• Korean Journal of Ecology and Environment
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• v.54 no.2
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• pp.120-124
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• 2021

In order to understand the vegetative role of Glycine soja, we studied the basic physiological characteristics between Glycine soja and Glycine max. For this study, the light intensity (μmol m^-2 s^-1) on leaf surface, leaf temperature (℃), transpiration rate (mmol m^-2 s^-1), photosynthetic rate (μmol m^-2 s^-1), substomatal CO₂ partial pressure (vpm) of Glycine soja and Glycine max were measured, and the quantum yield, photosynthesis rate per substomatal CO₂ partial pressure were calculated. In the results of simple regression analysis, the increasing quantum yield decreases leaf temperature both of Glycine soja and Glycine max and the increasing leaf temperature decreases transpiration rate in case of Glycine soja. However, in case of Glycine max, the increasing leaf temperature decreases substomatal CO₂ partial pressure, photosynthetic rate, and photosynthetic rate per substomatal CO₂ partial pressure as well as transpiration rate. Also, increasing transpiration rate increases substomatal CO₂ partial pressure while decreases photosynthetic rate per substomatal CO₂ partial pressure. Thus, Glycine soja is relatively more easily adaptable to severe environments with low soil nutrients and high light levels. Compared to Glycine max susceptible to water loss due to a water-poor terrestrial habitat, the physiological traits of Glycine soja has a high average transpiration rate and are less susceptible to water loss will act as a factor that limits the habitat according to soil moisture.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.9
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• pp.528-533
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• 2016

One of ways for effectively maintaining asbestos buildings is to select asbestos buildings to be removed firstly by manufacturing and analyzing asbestos map of various topics. Thus, in this study we manufactured asbestos map of various topics for the effective management of asbestos buildings owned by Seoul using QGIS (Quantum Geographic Information System). To select asbestos buildings likely to cause asbestos scattering problem and exposure into the air, we comprehensively took into consideration various topics such as asbestos buildings density, asbestos-area ratio, asbestos buildings distribution considering the population, first removal object, risk assessment, elapsed year. As described in this study, using the GIS may be utilized as a method for selecting asbestos buildings to be removed firstly as well as distribution of asbestos buildings. In the future, it is necessary to make assessment criteria considering diversification of property value in GIS such as the characteristics of the living environment around the asbestos buildings. This is expected to be utilized to manage the vulnerable region to asbestos exposure.

• Journal of the Mineralogical Society of Korea
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• v.27 no.4
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• pp.271-281
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• 2014

The physicochemical properties of clay minerals have been investigated at the atomistic to nano scale. The microscopic studies are often challenging to perform by using experimental approaches alone. In particular, hydroxyl groups of octahedral sheets in 2:1 clay minerals have been hypothesized to impact the sorption process of metal cations; however, X-ray based techniques alone, a common tool for mineral structure examination, cannot properly test the hypothesis. The current study has examined whether computational mineralogy techniques can be applied to examine the hydroxyl structures of clay minerals. Based on quantum-mechanics and molecular-mechanics computational methods, geometry optimizations were carried out for representative dioctahedral and trioctahedral phyllosilicate minerals. Both methods well reproduced the experimental lattice parameters; however, for structural distortion occurring in the tetrahedral or octahedral sheets, molecular mechanics showed significant deviations from experimental data. The orientation angle of the hydroxyl with respect to (001) basal plane is determined by the balance of repulsion between the hydroxyl proton and Si cations of tetrahedral sites; the quantum-mechanics method predicted $25-26^{\circ}$ for the angle, whereas the angle predicted by the molecular-mechanics method was much higher by $10^{\circ}$ (i.e., $35^{\circ}$). These results demonstrate that computational mineralogy techniques are a reliable tool for clay mineral studies and can be used to further elucidate the roles of hydroxyls in metal sorption process.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.12
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• pp.1421-1426
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• 2014

To improve the inherent safety of the sodium-cooled fast reactor (SFR), the supercritical $CO_2$ ($S-CO_2$) Brayton cycle is being considered as an alternative power conversion system to steam the Rankine cycle. In the $S-CO_2$ system, a PCHE (printed circuit heat exchanger) is being considered. In this type of heat exchangers, diffusion bonding is used for joining the thin plates. In this study, the diffusion bonding characteristics of various austenitic alloys were evaluated. The tensile properties were measured at temperatures starting from the room temperature up to $650^{\circ}C$. For the 316H and 347H types of stainless steel, the tensile ductility was well maintained up to $550^{\circ}C$. However, the Incoloy 800HT showed lower strength and ductility at all temperatures. The microstructure near the bond line was examined to understand the reason for the loss of ductility at high temperatures.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1721-1725
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• 2010

This paper reports the fabrication of geometry-controlled carbon microneedles by a backside exposure method and pyrolysis. The SU-8 microneedles are a polymer precursor in a carbonization process, which geometries such as base diameter, spacing, and aspect ratio can be controlled in a photolithography step. Using this fabrication method, highly reproducible carbon microneedles, which have high aspect ratios of more than 10 and very sharp nanotips, can be realized. The quartz surface with carbon microneedles becomes very hydrophilic and its wettability is adjusted by carrying out the silane treatment. In the carbon microneedle array ($3\;{\mu}m{\times}3\;{\mu}m$), the contact angle is extremly enhanced (${\sim}180^{\circ}$); this will be advantageous in developing low-drag microfluidics and labs-on-a-chip as well as in other bio-applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.1036-1043
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• 1993

GaAs/AIGaAs resonant tunneling structures have been grown by atmospheric pressure MOCVD. Resonant tunneling diodes fabricated with the structure grown at 650t showed a high peak-to-valley (P/V) current ratio of 2.35 at room temperature. P/V current ratio increased to 15.3 at 77K. Numerically calculated peak current agrees well with the experimental result. Resonant tunneling diodes with AIGaAs as a barrier and InGaAs as a quantum well and a spacer layer yielded a high P/V current ratio of 4.0 and a peak current density of 8.6KA/c# at room temperature because of increased carrier supply.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.121-124
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• 2006

A novel quantum chemical molecular dynamics program, 'Colors' was developed to simulate the electronic structure of rare earth-doped phosphor materials as well as the destruction processes of MgO protecting layer in plasma display panel (PDP). We have also developed a quantitative prediction method based on Monte Carlo simulation technique to evaluate the electrical conductivity of insulators, semiconductors, and metals as well as the spatial distribution of electron density by Colors code. All these original simulators enable us to study theoretically a variety of materials related to PDP.