• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.136-136
• /
• 2009

It is investigated the cut-off frequency of Z-cut quartz microstrip low pass filter by the variation of applied electric field. Designed microstrip filter was simulated using the Ensemble v7.0(Ansoft). As a result of the experiment, the cut-off frequency showed 50 MHz shift when the applied electric field was 3 kV/cm.

• Proceedings of the KSME Conference
• /
• 2003.04a
• /
• pp.1069-1072
• /
• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.116-120
• /
• 2004

In this paper, we proposed a method to shift the resonant frequency by applying the electric field to microstrip patch antenna using piezoelectric substrates. We fabricated microstrip patch antenna using Y-cut LiNbO3, Quartz and FR-4 substrates. We designed and simulated the microstrip antennas by Ensemble V 7.0 of the simulation too1. We observed the resonant frequency by DC applied electric field in a microstrip patch antenna. When the electric field was 300 V/mm, the resonant frequency agile of Y-cut LiNbO3 microstrip patch antennas were 29 MHz. When the electric field was 400 V/mm, the frequency agile of X-cut, Y-cut and Z-cut quartz microstrip patch antennas were 55.2 MHz, 34.2 MHz and 28.0 MHz, respectively. However, when the electric field was 400 V/mm, the resonant frequency of FR-4 microstrip patch antenna does not changed. It was shown that the resonant frequency agile of Y-cut and Z-cut quartz microstrip patch antennas are due to piezoelectric phenomenon not to be permittivity.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1103-1107
• /
• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Bulletin of the Korean Chemical Society
• /
• v.17 no.1
• /
• pp.39-42
• /
• 1996

A new oscillator for electrochemical quartz crystal microbalance (EQCM) was developed by using an operational amplifier without any LC component. The home-made EQCM using this oscillator showed only 0.02 Hz frequency noise at 0.3 s gate time when a 6 MHz AT-cut crystal was used. Pb underpotential deposition on gold substrate in nitric acid media was examined to demonstrate the performance of this EQCM. The derivative of frequency change could be obtained without averaging multiple scans.

• ETRI Journal
• /
• v.33 no.5
• /
• pp.802-805
• /
• 2011

This letter presents a K-band polarization reconfigurable antenna integrated with a silicon radio frequency MEMS switch into the form of a compact package. The proposed antenna can change its state from linear polarization (LP) to circular polarization (CP) by actuating the MEMS switch, which controls the configuration of the coupling ring slot. Low-loss quartz is used for a radiating patch substrate and at the same time for a packaging lid by stacking it onto the MEMS substrate, which can increase the system integrity. The fabricated antenna shows broadband impedance matching and exhibits high axial ratios better than 15 dB in the LP and small axial ratios in the CP, with a minimum value of 0.002 dB at 20.8 GHz in the K-band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.9
• /
• pp.546-551
• /
• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.11
• /
• pp.1227-1232
• /
• 1998

The frequency response on the tip-sample distance in scanning electrochemical microscopy (SECM) that is combined with an electrochemical quartz crystal microbalance (EQCM) is described. The oscillation frequency of the EQCM increases rapidly when the SECM tip is very close to the substrate electrode surface. This frequency increase is reproducible regardless of the current feedback in SECM, which is attributed to the stress caused by the tip pressing the quartz crystal. It is useful to calibrate the tip-sample distance with respect to the frequency change when a combined system of SECM and EQCM (SECM-EQCM) is used. This method could be applied to several cases such as rigid metal electrode and non-conducting or partially conducting polymer coating prepared on the quartz crystal regardless of the feedback current.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1511_1512
• /
• 2009

This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.

• ETRI Journal
• /
• v.19 no.1
• /
• pp.26-35
• /
• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.