• Proceedings of the Optical Society of Korea Conference
• /
• 1995.06a
• /
• pp.127-137
• /
• 1995

Anomalously large real space charge transfer through thick barries in GaAs asymmetric double quantum wells is studied by photoluminesence exitation. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is GaAs/AlAs digital alloy with an equivalent Al concentration of 0.28. These resilts combined with observed x and barrier thickness depence suggest that the spatial fluctuation of the atomic arrangment of Ga and Al in the alloy may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions which takes into account the side fluctuation effects.

• Korean Journal of Materials Research
• /
• v.9 no.1
• /
• pp.42-45
• /
• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.7
• /
• pp.50-55
• /
• 1999

We have fabricated optical waveguide which utilizes intermixing of InGaAs/InGaAsP multi quantum well separate confinement heterostructure. The waveguide was fabricated by reactive ion etching technique using $CH_4/H_2$ gas mixture, and the width and depth of the waveguide ware $5{\mu}m$ and $1.2{\mu}m$, respectively. The propagation loss of the waveguide was measured by Fabry-Perot interference phenomena using tunable laser. For the waveguide after $800^{\circ}C$, 30s heat treatment, the measured loss was 3.76dB/cm and 3.95dB/cm for TE and TM mode, respectively. This value is very small compared to other waveguide made by IFVD technique. Hence, this technique can applied to integration of waveguide and electronic devices.

• Journal of Sensor Science and Technology
• /
• v.29 no.4
• /
• pp.266-269
• /
• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.280-280
• /
• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.444-444
• /
• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.394-394
• /
• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.347-348
• /
• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.9
• /
• pp.1-6
• /
• 2000

Utilizing impurity free vacancy diffusion (IFVD) method, area selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure was done. After this, wavelength division demultiplexing waveguide type photodetectoers was integrated and measured. It showed large blue shift in bandgap due to intermixing of MQW. Photodetectors are based on typical p-i-n structure and devices having large and small bandgap areas line up linearly. Width of waveguide and length of each photodetector are 20 and 250 ${\mu}m$, respectively, TE/TM polarized light from tunable laser was butt-coupled to the photodetector and spectral response was measured. Photodetectors can demultiplexing 1480 and 1550 nm wavelength.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.208-208
• /
• 2013

ZnO는 직접천이형 반도체로 약 3.37 eV의 넓은 에너지 band-gap과 60 meV의 비교적 큰 엑시톤 결합 에너지를 가지고 있다. 또한 단결정 성장 가능과 투명성 등 많은 장점들로 인하여 GaN와 대체할 자외선 또는 청색 발광소자나 ITO를 대체할 투명전극 같은 광범위한 광전소자로 큰 주목을 받으며 연구되어 왔다. 이러한 ZnO는 다양한 물질들의 첨가를 통해 인위적으로 특성변화가 가능한데 Mg, Be, Cd 첨가를 통한 에너지 밴드갭의 확장과 수축, Al 첨가를 통한 전기전도성의 증가 등이 그 예이다. 최근에는 밴드갭 조절을 이용한 ZnO-ZnMgO와 같은 이종접합구조가 광소자 등의 응용을 목적으로 많은 연구가 이루어지고 있다. 더불어 나노선이나 나노막대 같은 1차원 구조를 갖는 ZnO 계열 반도체의 연구는 현재 큰 이슈가 되고 있는 나노 크기의 소자 개발에 매우 큰 적용 가능성을 가지고 있다. 우리는 수열합성법을 이용하여 hexagonal ZnO 나노막대를 성장하고 그 표면에 core-shell 형태의 $ZnO-Zn_{1-x}Mg_xO$ (x=0.084) 양자우물을 원자층증착법으로 증착하였다. 본 연구에서는 만들어진 ZnO 나노막대와 ZnO-ZnMgO 나노막대, core-shell ZnO-ZnMgO 양자우물 sample들의 저온(5 K) Photoluminescence 측정을 통하여 광학적 band 구조를 분석하였다. 실험적으로 의도된 양자우물 두께와 다른 실제 형성된 양자무물의 두께를 알아내기 위하여 2차원 hexagonal 양자우물 band 구조에서 self-consistent nonlinear Poisson-Schr$\"{o}$dinger 방정식 계산과 컴퓨터 시뮬레이션을 이용하였으며, 이 방법으로 계산된 값과 실험값의 비교를 통하여 실제 형성된 양자우물의 두께를 정량적으로 유출할 수 있었다.