• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.118-119
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• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.

• 환경생물
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• 제21권4호
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• pp.368-376
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• 2003

The UV-B sensitivity was tested for the intertidal species Chondrus ocellatus from Korea, by measuring photosynthesis estimated as effective quantum yield ($\Phi_{PSII}$) of photosystem II (PS II), growth and content and composition of photosynthetic pigments and UV-absorbing pigments (UVAPs). The $$\Phi_{PSII}$ of the alga decreased with increasing time of exposure to UV-B radiation, followed by fast and nearly full recovery indicating dynamic photoinhibiton. Fresh weight-based growth and pigment contents of C. ocellatus were not seriously affected by UV-B radiation. A single broad peak at 327 nm was obtained from methanol extracts of C. ocellatus, and the absorbance peak increased with increasing UV. The single peak was resolved into three peaks (311, 330 and 336 nm) by the fourth -derivative, and quantitative change in response to UV-B radiation occurred only at 330 nm. High performance liquid chromatography (HPLC) analysis of purified extracts indicated that three MAAs (mycosporine-like amino acids) are present, asterina 330, palythine and shinorine. Field observations during three growing months showed that C. ocellatus exhibit the highest amount of UVAPs in May followed by July and little trace in September, coinciding with the species' phenology. In an ecological context, dynamic photoinhibition as well as accumulation of UVAPs may enable the shallow water red alga C. ocellatus to be well adapted to high UV-B environments.

• 천문학회보
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• 제42권2호
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• pp.42.1-42.1
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• 2017

We present the results from an extensive spectroscopic survey of the central region of the nearby galaxy cluster Abell 2199 (A2199) at z=0.03. By combining 775 new redshifts from the MMT/Hectospec observations with the data in the literature, we construct a large sample of 1624 galaxies with measured redshifts at R<30', which redsults in high spectroscopic completeness at $r_{petro,0}$<20.5 (77%). We use these data to study the kinematics and clustering of galaxies, focusing on the comparison with those of the intracluster medium (ICM) from Suzaku X-ray observations. We identify 406 member galaxies of A2199 at R<30' using the caustic technique. The velocity dispersion profile of cluster members appears smoothly connected to the stellar velocity dispersion profile of the cD galaxy. The luminosity function is well fitted with a Schechter function at $M_r$<-15. The radial velocities of cluster galaxies generally agree well with those of the ICM, but there are some regions where the velocity difference between the two is about a few hundred kilometers per second. The cluster galaxies show a hint of global rotation at R<5' with $v_{rot}=300-600kms^{-1}$, but the ICM in the same region does not show such rotation. We apply a friends-of-friends algorithm to the cluster galaxy sample at R<60' and identify 32 group candidates, and examine the spatial correlation between the galaxy groups and X-ray emission. This extensive survey in the central region of A2199 provides an important basis for future studies of interplay among the galaxies, the ICM, and the dark matter in the cluster.

• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2581-2587
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• 2010

Nitration of tyrosine and tryptophan residues is common in cells under nitrative stress. However, physiological consequences of protein nitration are not well characterized on a molecular level due to limited availability of the 3D structures of nitrated proteins. Molecular dynamics (MD) simulation can be an alternative tool to probe the structural perturbations induced by nitration. In this study we developed molecular mechanics parameters for 3-nitrotyrosine (NIY) and 6-nitrotryptophan (NIW) that are compatible with the AMBER-99 force field. Partial atomic charges were derived by using a multi-conformational restrained electrostatic potential (RESP) methodology that included the geometry optimized structures of both $\alpha$- and $\beta$-conformers of a capped tripeptide ACE-NIY-NME or ACE-NIW-NME. Force constants for bonds and angles were adopted from the generalized AMBER force field. Torsional force constants for the proper dihedral C-C-N-O and improper dihedral C-O-N-O of the nitro group in NIY were determined by fitting the torsional energy profiles obtained from quantum mechanical (QM) geometry optimization with those from molecular mechanical (MM) energy minimization. Force field parameters obtained for NIY were transferable to NIW so that they reproduced the QM torsional energy profiles of ACE-NIW-NME accurately. Moreover, the QM optimized structures of the tripeptides containing NIY and NIW were almost identical to the corresponding structures obtained from MM energy minimization, attesting the validity of the current parameter set. Molecular dynamics simulations of thioredoxin nitrated at the single tyrosine and tryptophan yielded well-behaved trajectories suggesting that the parameters are suitable for molecular dynamics simulations of a nitrated protein.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.687-694
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• 2015

A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaN quantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions (DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall (SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiative recombination rates of the DSDRs resulted in degradation of the optical properties of the LED chips fabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakages were also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing the junction and/or tunneling through defects in the active region. It was found that the SRH nonradiative recombination process was dominant in the voltage range where the forward leakage by tunneling was observed. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were high density SRH nonradiative recombination centers which could affect the optical and electrical properties of the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers and estimation of properties of the LED chips before fabrication.

• 한국정보통신학회논문지
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• 제3권3호
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• pp.681-686
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• 1999

본 논문에서는 편광 비의존 특성을 가지는 반도체 광 증폭기 개발을 위해 지금까지와는 다른 새로운 방법인 160($\AA$) 두께를 가지는 GaInAs 양자 우물에 GaAs Delta 층을 각각 1층, 2층, 3층을 삽입한 구조와 GaAs Delta 3층의 구조에서 Delta 층의 두께를 1 원자층에서 3 원자층까지 변화시켜 계산한 결과, 1 원자층 두께를 가지는 GaAs Delta 층이 3층 포함된 구조에서 3dB 이득 대역폭이 TE, TM 모두 85nm로 매우 넓은 대역폭과 편광 비의존 특성을 함께 가지는 구조를 얻어낼 수 있었다. 이러한 GaInAs 양자 우물에 GaAs Delta 층을 삽입한 구조의 이론적 이득 특성의 결과는 반도체 광 증폭기의 설계에 있어서 아주 중요하며, 또한 광대역 과장 분할 다중화 시스템에 적용될 수 있는 반도체 광 증폭기에 알맞은 구조로 사용될 수 있다.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.16-20
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• 2017

Background: The design of deuteron accelerator neutron source facilities requires reliable yield estimation of gamma-rays as well as neutrons from deuteron-induced reactions. We have so foar measured systematically double-differential thick target neutron yields (DDTTNYs) for carbon, aluminum, titanium, copper, niobium, and SUS304 targets. In the neutron data analysis, the events of gamma-rays taken simultaneously were treated as backgrounds. In the present work, we have re-analyzed the experimental data for a thick carbon target with particular attention to gamma-ray events. Materials and Methods: Double-differential thick target gamma-ray yields from carbon irradiated by 5 and 9 MeV deuterons were measured using an NE213 liquid organic scintillator at the Kyushu University Tandem accelerator Laboratory. The gamma-ray energy spectra were obtained by an unfolding method using FORIST code. The response functions of the NE213 detector were calculated by EGS5 incorporated in PHITS code. Results and Discussion: The measured gamma-ray spectra show some pronounced peaks corresponding to gamma-ray transitions between discrete levels in residual nuclei, and the measured angular distributions are almost isotropic for both the incident energies. Conclusion: PHITS calculations using INCL, GEM, and EBITEM models reproduce the spectral shapes and the angular distributions generally well, although they underestimate the absolute gamma-ray yields by about 20%.

• 한국진공학회지
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• 제18권2호
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• pp.127-132
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• 2009

Sb에 기초한 응력 초격자 적외선검출소자의 구성 물질인 도핑하지 않은 기판 GaSb 결정과 GaSb/SI-GaAs 박막에 잔존하고 있는 진성결함 (intrinsic defect)을 비교 조사하였다. 상온 근처 (250 K)까지 광여기 발광 (PL)을 보이는 GaSb 결정에서의 발광 에너지의 온도의존성으로부터, 밴드갭 에너지에 관한 경험식인 Varshni 함수의 파라미터 ($E_o$, $\alpha$, $\beta$)를 결정하였다. GaAs 기판 위에 성장된 이종 GaSb 박막에서는 GaSb 주요 진성결함으로 알려져 있는 29 meV의 이온화 에너지를 가지는 위치반전 (antisite) Ga ([$Ga_{Sb}$]) 결함과 함께 위치반전 Sb ([$Sb_{Ga}$])와의 복합결함 ([$Ga_{Sb}-Sb_{Ga}$])과 관련된 것으로 분석된 732/711 meV의 한 쌍의 깊은준위 (deep level)가 관측되었다. PL의 온도 및 여기출력 의존성을 분석하여, Sb-rich상태에서 성장된 GaSb 박막에서는 잉여 Sb의 자발확산 (self-diffusion)에 의하여 치환된 위치전도 [$Ga_{Sb}$] 및 [$Sb_{Ga}$]가 결합하여 [$Ga_{Sb}-Sb_{Ga}$]의 깊은준위를 형성하는 것으로 해석되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.