• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.128-128
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.347-348
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• 2013

To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.319-322
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• 2005

본 논문에서는 양자 통신시스템을 위한 양자 암호화 방법 및 이를 기반으로한 암호 통신시스템을 분석하고, 그 응용 분야에 대한 기법을 해석한다. 이러한 양자 암호화 방업은 기존의 전기 통신망에서 주로 사용되고 있는 여러 가지의 암호화 기법이 속도가 증가됨에 따라, 그 암호화 해독 방법이 깨지고 있는 실정이다. 따라서 본 논문에서는 이를 위한 기본적인 개념을 해석하고 추후 개발하고자 하는 양자 암호시스템을 해석한다.

• Journal of the Korea Society for Simulation
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• v.31 no.3
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• pp.35-44
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• 2022

In this study, we analyze and forecast quantum computer technology trends. Previous research has been mainly focused on application fields centered on technology for quantum computer technology trends analysis. Therefore, this paper analyzes important quantum computer technologies and performs future signal detection and prediction, for a more market driven technical analysis and prediction. As analyzing words used in news articles to identify rapidly changing market changes and public interest. This paper extends conference presentation of Cha & Chang (2022). The research is conducted by collecting domestic news articles from 2019 to 2021. First, we organize the main keywords through text mining. Next, we explore future quantum computer technologies through analysis of Term Frequency - Inverse Document Frequency(TF-IDF), Key Issue Map(KIM), and Key Emergence Map (KEM). Finally, the relationship between future technologies and supply and demand is identified through random forests, decision trees, and correlation analysis. As results of the study, the interest in artificial intelligence was the highest in frequency analysis, keyword diffusion and visibility analysis. In terms of cyber-security, the rate of mention in news articles is getting overwhelmingly higher than that of other technologies. Quantum communication, resistant cryptography, and augmented reality also showed a high rate of increase in interest. These results show that the expectation is high for applying trend technology in the market. The results of this study can be applied to identifying areas of interest in the quantum computer market and establishing a response system related to technology investment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.351-361
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• 2023

The purpose of this paper is to help those who research and develop solar cells in university laboratories and industrial sites understand the most basic and important quantum efficiency measurement and analysis method in analyzing solar cell performance. Starting with the definition of quantum efficiency, we calculate the theoretical current density according to the band gap of the solar cell material from the solar spectrum, along with a detailed introduction to the measurement and analysis methods, and measure and analyze the theoretical current density and quantum efficiency. We discuss in depth how to analyze the performance of solar cells through Quantum efficiency measurement and analysis of solar cells is a very useful method that can give intuition to solar cell performance analysis as it can analyze solar cells according to depth (front emitter, bulk, rear surface). Students and researchers who study solar cells with a deep understanding of theoretical current density and quantum efficiency measurement analysis are expected to use it as a basis for analyzing solar cell performance.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.189-189
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• 2003

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.27-38
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• 2002

A new self-consistent mathematical model for semiconductor quantum well device was developed. The model was based on the direct solution of the Boltzmann transport equation, coupled to the Schrodinger and Poisson equations. The solution yielded the distribution function for a two-dimensional electron gas(2DEG) in quantum well devices. To solve the Boltzmann equation, it was transformed into a tractable form using a Legendre polynomial expansion. The Legendre expansion facilitated analytical evaluation of the collision integral, and allowed for a reduction of the dimensionality of the problem. The transformed Boltzmann equation was then discretized and solved using sparce matrix algebra. The overall system was solved by iteration between Poisson, Schrodinger and Boltzmann equations until convergence was attained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.