• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Progress in Medical Physics
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• v.19 no.1
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• pp.63-72
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• 2008

With recent advancement of the medical imaging systems and picture archiving and communication system (PACS), installation of digital radiography has been accelerated over past few years. Moreover, Computed Radiography (CR) which was well established for the foundation of digital x-ray imaging systems at low cost was widely used for clinical applications. This study analyzes imaging characteristics for two systems with different pixel sizes through the Modulation Transfer Function (MTF), Noise Power Spectrum (NPS) and Detective Quantum Efficiency (DQE). In addition, influence of radiation dose to the imaging characteristics was also measured by quantitative assessment. A standard beam quality RQA5 based on an international electro-technical commission (IEC) standard was used to perform the x-ray imaging studies. For the results, the spatial resolution based on MTF at 10% for Agfa CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.9 cycles/mm and 2.8 cycles/mm, respectively. The spatial resolution based on MTF at 10% for Fuji CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.4 cycles/mm and 3.2 cycles/mm, respectively. There was difference in the spatial resolution for $14{\times}17$ inches, although radiation dose does not effect to the MTF. The NPS of the Agfa CR system shows similar results for different pixel size between $100{\mu}m$ for $8{\times}10$ inch I.P and $150{\mu}m$ for $14{\times}17$ inch I.P. For both systems, the results show better NPS for increased radiation dose due to increasing number of photons. DQE of the Agfa CR system for $8{\times}10$ inch I.P and $14{\times}17$ inch I.P resulted in 11% and 8.8% at 1.5 cycles/mm, respectively. Both systems show that the higher level of radiation dose would lead to the worse DQE efficiency. Measuring DQE for multiple factors of imaging characteristics plays very important role in determining efficiency of equipment and reducing radiation dose for the patients. In conclusion, the results of this study could be used as a baseline to optimize imaging systems and their imaging characteristics by measuring MTF, NPS, and DQE for different level of radiation dose.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.35 no.1
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• pp.38-50
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• 2013

Purpose: The aim of this study is to evaluate the effect and potential of electron beam (E-beam) irradiation treatment to the synthetic bony mixtures composed of hydroxyapatite (HA; Bongros$^{(R)}$, Bio@ Co., Korea) and tricalcium phosphate (${\beta}$-TCP, Sigma-Aldrich Co., USA), mixed at various ratios and of type I collagen (Rat tail, BD Biosciences Co., Sweden) as an organic matrix. Methods: We used 1.0~2.0 MeV linear accelerator and 2.0 MeV superconductive linear accelerator (power 100 KW, pressure 115 kPa, temperature $-30{\sim}120^{\circ}C$, sensor sensitivity 0.1~1.2 mV/kPa, generating power sensitivity 44.75 mV/kPa, supply voltage $5{\pm}0.25$ V) with different irradiation dose, such as 1, 30 and 60 kGy. Structural changes in this synthetic bone material were studied in vitro, by scanning electron microscopy (SEM), elementary analysis and field emission scanning electron microscope (FE-SEM), attenuated total reflection (ATR), and electron spectroscopy for chemical analysis (ESCA). Results: The large particular size of HA was changed after E-beam irradiation, to which small particle of TCP was engaged with organic collagen components in SEM findings. Conclusion: The important new in vitro data to be applicable as the substitutes of artificial bone materials in dental and medical fields will be able to be summarized.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.