S.;Kang, K.Y.;Park, J.S.;Yang, H,;Chung, H.J.;Mo, Y.G.;Kim, H.D.;Seo, H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.145-148
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    • 2007
  • The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

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32'-diagonal Gated CNT Cathode

  • Lee, Chun-Gyoo;Lee, Sang-Jo;Lee, Sang-Jin;Chi, Eung-Joon;Lee, Jin-Seok;Yun, Tae-Il;Lee, Byung-Gon;Han, Ho-Su;Ahn, Sang-Hyuck;Jung, Kyu-Won;Kim, Hun-Yeong;Yun, Bok-Chun;Park, Sung-Man;Choi, Jong-Sik;Oh, Tae-Sik;Kang, Sung-Kee;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.303-304
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    • 2002
  • 32"-diagonal gated carbon nanotube(CNT) cathodes named under-gate cathodes for large-size display applications have been fabricated and characterized. The emission uniformity looks fine, even without the resistive layer. The emission performance has been improved by scaling down the cathode electrode dimension.

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Auto-patterned Ag signal line by solution-processed printing on zone-defined surface.

  • Kim, Jae-Hyun;Lee, Bo-Hyun;Moon, Tae-Tyoung;Park, Mi-Kyung;Chae, Gee-Sung;Kang, In-Byeong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1774-1777
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    • 2007
  • Ultra-fine Ag line was automatically patterned to the extent of 10 ${\mu}m$ in width by slit coating on the $10^4$ $mm^2$ glass, which was pre-patterned as hydrophobic and hydrophilic zone by using hydrophobic material. The resistivity of Ag film was about $4{\mu}\;{\Omega}{\cdot}cm$.

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