• Title/Summary/Keyword: Quantum Well State

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A Two-dimensional Supramolecular Network Built through Unique π-πStacking: Synthesis and Characterization of [Cu(phen)2(μ-ID A)Cu(phen)·(NO3)](NO3)·4(H2O)

  • Lin, Jian-Guo;Qiu, Ling Qiu;Xu, Yan-Yan
    • Bulletin of the Korean Chemical Society
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    • v.30 no.5
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    • pp.1021-1025
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    • 2009
  • A novel supramolecular network containing binuclear copper unit $[Cu(phen)_{2}({\mu}-ID\;A)Cu(phen){\cdot}(NO_{3})](NO_{3}){\cdot}4(H_{2}O)$ (1) was synthesized through the self-assembly of iminodiacetic acid ($H_2IDA$) and 1,10-phenanthroline (phen) in the condition of pH = 6. It has been characterized by the infrared (IR) spectroscopy, elemental analysis, single crystal X-ray diffraction, and thermogravimetric analysis (TGA). 1 shows a 2-D supramolecular structure assembled through strong and unique $\pi-\pi$ packing interactions. Density functional theory (DFT) calculations show that theoretical optimized structures can well reproduce the experimental structure. The TGA and powder X-ray diffraction (PXRD) curves indicate that the complex 1 can maintain the structural integrity even at the loss of free water molecules. The magnetic property is also reported in this paper.

Fourth-order interference between perpendicularly polarized beams with different intensities in a HOM interferometer (HOM 간섭계에서 세기가 다른 수직편광된 빔사이의 4차 간섭)

  • Kim, Heon-Oh;Kim, Tae-Soo;Ko, Jeon-Hoon
    • Korean Journal of Optics and Photonics
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    • v.14 no.2
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    • pp.116-121
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    • 2003
  • We have observed a nonclassical effect in a fourth-order interference experiment with the photon pairs produced by parametric down-conversion and the Hong-Ou-Handel interferometer. For interfering classical fields with orthogonal polarizations, the visibility can be no larger than 50%, and it depends on the ratio of the two beam intensities. It is found that not only is our observed visibility of 85% well above 50%, but it is also independent of the two beam intensities in coincidence measurements made in a two-photon polarization correlation experiment.

Electron Redistribution of Clavalanate on Binding to a $\beta$-Lactamase

  • Sang-Hyun Park;Hojing Kim
    • Bulletin of the Korean Chemical Society
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    • v.14 no.4
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    • pp.491-496
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    • 1993
  • A class A ${\beta}$-lactamase from Staphylococcus aureus PC1 complexed with 3R,5R-clavulanate is studied. The starting geometry for the computation is the crystal structure of the ${\beta}$-lactamase. Docking of the clavulanate to the enzyme is done exploiting the requirements of electrostatic and shape complementarity between the enzyme and clavulanate. This structure is then hydrated by water molecules and refined by energy minimization and short molecular dynamics simulation. In the energy refined structure of this complex, the carboxyl group of the clavulanate is hydrogen bonded to Lys-234, and the the carbonyl carbon atom of the clavulanate is adjacent to the $O_{\gamma}$ of Ser-70. It is found that a crystallographic water molecule initially located at the oxyanion hole, which is formed by the two -NH group of Ser-70 and Gln-237, is replaced by the carbonyl oxygen atom of the 3R,5R-clavulanate after docking and energy reginement. The crystallographic water molecules are proved to be important in ligand binding. Glu-166 residue is found to be repulsive to the binding of clavulanate, which is in agreement with experimental observation. Arg-244 residue is found to be important to the binding of clavulanate as well as to interaction with C2 side chain of the clavulanate. The electron density redistribution of the clavulanate on binding to the ${\beta}$-lactamase in studied by an ab initio quantum-mechanical calculation. A significant redistribution of electron density of the clavulanate is induced by the enzyme, toward the enzyme, toward the transition state of the enzymatic reaction.

How Can We Erase States Inside a Black Hole?

  • Hwang, Junha;Park, Hyosub;Yeom, Dong-han;Zoe, Heeseung
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1420-1430
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    • 2018
  • We investigate an entangled system, which is analogous to a composite system of a black hole and Hawking radiation. If Hawking radiation is well approximated by an outgoing particle generated from pair creation around the black hole, such a pair creation increases the total number of states. There should be a unitary mechanism to reduce the number of states inside the horizon for black hole evaporation. Because the infalling antiparticle has negative energy, as long as the infalling antiparticle finds its partner such that the two particles form a separable state, one can trace out such a zero energy system by maintaining unitarity. In this paper, based on some toy model calculations, we show that such a unitary tracing-out process is only possible before the Page time while it is impossible after the Page time. Hence, after the Page time, if we assume that the process is unitary and the Hawking pair forms a separable state, the internal number of states will monotonically increase, which is supported by the Almheiri-Marolf-Polchinski-Sully (AMPS) argument. In addition, the Hawking particles cannot generate randomness of the entire system; hence, the entanglement entropy cannot reach its maximum. Based on these results, we modify the correct form of the Page curve for the remnant picture. The most important conclusion is this: if we assume unitarity, semi-classical quantum field theory, and general relativity, then the black hole should violate the Bekenstein-Hawking entropy bound around the Page time at the latest; hence, the infinite production arguments for remnants might be applied for semi-classical black holes, which seems very problematic.

Enhancement of light extraction efficiency in vertical light-emitting diodes with MgO nano-pyramids structure

  • Son, Jun-Ho;Yu, Hak-Ki;Lee, Jong-Lam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.16-16
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    • 2010
  • GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

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Silicon wire array fabrication for energy device (실리콘 와이어 어레이 및 에너지 소자 응용)

  • Kim, Jae-Hyun;Baek, Seung-Ho;Kim, Kang-Pil;Woo, Sung-Ho;Lyu, Hong-Kun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.440-440
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    • 2009
  • Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

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Recent Advances in Di-$\pi$-methane Processes. Novel Reactions of 1,4-Unsaturated Compounds Promoted by Triplet Sensitization and Photoelectron Transfer

  • Armesto, Diego;Ortiz, Maria J.;Agarrabeitia, Antonia R.
    • Journal of Photoscience
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    • v.10 no.1
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    • pp.9-20
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    • 2003
  • Recent studies on the photoreactivity of l,4-unsaturated systems have changed some ideas that were firmly established in this area of research for many years. Thus, we have described the first examples of 2-aza-di-$\pi$-methane (2-ADPM) rearrangements promoted by triplet-sensitization and by single electron transfer (SET) using electron-acceptor sensitizers. These reactions afford N-vinylaziridine and cyclopropylimine photoproducts in the first examples of di-$\pi$-methane processes that yield three-membered ring heterocycles. l-Aza-1,4-dienes also undergo SET-promoted l-aza-di-$\pi$-methane (l-ADPM) rearrangements via radical-cation intermediates using electron acceptor sensitizers. In some cases, alternative cyclizations yielding different carbocycles and heterocycles have been observed. The l-ADPM and di-$\pi$-methane (DPM) reactions also occur via radical-anion intermediates on irradiation using electron donor sensitizers. On the other hand, the photoreactivity reported for $\beta$,${\gamma}$-unsaturated aldehydes for many years was decarbonylation to the corresponding alkenes. However, our studies demonstrate that these compounds undergo the oxa-di-$\pi$-methane (ODPM) rearrangement with high chemical and quantum efficiency. A comparison of the photochemical reactivity of $\beta$,${\gamma}$-unsaturated aldehydes and corresponding methyl ketones has shown that the ketones do not undergo the ODPM rearrangement while the corresponding aldehydes are reactive by this pathway. Monosubstituted $\beta$,${\gamma}$-unsaturated aldehydes at C-2 undergo the ODPM rearrangement yielding the corresponding cyclopropane carbaldehydes diastereoselectively. Finally, we have described the first examples of reactions, similar to the well know Norrish Type I process, which take place in the triplet excited state of $\beta$,${\gamma}$-unsaturated carbonyl compounds by excitation of the C-C double bond instead of the carbonyl group.

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Tuning Photophysical and Electrochemical Properties of Heteroleptic Cationic Iridium(III) Complexes Containing Substituted 2-Phenylquinoxaline and Biimidazole

  • Sengottuvelan, Nallathambi;Seo, Hoe-Joo;Kang, Sung-Kwon;Kim, Young-Inn
    • Bulletin of the Korean Chemical Society
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    • v.31 no.8
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    • pp.2309-2314
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    • 2010
  • Design and syntheses of four red phosphorescent heteroleptic cationic iridium(III) complexes containing two substituted phenylquinoxaline (pqx) or benzo[b]thiophen-2-yl-pyridin (btp) main ligands and one 2,2'-biimidazole (H2biim) ancillary ligand are reported: [$(pqx)_2$Ir(biim)]Cl (1), [$(dmpqx)_2$Ir(biim)]Cl (2), [$(dfpqx)_2$Ir(biim)]Cl (3), [$(btp)_2$Ir(biim)]Cl (4). Complex 1 showed a distorted octahedral geometry around the iridium(III) metal ion with cis metallated carbons and trans nitrogen atoms. The absorption, emission and electrochemical properties were systematically evaluated. The complexes exhibited red phosphorescence in the spectral range of 580 to 620 nm with high quantum efficiencies of 0.58 - 0.78 in both solution and solid-state at room temperature depending on the cyclometalated main ligands. The cyclic voltammetry of the complexes (1-3) showed a metal-centered irreversible oxidation in the range of 1.40 to 1.90 V as well as two quasi reversible reduction waves from -1.15 to -1.45 V attributed to the sequential addition of two electrons to the more electron accepting heterocyclic portion of two distinctive cyclometalated main ligands, whereas complex 4 showed a reversible oxidation potential at 1.24 V and irreversible reduction waves at -1.80 V.

Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs

  • Yang, Hyuck-Soo;Han, Sang-Youn;Hlad, M.;Gila, B.P.;Baik, K.H.;Pearton, S.J.;Jang, Soo-Hwan;Kang, B.S.;Ren, F.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.131-135
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    • 2005
  • The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

Influence of high energy electron beam treatment on the photocatalytic activity of $TiO_2$ nanoaparticles on carbon fiber

  • Sim, Chae-Won;Kim, Myeong-Ju;Seo, Hyeon-Uk;Kim, Gwang-Dae;;Kim, Dong-Un;Nam, Jong-Won;Jeong, Myeong-Geun;Lee, Byeong-Cheol;Park, Ji-Hyeon;Kim, Yeong-Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.441-441
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    • 2011
  • $TiO_2$ nanoparticles were grown on carbon fiber by atomic later deposition (ALD) with TTIP $(Ti(OCH(CH_3)_2)_4$ and $H_2O$ precusors. After sampe surfaces were treated by electron beam (1 MeV, 5 KGy), an improvement in the photocatalytic reacitivity of $TiO_2$ nanoparticles on carbon fiber was observed. An increase in the population of hydroxyl group on $TiO_2$ particles and the oxidation of carbon fiber were found upon e-beam exposure, whereas there was no noticeable changes of their morphology. It implies that those changes in O and C 1s state of $TiO_2$ particles/carbon fiber induced by e-beam treatment could be related to the enhancement of the photocatalytic activity. In contrast, when carbon fiber fully covered with $TiO_2$ thick films was treated with high-energy electron beam under same conditions, the improvement of photocatalytic activity as well as any changes in XPS spectra (Ti 2p, O 1s and C 1s) could not be found.

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