• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.286-289
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• 2003

We investigated the influence of the properties of substrate material on the separation efficiency in microchip electrophoresis. We fabricated the various microchips and studied separation efficiency in microchannels composed of a single material such as quartz, glass, polydimethylsiloxane (PDMS), and polymethylmetha crylate (PMMA), as well as hybrid micro channels composed of different materials. New fabrication process for glass chip was suggested and some treatment is added to improve fabrication process in other chip. Separation efficiency was compared by measuring migration times and bandwidths of EOF and analytes in each microchip. The efficiency is the function of migration time, which is affected by the electroosmotic flow (EOF), and bandwidth of an analyte. EOF is highly dependent upon the characteristics of a microchannel wall surface. Migration time was more reproducible in silica chips than that of PDMS chip and more band broadening was observed in the microchip composed of hybrid material due to non-uniformity of surface charge density at the walls of the channel.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1280-1283
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• 2005

A novel zinc complex, Zn(phen)q, was synthesized from 1,10-phenanthroline (phen) and 8-hydroxyquinoline (q) as organic ligands and its electroluminescent (EL) properties were characterized. The structure of Zn(phen)q was elucidated by FT-IR, UV-Vis and XPS. The complex Zn(phen)q showed thermal stability up to $300^{\circ}C$ under nitrogen flow, which was measured by TGA and DSC. The photoluminescence (PL) of the Zn(phen)q was measured from the THF solution and the solid film on quartz substrate. The PL emission of Zn(phen)q exhibited green light centered at about 505nm. The EL devices were fabricated by the vacuum deposition. The EL devices having the structure of ITO/a-NPD/Zn(phen)q/Li:Al were studied, where 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(a-NPD) used as a hole transport layer(HTL). a-NPD has high Tg of $96^{\circ}C$ and thus makes the device thermally stable. The EL emission of Zn(phen)q exhibited also green light centered at 532nm.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.497-502
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• 2005

This study investigated the effects of the substrate and powder content on the fabrication of SiO$_{2}$ photonic crystals by evaporation method. Photonic crystals were self-assembled on quartz, Corning 1737 glass, slide glass, and ITa glass to verify the effects of the wetting angle and surface morphology. The powder contents of the solution were varied from 0.2 to 2.0 wt$\%$. The number of photonic crystal layers increased according to the decrease of wetting angle and surface roughness. The resultant photonic crystals showed the best optical characteristics when the number of photonic crystal layers was within 40 and 50. In addition, the intensity peak of Fabry¡?Perot fringes increased when the wetting angle was large and the particle size was small. Photonic crystals coated on ITO glass showed the highest reflectance peak of 63$\%$ relative intensity.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.70-73
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• 2003

Sum-frequency vibrational spectroscopy has recently been used to investigate the surface of the various polymers and was able to find the chemical compositions and structures specific to the surface. Here we report our studies on two specific polymer samples to demonstrate its capability. Polyimide thin films were made by spin coating on fused quartz and $CaF_2$ substrates. The sum-frequency signal originating mainly from the air/polymer interface showed markedly different spectra, indicating the structural change of the polymer surface depending on the underlying substrate. Various polyethylene surfaces were also investigated by sum-frequency vibrational spectroscopy. The surface of polyethylene samples in the CH-region showed different sum-frequency spectra, presumably due to the trace amount of additives having much higher concentration at the air/polymer interface. These examples demonstrate the surface and interface of the polymer could have different structure and chemical composition from those of a bulk, which can be studied effectively by surface nonlinear optical spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.114-114
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• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1657-1659
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• 1997

Electron temperature and electron density were measured in a radio-frequency inductively coupled plasma (RFICP) using a probe measurements. Measurement was conducted in an argon discharge for pressures from 10 [mTorr] to 40 [mTorr] and input rf power from 100 [W] to 800 [W], Ar flow rate from 5 [sccm] to 30 [sccm], Spatial distribution electron temperature and electron density were measured for discharge with same aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power, Ar flow rate. Electron density was increased with increasing input power and in creasing pressure, increasing Ar flow rate. Radial distribution of the electron density was peaked in the plasma center. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. From these results, We found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.