• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.134-134
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.186-187
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• 2003

최근 들어 단일 양자점이나 단일 분자에 대한 분광 연구가 매우 관심을 끌고 있는데, 이는 미세구조 물질의 근본 물성을 밝히고자 하는 물리적인 관점뿐만 아니라 이를 실제적으로 이용하려는 실용적인 관점에서도 매우 중요한 주제이기 때문이다. 그러나 단일 양자점이나 단일 분자의 분광을 위해서는 공간적인 분해능이 우수할 뿐만 아니라 그 계에서 나오는 매우 미약한 광 신호를 검출하여야 하는 고도의 기술이 필요하다. (중략)

• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.257-257
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• 2023

• Advances in nano research
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• v.1 no.4
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• pp.203-210
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• 2013

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• Journal of Integrative Natural Science
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• v.8 no.3
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• pp.147-152
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• 2015

Photoluminescent porous silicon (PSi) were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 620 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon nanocrystal in porous silicon. As-prepared PSi was sonicated, fractured, and centrifuged in toluene to obtain photoluminescence silicon quantum dots. BET and BHJ methods were employed to study the specific surface area of as-prepared PSi. Optical characterization of red photoluminescent silicon nanocrystal was investigated by UV-vis and fluorescence spectrometer. Also SEM and TEM images of porous silicon and nanoparticles were investigated.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.330-330
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• 2006

The elaboration of fluorescent submicronic polymer particles exhibiting narrow particle size distribution as well as good photostability is of particular interest in various biomedical applications. In the frame of this work, labeled polystyrene latexes have been synthesized by miniemulsion polymerization using luminescent semiconductor nanoparticles (quantum dots, QD). The influence of incorporation of QDs on the polymerization kinetics as well as on the optical properties of the obtained latexes will be discussed.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.57-61
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• 2008

We investigated the laser pulse-width dependence of dense plasmas confined within the magnetic length of $In_{0.2}Ga_{0.8}As$/GaAs multiple quantum wells under high magnetic fields up to 31 T. To fully fill the Landau levels of effectively zero-dimensional system, we used intense femtosecond (fs) laser pulses to create carrier densities near $10^{13}/cm^2$. The observed photoluminescence showed a characteristic of superfluorescence, above critical magnetic field when being excited by pulses shorter than coherence buildup time.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.128-128
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• 2003

• Ceramist
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• v.21 no.2
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• pp.59-74
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• 2018

Imaging in the Short Wave Infrared (SWIR) provides several advantages over the visible and near-infrared regions: enhanced image resolution in in foggy or dusty environments, deep tissue penetration, surveillance capabilities with eye-safe lasers, assessment of food quality and safety. Commercially available SWIR imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits(ROIC) by indium bump bonding Infrared image sensors made of solution-processed quantum dots have recently emerged as candidates for next-generation SWIR imagers. They combine ease of processing, tunable optoelectronic properties, facile integration with Si-based ROIC and good performance. Here, we review recent research and development trends of various application fields of SWIR image sensors and nano-materials capable of absorption and emission of SWIR band. With SWIR sensible nano-materials, new type of SWIR image sensor can replace current high price SWIR imagers.