• Carbon letters
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• 제17권1호
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• pp.29-32
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• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• 한국분말재료학회지
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• 제19권6호
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

• Journal of Electrical Engineering and information Science
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• 제3권3호
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• pp.385-390
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• 1998

In this paper, the oscillator strengths of both the heavy-hole and the light-hole excitons in GaAs-A\ulcornerGa\ulcornerAs and In\ulcornerGa\ulcornerAs-InP quantum wells with the effect of a magnetic field applied along the growth axis are studied. The calculation is carried out usig a variational approach, based on a simple trial exction wave function. The exciton oscillator strengths are found to decrease with increasing well width and to increase with the applied magnetic fields which lead to additional quantum confinement for moderately wide well sizes. Also, the oscillator strengths for the heavy-hole exciton are found to be large than those of the light-hole exciton in these quantum well structures.

• 한국진공학회지
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• 제8권4A호
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• pp.450-455
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• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• 한국자기학회지
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• 제22권2호
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• pp.66-72
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• 2012

강자성 초전도체의 발견은 상극으로 알려진 강자성과 초전도성이 어떻게 상호작용하여 조화롭게 공존하는지에 대한 학문적인 연구뿐만 아니라 새로운 기술적인 응용을 위한 광범위한 탐구를 이끌고 있다. 본 해설논문에서는 강자성 초전도체에 대한 이해를 돕기 위하여, 먼저 초전도체의 쿠퍼쌍을 깨뜨리는 강한 자기장의 궤도 효과와 상자성 효과에 대하여 설명한다. 자기장의 이러한 효과 이외에도 초전도체/강자성체 복합 구조의 계면에서 발생하는 근접 효과에 의해 단일상 쿠퍼쌍은 강자성체를 지나가는 동안 불안정하여 아주 짧은 침투깊이를 가진다. 그러나 쿠퍼쌍이 홀-진동수 삼중상인 경우 안정되고 긴 유효길이를 가지게 되는데, 새로운 스핀 전자소자로서의 개발을 위해 그 연구의 중요성이 높아지고 있다. 마지막으로 다양한 강자성 초전도체와 양자구속효과에 의해 두 성질이 공존하는 저차원의 물질들을 소개한다.

• 한국진공학회지
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• 제7권s1호
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• 한국재료학회지
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• 제22권3호
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• pp.140-144
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• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.