• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.60-60
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.433-435
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• 2005

We have studied the realigning behavior of liquid crystal molecules in liquid crystalline polymer/liquid crystal(LCP/LC) system when they are exposed to external stimulation such as bending and pressing. The birefringence of the LCP/LC in a flexible display device was measured as a function of bending or pressing deformation. The microscopic dynamic behavior of main chain, side chain, and the LC were characterized by FTIR and polarization optical microscopy. When the device is deformed in scattering memory state, liquid crystal(LC) director is found to align from randomly oriented domain state(scattering state) to homeotropic state.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• Journal of Digital Convergence
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• v.19 no.11
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• pp.341-349
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• 2021

We studies to verify results similar to those of previous experiments, and their potential as a lighting device through optical characteristics experiments and resonance and optical characteristics simulations of array devices. The photonic quantum ring (PQR) device having a mesa diameter of 40 ㎛ and an internal hole diameter of 3 ㎛ was fabricated. Through the near-field observation of the fabricated device, it was found that the PQR device operates even at ㎂, and also that the mesa and hole devices are driven independently of each other. As a result of measuring the wavelength spectrum of the device according to the location, the coupling phenomenon due to mesa and holes was confirmed.

• Carbon letters
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• v.21
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• Convergence Security Journal
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• v.21 no.3
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• pp.3-11
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• 2021

Most of the internet security protocols rely on classical algorithms based on the mathematical complexity of the integer factorization problem, which becomes vulnerable to a quantum computer. Recent progresses of quantum computing technologies have highlighted the need for applying quantum key distribution (QKD) on existing network protocols. We report the development and integration of a plug & play QKD device with a commercial IPSec device by replacing the session keys used in IPSec protocol with the quantum ones. We expect that this work paves the way for enhancing security of the star-type networks by implementing QKD with the end-to-end IP communication.

• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.1-6
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• 2014

Superconducting quantum interference device (SQUID) is a sensitive detector of magnetic flux signals. Up to now, the main application of SQUIDs has been measurements of magnetic flux signals in the frequency range from near DC to several MHz. Recently, cryogenic low-noise radio-frequency (RF) amplifiers based on DC SQUID are under development aiming to detect RF signals with sensitivity approaching quantum limit. In this paper, we review the recent progress of cryogenic low-noise RF amplifiers based on SQUID technology.

• Progress in Superconductivity and Cryogenics
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• v.25 no.1
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• pp.1-5
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• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.