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Study on the Luminescence of Si Nanocrystallites on Si Substrate fabricated by Changing the Wavelength of Pulsed Laser Deposition  

김종훈 (연세대학 전기전자공학과)
전경아 (연세대학 전기전자공학과)
최진백 (연세대학 전기전자공학과)
이상렬 (연세대학 전기전자공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.4, 2003 , pp. 169-172 More about this Journal
Abstract
Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.
Keywords
Si-nanocrystallites; pulsed laser deposition; laser wavelength; laser energy density; quantum size effect;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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