• Title/Summary/Keyword: Quantum simulation

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Optimization of the InGaN/GaN quantum well structure for 470 mm RC-LED with variation of quantum well thickness and Indium composition (양자우물 두께와 인듐조성 변화에 의한 470 mm RC-LED InGaN/GaN 양자우물 구조의 최적화)

  • Im, Jae-Mun;Park, Chang-Yeong;Park, Gwang-Uk;Lee, Yong-Tak
    • Proceedings of the Optical Society of Korea Conference
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    • 2009.02a
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    • pp.509-510
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    • 2009
  • The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

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Analysis of Nano-Scale Heat Conduction in the Quantum Dot Superlattice by Ballistic Diffusive Approximation (Ballistic Diffusive Approximation에 의한 Quantum Dot Superlattice의 나노열전달 해석)

  • Kim, Won-Kap;Chung, Jae-Dong
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1376-1381
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    • 2004
  • Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

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Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

  • Kim, Su Jin;Kim, Tae Geun
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.16-21
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    • 2013
  • In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

Simulation of Quantum Effects in the Nano-scale Semiconductor Device

  • Jin, Seong-Hoon;Park, Young-June;Min, Hong-Shick
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.32-40
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    • 2004
  • An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.

An Application of Quantum-inspired Genetic Algorithm for Weapon Target Assignment Problem (양자화 유전자알고리즘을 이용한 무기할당)

  • Kim, Jung Hun;Kim, Kyeongtaek;Choi, Bong-Wan;Suh, Jae Joon
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.40 no.4
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    • pp.260-267
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    • 2017
  • Quantum-inspired Genetic Algorithm (QGA) is a probabilistic search optimization method combined quantum computation and genetic algorithm. In QGA, the chromosomes are encoded by qubits and are updated by quantum rotation gates, which can achieve a genetic search. Asset-based weapon target assignment (WTA) problem can be described as an optimization problem in which the defenders assign the weapons to hostile targets in order to maximize the value of a group of surviving assets threatened by the targets. It has already been proven that the WTA problem is NP-complete. In this study, we propose a QGA and a hybrid-QGA to solve an asset-based WTA problem. In the proposed QGA, a set of probabilistic superposition of qubits are coded and collapsed into a target number. Q-gate updating strategy is also used for search guidance. The hybrid-QGA is generated by incorporating both the random search capability of QGA and the evolution capability of genetic algorithm (GA). To observe the performance of each algorithm, we construct three synthetic WTA problems and check how each algorithm works on them. Simulation results show that all of the algorithm have good quality of solutions. Since the difference among mean resulting value is within 2%, we run the nonparametric pairwise Wilcoxon rank sum test for testing the equality of the means among the results. The Wilcoxon test reveals that GA has better quality than the others. In contrast, the simulation results indicate that hybrid-QGA and QGA is much faster than GA for the production of the same number of generations.

Trend Forecasting and Analysis of Quantum Computer Technology (양자 컴퓨터 기술 트렌드 예측과 분석)

  • Cha, Eunju;Chang, Byeong-Yun
    • Journal of the Korea Society for Simulation
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    • v.31 no.3
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    • pp.35-44
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    • 2022
  • In this study, we analyze and forecast quantum computer technology trends. Previous research has been mainly focused on application fields centered on technology for quantum computer technology trends analysis. Therefore, this paper analyzes important quantum computer technologies and performs future signal detection and prediction, for a more market driven technical analysis and prediction. As analyzing words used in news articles to identify rapidly changing market changes and public interest. This paper extends conference presentation of Cha & Chang (2022). The research is conducted by collecting domestic news articles from 2019 to 2021. First, we organize the main keywords through text mining. Next, we explore future quantum computer technologies through analysis of Term Frequency - Inverse Document Frequency(TF-IDF), Key Issue Map(KIM), and Key Emergence Map (KEM). Finally, the relationship between future technologies and supply and demand is identified through random forests, decision trees, and correlation analysis. As results of the study, the interest in artificial intelligence was the highest in frequency analysis, keyword diffusion and visibility analysis. In terms of cyber-security, the rate of mention in news articles is getting overwhelmingly higher than that of other technologies. Quantum communication, resistant cryptography, and augmented reality also showed a high rate of increase in interest. These results show that the expectation is high for applying trend technology in the market. The results of this study can be applied to identifying areas of interest in the quantum computer market and establishing a response system related to technology investment.

Poly-gate Quantization Effect in Double-Gate MOSFET (폴리 게이트의 양자효과에 의한 Double-Gate MOSFET의 특성 변화 연구)

  • 박지선;이승준;신형순
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.17-24
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    • 2004
  • Quantum effects in the poly-gate are analyzed in two dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge-dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-nude analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects.

Effect on Electrical Characteristics of OLEDs According to Energy Gap for HIL of Amorphous Fluoropolymer Materials by Simulation (모의시험에서 정공 주입층 물질 AF의 에너지 갭이 OLED의 전기적 특성에 미치는 영향)

  • Han, Hyun-Seok;Kim, Jung-Sik;Kim, Weon-Jong;Lee, Jong-Yong;So, Byung-Mun;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.33-33
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    • 2010
  • Electrical properties of organic light-emitting diodes (OLEDs) were simulated by S.co's program. The OLEDs have stable operating parameters, high luminance, and high efficiency in simulation. The AF stands for amorphous fluoropolymer in simulation, and it was used as a hole-injection layer. In the five structure of OLEDs, an AF layer is sandwiched between the hole-transport layer and the ITO layer to increase the external quantum efficiency. By considering organic light-emitting diodes using an optimal energy gap of AF, it could contribute to the improvement of the efficiency of the device in the simulation.

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Thermal-hydraulic study of air-cooled passive decay heat removal system for APR+ under extended station blackout

  • Kim, Do Yun;NO, Hee Cheon;Yoon, Ho Joon;Lim, Sang Gyu
    • Nuclear Engineering and Technology
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    • v.51 no.1
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    • pp.60-72
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    • 2019
  • The air-cooled passive decay heat removal system (APDHR) was proposed to provide the ultimate heat sink for non-LOCA accidents. The APDHR is a modified one of Passive Auxiliary Feed-water system (PAFS) installed in APR+. The PAFS has a heat exchanger in the Passive Condensate Cooling Tank (PCCT) and can remove decay heat for 8 h. After that, the heat transfer rate through the PAFS drastically decreases because the heat transfer condition changes from water to air. The APDHR with a vertical heat exchanger in PCCT will be able to remove the decay heat by air if it has sufficient natural convection in PCCT. We conducted the thermal-hydraulic simulation by the MARS code to investigate the behavior of the APR + selected as a reference plant for the simulation. The simulation contains two phases based on water depletion: the early phase and the late phase. In the early phase, the volume of water in PCCT was determined to avoid the water depletion in three days after shutdown. In the late phase, when the number of the HXs is greater than 4089 per PCCT, the MARS simulation confirmed the long-term cooling by air is possible under extended Station Blackout (SBO).