• Title/Summary/Keyword: Quarter wavelength cavity

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Modeling and simulation on an IR absorbing structure with the cascaded transmission line model (전송선 이론에 의한 적외선 흡수 구조체의 흡수율 모의시험)

  • Park, Seung-Man
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.12
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    • pp.1725-1729
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    • 2013
  • In this paper, the modeling and simulation of infrared absorption in an infrared absorbing structure with the cascaded transmission line model were carried out. Each layer in the infrared absorbing structure can be modeled as a characteristic impedance of the cascaded transmission line model. The simulation results show that the cavity thickness to get a maximum absorption should be less than a quarter wavelength, which is somewhat different from prevalent thickness. It can be assured that the sheet resistance of an absorbing layer to get a maximum absorption is $377{\Omega}/{\square}$, that the thickness of the absorbing layer dose not affect the spectral characteristics of absorption. It is also shown that the thickness of the active layer is not critical to the IR absorption. It can also be assured that the validation of this modeling is proved in comparison with the previous results from similar absorbing structures.

A Coaxial Band Rejection Filter using a Quarter Wavelength Choke Structure (4분의 1 파장 초크 구조를 이용한 동축형 대역억제필터)

  • Han, Dae Hyun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.3
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    • pp.313-318
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    • 2018
  • A coaxial band rejection filter is designed and fabricated for a beam interacting cavity. The proposed filter has a quarter wavelength choke for the dominant mode of the cavity. The equivalent circuit of the coaxial band rejection filter is presented and the ABCD parameter os each part is derived to obtain the ABCD parameter of the entire filter. The scattering matrix was obtained from the ABCD matrix and the was simulated by MATLAB using the obtained scattering matrix. The coaxial band rejection filter structure was simulated using HFSS, and the results confirmed the simulation using the equivalent circuit was useful. The designed coaxial band rejection filter was fabricated with 6-1/8 flange. The fabricated filter was measured using a transition from 6-1/8 flange to N-type flange. The insertion loss of the fabricated filter is greater than 25 dB in the dominant mode of the cavity and less than 0.25 dB in the first higher order mode. The measurement results are in good agreement with the simulated results and meet the design specification.

Design of Scan-Capable Fabry Perot Cavity Antenna Using Artificial Magnetic Conductors (인공 자기 도체를 이용한 스캔 가능한 패브리 패롯 공진기형 안테나 설계)

  • Kim, Myong-Gyun;Kim, Jong-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.9
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    • pp.1025-1033
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    • 2012
  • Fabry-Perot cavity(FPC) antennas with artificial magnetic conductor(AMC) surface are designed in order to provide scan capability by $4{\times}1$ array feed inside the cavity. The proposed antenna, excited by $4{\times}1$ thinned array, not only achieve higher directivities but also improve suppression of sidelobe level(SLL) relative to that of the thin array alone. The FPC antenna with the height of a quarter wavelength generate maximum gain of 19 dB, SLL suppression of 14 dB and maximum scan angle of $8^{\circ}$ under the feed phase difference of $90^{\circ}$ at the design frequency of 12 GHz.

Optical Properties of Vertical Cavity Laser - Depleted Optical Thyristor for Low Threshold Current (낮은 문턱 전류를 위한 Vertical Cavity Laser - Depleted Optical Thyristor 의 레이징 특성에 관한 연구)

  • Choi Woon-Kyung;Choi Young-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.7 s.349
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    • pp.1-6
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    • 2006
  • We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

The Effect of Laser Geometry and Material Parameters on the Single Mode Gain Difference in Quarter Wavelength Shifted DFB Laser above Threshold Current (문턱전류이상에서 구조 및 재료 변수들이 $\lambda$/4위상천이 DFB 레이저의 단일모드 이득차에 미치는 영향)

  • 이홍석;김홍국;김부균;이병호
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.75-84
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    • 1999
  • Systematic studies for the effect of the linewidth enhancement factor, the confinement factor, the internal loss and the cavity length on the single mode gain difference and the frequency detuning are performed for $\lambda$/4 phase shifted DFB lasers above threshold. The above threshold characteristics are mainly determined by the linewidth enhancement factor, not by the confinement factor or the parameter defined by the product of the linewidth enhancement factor and the confinement factor. The normalized internal loss defined by the product of the internal loss and the cavity length mainly determines the above threshold characteristics compared to that of the internal loss or the cavity length alone. The effect of the cavity length on threshold characteristics is larger than that of the internal loss in the case of the same normalized internal loss. The above threshold characteristics of quantum well lasers are more resistant to the variations of the confinement factor and the normalized internal loss than those of bulk lasers due to the small linewidth enhancement factor.

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