• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.3
• /
• pp.228-239
• /
• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.11
• /
• pp.1803-1806
• /
• 2005

Formation of octahedral shaped PbSe quantum dots at higher synthesis temperature is being reported in this paper. The synthesis includes the reaction between lead oleate and trioctylphosphine selenide under inert gas conditions to produce PbSe. TEM, SEM, XRD and EDS were used to characterize the samples. The SEM exhibited the formation of spherical shaped nanocrystals at temperature below 140 ${^{\circ}C}$ and octahedral shaped nanoparticles at higher temperatures. Moreover, the TEM also showed the well resolved (111) lattice fringes proving that the nanocrystals were crystalline in nature. Synthesis of highly pure PbSe nanocrystals was another interesting aspect of this research.

• Journal of the Optical Society of Korea
• /
• v.10 no.2
• /
• pp.86-90
• /
• 2006

The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.493-496
• /
• 2009

We report the EL property of blue and blue-violet emitting materials with anthracene moiety as well as a new core structure containing indenopyrazine. Non-doped device using one of indenopyrazine core derivatives was found to exhibit excellent blue-violet color purity of (0.173, 0.063), and narrow emission band of 42nm FWHM. One of anthracene core derivatives with bulky side group also exhibits excellent color coordinates (0.156, 0.088) and an external quantum efficiency of 7.18%.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.3
• /
• pp.308-313
• /
• 1998

A thermally irreversible photochromic system, 2,3-bis(2,4,5-trimethyl-3-thienyl)maleic anhydride (MTMA), has been studied by semi-empirical molecular orbital methods. There are one pair of stable conformations for the closed-ring form and three pairs for the open-ring form, each pair consisting of two mirror-image conformations. Interconversion between the parallel and anti-parallel conformations of the open-ring form is restricted due to high energy barriers. Only the anti-parallel conformation appears to be responsible for photochromic cyclization. Thermostability of the compound is attributed to an avoided crossing at high energy in the ground states of the isomers, whereas the photoreactivity can be explained by the mutually connected excited singlet (S1) states of the isomers, forming a double well potential with a low energy barrier. The large solvent effects can be partly explained with the low dipole moment of the anti-parallel conformation of MTMA in the S1 state. The large variation of quantum efficiency suggests that excess vibronic energy can be utilized to provide the activation energy for the photochromic reaction.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.16 no.10
• /
• pp.889-894
• /
• 2004

Infrared (IR) detectors are widely used for many applications, such as temperature measurement, intruder and fire detection, robotics and industrial equipment, thermoelstic stress analysis, medical diagnostics, and chemical analysis. Quantum detectors commonly need to be refrigerated below 80 K, and thus a cooling system should be equipped together with the detector system. The cooling load, which should be removed by the cooling system to maintain the nominal operating temperature of the detector, critically depends on the insulation efficiency of the cryochamber housing the detector. Thermal analysis of cryochamber includes the conduction heat transfer through a cold well, the gases conduction and gas outgassing, as well as radiation heat transfer, The transient cooling characteristics of an infrared detector cryochamber are investigated experimentally in the present study. The transient cooling load increases as the gas pressure is increased. Gas pressure becomes significant as the cooling process proceeds. Cool down time is also increased as the gas pressure is increased. It is also found that natural convection effects on cool down time become significant when the gas pressure is increased.

• The Bulletin of The Korean Astronomical Society
• /
• v.37 no.2
• /
• pp.222.2-222.2
• /
• 2012

Camera for QUasars in EArly uNiverse (CQUEAN) is an optical CCD camera attached to the 2.1m Otto Struve telescope at the McDonald Observatory, USA. CCD output signal contains the electrons generated by photoionization of incident light and thermal ionization. Therefore reliable photometric result can be obtained only under the stable condition of CCD thermal properties. We investigated the temperature dependency of the various characteristics of CQUEAN CCD chip, including bias level, dark level, gain, and quantum efficiency (QE), with the CQUEAN observation and calibration data obtained during 2012 May run. We discuss the environmental effects, i.e., ambient temperature, as well as CCD temperature on the stability of its characteristics.

• Korean Journal of Materials Research
• /
• v.24 no.6
• /
• pp.305-309
• /
• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.211-216
• /
• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of Environmental Science International
• /
• v.24 no.12
• /
• pp.1591-1600
• /
• 2015

The response of the freshwater microalga, Chlorella vulgaris, to heavy metal stress was examined based on chlorophyll fluorescence analysis to assess the toxic effects of heavy metals in freshwater ecosystems. When toxic effects were analyzed using regular chlorophyll fluorescence analysis, photosystem II activity($F_v/F_m$) decreased significantly when exposed to $Cu^{2+}$ and $Hg^{2+}$ for 12 h, and decreased in the order of $Hg^{2+}>Cu^{2+}>Cd^{2+}>Ni^{2+}$ when exposed for 24h. The effective photochemical quantum yield(${\phi}{\prime}_{PSII}$), chlorophyll fluorescence decrease ratio($R_{Fd}$), minimal fluorescence yield($F_o$), and non-photochemical quenching(NPQ), but not photochemical quenching(qP), responded sensitively to $Hg^{2+}$, $Cu^{2+}$, and $Cd^{2+}$. These results suggest that $F_v/F_m$, as well as ${\phi}{\prime}_{PSII}$, $R_{Fd}$, $F_o$, and NPQ could be used to assess the effects of heavy metal ions in freshwater ecosystems. However, because many types of heavy metal ions and toxic compounds co-occur under natural conditions, it is difficult to assess heavy metal toxicity in freshwater ecosystems. When Chlorella was exposed to heavy metal ions for 12 or 24h, $F_v/F_m$ and maximal fluorescence yield($F_m$) changed in response to $Hg^{2+}$ and $Cu^{2+}$ based on image analysis. However, assessing quantitatively the toxic effects of several heavy metal ions is challenging.