• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.8-14
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• 2000

This paper analyzes and accesses the gain of optically pumped surface-normal MQW optical amplifiers. The proposed amplifiers have the advantage of polarization independence, high coupling efficiency to and from optical fibers, and flexibility of operating wavelength. We analyzed the gain characteristics of 100 - 200-period MQWs and verified the dependence of a strained lattice and selective doping. Theoretical analysis of such MQWs showsa single-pass gain of 3 dB with broad operation bandwidth. A single-pass gain of 2.6 dB is obtained experimentally in an InGaAs/InGaAlAs MQW amplifier, which is compared with calculations. The use of Fabry-Perot interferometer (FPI) structure in an optical amplifier is a useful way to increase the gain, but causes a problem of narrow operation bandwidth when the single-pass gain is low. Therefore, a single-pass gain above 2to 3 dB is a prerequisite to achieve both a high gain and moderate operation bandwidth in FPI-structured opticalamplifiers. We have designed an FPI-structured surface-normal optical amplifier both with a high gain of broad operation bandwidth of 4.6mm, when a single-pass gain is 3 dB.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.400-405
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• 2000

We investigated the effect of TMIn (trimethly-indium) source depletion on InGaAs, InGaAsP and 1.55 $\mu\textrm{m}$ InGaAs/InGaAsP SMQW by using EPISON ultrasonic monitor for measuring the concentration of metalorganic/carrier gas mixtures. And the problems for the growth reproducibility in MOCVD was solved by using an EPISON ultrasonic monitor with closed-loop mode under the condition of TMIn source depletion. The saturation pressure of TMIn was dramatically decreased over consumption of 80%. In the case of bulk epilayer, Up-shifting of 300 arcsec to Ga-rich direction and FWHM broadening by a factor of two in DCXRD spectrum were observed due to the TMIn source depletion. In the case of SMQW, Up-shifting of 300 arcsec to Ga-rich direction in DCXRD spectrum and blue-shift of 40 nm in PL spectrum were observed due to the TMIn source depletion. However, good reproducibility ($\Delta\theta$<$\pm$100 arcsec) was achieved even the condition of 95% of TMIn consumption, when we used the EPISON with closed-loop mode.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.110-110
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• 1998

GaN는 직접천이형 에너지 캡을 가지며 In과 화합물을 형성할 경우 1.geV-3.4eV까지 다양한 에너지 캡을 가지므로 청색 발광소자 고출력소자 고온 전자소자둥 웅용성이 많 은 물절로서 각광을 받고 있다. 그러나 G랴‘에 적합한 기판이 없다는 문제점으로 인하여 F FET, LD와 같은 다양한 구조의 웅용에 제 약이 따랐다. 이에 본 연구에서는 RF(radio frequency) Plasma-Assisted MBE( molecular beam e epitaxy )를 이용하여 InxGaj xN/G암J 양자우물 구조를 성장하였다. 이렇게 성장된 I InxGaj xN 박막과 InxGaj xN/GaN 양자우물구조의 특성의 분석은 광학적 특성올 PL( p photoluminescence ) , 결 정 성 의 분석 은 XRD ( x-ray diffraction ), 표면 과 단변 의 계 변 특성은 SEM(scanning electron microscopy)을 이용하여 분석하였다. 저온 PL의 측정결 과 기판온도를 680$^{\circ}$C로 고정한 후 In cell의 온도를 650$^{\circ}$C에서 775$^{\circ}$C까지 증가함에 따라 I InxGaj xN에 관계된 피크위치가 약3이neV정도 red shift 함을 관찰할 수 있었다. 한편 I InxGaj xN/GaN 양자우물구조의 경우 PL피크가 3.2없eV로써 InxGaj- xN의 PL 피크에 비 해 에서 약 25me V 고에너지 이동이 관측되었으며 이것은 우불 내에서 에너지레벨의 c confinement효과에 의해 에너지의 변화에 의한 것엄올 확인하였으며, 양자우물 구조에서 우물의 두께를 줄임에 따라 변화 폭은 1이neV정도 고에너지 이동을 관찰할 수 있었다. X XRD 측정의 결과 In의 mole fraction에 따라 격자상수의 변화를 관찰하였으며, 결정 성의 변화를 피크의 세기로 관찰하였다 .. XRD로 판단한 In의 mole fraction은 0.2임을 알 았다 .. SEM 측정은 표변과 단면의 측정으로서 표연특성과 단면의 특성을 InxGaj xN, I InxGaj xN/GaN 양자우물 구조 모두 알아보았다. 측정 결과 InxGaj-xN의 성 장조건으로 기판온도가 낮아지면서 표면의 거칠기 정도가 증가하였으며,680$^{\circ}$C의 기판온도에서 성장 한 양자우물 구조에 있어서 매끄라운 표면올 얻올 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.441-441
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• 2011

$TiO_2$ nanoparticles were grown on carbon fiber by atomic later deposition (ALD) with TTIP $(Ti(OCH(CH_3)_2)_4$ and $H_2O$ precusors. After sampe surfaces were treated by electron beam (1 MeV, 5 KGy), an improvement in the photocatalytic reacitivity of $TiO_2$ nanoparticles on carbon fiber was observed. An increase in the population of hydroxyl group on $TiO_2$ particles and the oxidation of carbon fiber were found upon e-beam exposure, whereas there was no noticeable changes of their morphology. It implies that those changes in O and C 1s state of $TiO_2$ particles/carbon fiber induced by e-beam treatment could be related to the enhancement of the photocatalytic activity. In contrast, when carbon fiber fully covered with $TiO_2$ thick films was treated with high-energy electron beam under same conditions, the improvement of photocatalytic activity as well as any changes in XPS spectra (Ti 2p, O 1s and C 1s) could not be found.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.183-183
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• 2011

Multiferroic materials have been widely studied in recent years, because of their abundant physics and potential applications in the sensors, data storage, and spintronics. $BiFeO_3$ is one of the well-known single-phase multiferroic materials with $ABO_3$ structure and G-type antiferromagnetic behavior below the Neel temperature $T_N$ ~ 643 K, but the ferroelectric behavior below the Curie temperature $T_c$~1,103 K. In this study, the $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramics were prepared by solid-state reaction and rapid sintering with high-purity $Bi_2O_32$, $Fe_3O_4$ and NiO powders. The powders of stoichiometric proportions were mixed, as in the previous investigations, and calcined at 450$^{\circ}C$ for $BiFe_{1-x}Ni_xO_3$ for 24 h. The obtained powders were grinded, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, which has been heated up to 800$^{\circ}C$ and sintered in air for 20 min. The sintered disks were taken out from the oven and cooled to room temperature within several min. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu K${\alpha}$ radiation. The Raman measurements were carried out by employing a hand-made Raman spectrometer with 514.5-nm-excitation $Ar^+$ laser source under air ambient condition on a focused area of 1-${\mu}m$ diameter. The field-dependent magnetization measurements were performed with a superconducting quantum-interference-device magnetometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Horticultural Science & Technology
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• v.35 no.1
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• pp.21-29
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• 2017

This study was conducted to determine the effects of artificial lighting sources on vegetative growth of Phalaenopsis and Doritaenopsis (an intergeneric hybrid of Doritis and Phalaenopsis) orchids. One - month - old plants were cultivated under fluorescent lamps, cool - white light - emitting diodes (LEDs), or warm - white LEDs at 80 and $160{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. The blue (400 - 500 nm) : green (500 - 600 nm) : red (600 - 700 nm) : far - red (700 - 800 nm) ratios of the fluorescent lamps, cool-white LEDs, and warm-white LEDs were 1 : 1.3 : 0.8 : 0.1, 1 : 1.3 : 0.6 : 0.1, and 1 : 2.7 : 2.3 : 0.4, respectively. Each light treatment was maintained for 16 weeks in a closed plant-production system maintained at $28^{\circ}C$ with a 12 h photoperiod. The longest leaf span, as well as the leaf length and width of the uppermost mature leaf, were observed in plants treated with warm-white LEDs. Plants grown under fluorescent lamps had longer and wider leaves with a greater leaf span than plants grown under cool-white LEDs, while the maximum quantum efficiency of photosystem II was higher under cool-white LEDs. The vegetative responses affected by different lighting sources were similar at both 80 and $160{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Leaf span and root biomass were increased by the higher light intensity in both cultivars, while the relative chlorophyll content was decreased. These results indicate that relatively high intensity light can promote vegetative growth of young Phalaenopsis plants, and that warm - white LEDs, which contain a high red-light ratio, are a better lighting source for the growth of these plants than the cool-white LEDs or fluorescent lamps. These results could therefore be useful in the selection of artificial lighting to maximize vegetative growth of Phalaenopsis plants in a closed plant - production system.

• Nuclear Engineering and Technology
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• v.45 no.5
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• pp.683-688
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• 2013

Candidate coating materials for re-usable metallic nuclear fuel crucibles, TaC, TiC, ZrC, $ZrO_2$, and $Y_2O_3$, were plasmasprayed onto a niobium substrate. The microstructure of the plasma-sprayed coatings and thermal cycling behavior were characterized, and U-Zr melt interaction studies were carried out. The TaC and $Y_2O_3$ coating layers had a uniform thickness, and high density with only a few small closed pores showing good consolidation, while the ZrC, TiC, and $ZrO_2$ coatings were not well consolidated with a considerable amount of porosity. Thermal cycling tests showed that the adhesion of the TiC, ZrC, and $ZrO_2$ coating layers with niobium was relatively weak compared to the TaC and $Y_2O_3$ coatings. The TaC and $Y_2O_3$ coatings had better cycling characteristics with no interconnected cracks. In the interaction studies, ZrC and $ZrO_2$ coated rods showed significant degradations after exposure to U-10 wt.% Zr melt at $1600^{\circ}C$ for 15 min., but TaC, TiC, and $Y_2O_3$ coatings showed good compatibility with U-Zr melt.