• 한국결정성장학회지
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• 제24권3호
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• pp.111-119
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• 2014

A novel pulsed laser ablation process in liquid was investigated to prepare scheelite-type ceramic [calcium tungstate ($CaWO_4$) and calcium molybdate ($CaMoO_4$)] nanocolloidal particles. The crystalline phase, particle morphology, particle size distribution, absorbance and optical band-gap were investigated. Stable colloidal suspensions consisting of well-dispersed $CaWO_4$ and $CaMoO_4$ nanoparticles with narrow size distribution could be obtained without any surfactant. Particle tracking analysis using optical microscope combined with image analysis was applied for a fast determination of particle size distribution in the prepared nanocolloidal suspensions. The mean nanoparticle size of $CaWO_4$ and $CaMoO_4$ colloidal nanoparticles were 16 nm and 30 nm, with the standard deviations of 2.1 and 5.2 nm, respectively. The optical absorption edges showed blue-shifted values about 60~70 nm than those of reported in bulk crystals. And also, the estimated optical energy band-gaps of $CaWO_4$ and $CaMoO_4$ colloidal particles were 5.2 and 4.7 eV. The observed band-gap widening and blue-shift of the optical absorbance could be ascribed to the quantum confinement effect due to the very small size of the $CaWO_4$ and $CaMoO_4$ nanocolloidal particles prepared by pulsed laser ablation in liquid.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• 한국결정성장학회지
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• 제10권3호
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• pp.199-204
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• 2000

본 연구에서는 청색 발광다이오드, 광전모듈레이터, 태양전지의 창문층 등의 광범위한 응용분야를 갖는 ZnS를 용액 성장법에 의해 nanometer 사이즈의 입자로 구성된 박막의 형태로 슬라이드 유리기판에 성장하고 구조적, 광학적 특성을 분석하고, 이 결과를 토대로 ZnS박막의 양자사이즈효과에 대해 연구하였다. 성장조건에 관련된 인자는 precursor 용액의 농도, 성장온도, 암모니아 용액의 농도, 성장시간 등이었다. X-선 회절분석 결과, 본 연구에서 용액성장법으로 성장한 ZnS박막은 cubic 구조($\beta$-ZnS)를 가졌다. 성장온도가 $75^{\circ}C$일 때 막의 표면상태가 가장 양호했으며 입자사이즈의 균일도도 가장 우수했다 광에너지 변화에 따른 광투과도 측정 결과, 본 연구의 ZnS 시료는 성장조건을 조절함에 따라 에너지밴드갭이 3.69 eV~3.91 eV까지 조절 할 수 있었고, 이는 벌크 ZnS의 에너지밴드갭인 3.65 eV보다 훨씬 높은 수치로서 양자사이즈효과에 의한 blue-shift 현상이 용액성장법으로 합성된 ZnS에서 큰 폭으로 나타남을 알 수 있었다. 그리고 photoluminescence(PL)측정 결과, ZnS 입자의 미세성으로 인한 입자 표면준위의 영향으로 PL 피크가 에너지밴드갭보다 훨씬 적은 에너지 영역에서 발생했다. 특히 PL피크의 위치가 입자사이즈와 막두께에 따라 shift했는데, 이는 용액성장법으로 성장한 ZnS의 경우 본 연구에서 최초로 보고되는 것이다.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.488-493
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• 2023

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.169-172
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• 2003

Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.98-101
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• 2002

The effect of morphology on energy transfer and device performance in phosphorescent dye doped polymer light emitting diodes is reported. We selected two host polymers (PVK and PFHP) which have nearly the same potential for the energy transfer to Ir(ppy)$_3$. The PFHP:Ir(ppy)$_3$ film showed b-micron size aggregation, whereas the PVK:Ir(ppy)$_3$ film showed homogeneous and smooth images. As a result, energy transfer is efficient with high emission efficiency in PVK:Ir(ppy)$_3$ whereas little energy transfer and low quantum efficiency are obtained in PFHP:Ir(ppy)$_3$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.97-97
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• 2014

The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.86.2-86.2
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• 2012

산화금속은 높은 결정성, quantum size effect, 높은 투과도, 대기중의 안정도 등과 같은 탁월한 성질들로 인하여 오늘날 실리콘의 대체물로서 많은 연구가 보고되고 있다. 이러한 금속산화물의 크기와 모양을 조절하며 대량 생산하기 위한 합성방법으로 가수분해, 금속양이온 응축법과 같은 다양한 수용액상 방법이 연구되고 있다. 하지만 2차원 단일 층에 나노물질을 정렬하고 전기적 접합을 형성하는 것이 매우 어렵다는 점 때문에 나노물질을 기판 위에 자유롭게 성장시키는 방법에 대해서는 아직 많이 보고 되어있지 않다. 본 연구에서 저온의 수용액에서 1차원의 나노막대가 2차원의 스피넬 구조 위에 heteroepotaxial 접합을 이루며 성장시키는 방법을 이용하였다. P-n접합 형성을 위하여 (0001)방향으로 배향된 n-type ZnO 나노막대를 (111)방향의 p-type Co3O4 나노플레이트 위에 성장시킨 구조를 제작하였으며 이를 바탕으로 다이오드소자를 제작하여 ideal factor, turn-on voltage, rectifying ratio등의 전기적 특성을 평가하였다.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.53-56
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• 2009

At room-temperature, a facile, seedless, and environmentally benign green route for the synthesis of star like PbS nanoclusters at 7 min in aqueous solution of 1-ethyl-3-methylimidazolium ethyl sulfate, [EMIM] [$EtSO_{4}$], room-temperature ionic liquid (RTIL), via ultrasonic irradiation is proposed. The X-ray diffraction studies display that the products are excellently crystallized in the form of cubic structure. An energy dispersive X-ray spectroscopy (EDX) investigation reveals the products are extremely pure. The absorption spectra of the product exhibit band gap energy of about 4.27 eV which shows an enormous blue shift of 3.86 eV that can be attributed to very small size of PbS nanoparticles produced and quantum confinement effect. A possible formation mechanism of the PbS nanoparticles using ultrasonic irradiation in aqueous solution of the RTIL is presented.

• 한국자기학회지
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• 제16권3호
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• pp.163-167
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• 2006

초음파 조사 및 계면활성제 첨가에 따른 입자의 변화를 연구하기 위하여 침전법, 음향화학적 침전법 그리고 게면활성제를 첨가한 음향화학적 침전법으로 나노 입자를 합성하였고, X-선 회절실험을 통하여 마그네타이트가 합성된 것을 확인하였다. 침전법, 음향화학적 침전법으로 합성한 입자의 크기는 계면활성제를 첨가한 음향화학적 침전법으로 합성한 입자보다 크게 얻어졌고, 초음파 출력이 증가 할수록 크기는 증가하였다. 계면활성제로 올레인 산을 첨가한 음향화학적 기법에서는 게면활성제의 농도에 따라 입자 크기를 선택적으로 조절하여 합성할 수 있었고, 단순 침전법이나 음향화학적 기법에서 보다 생성되는 입자의 크기 분포가 좁게 나타났다. 마그네타이트 나노 입자들의 자기적 특성을 SQUID를 통하여 분석한 결과, 실온에서 모두 초상자성 거동을 보이는 것으로 나타났다.