• Title/Summary/Keyword: Quantum Key

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PFM APPLICATION FOR THE PWSCC INTEGRITY OF Ni-BASE ALLOY WELDS-DEVELOPMENT AND APPLICATION OF PINEP-PWSCC

  • Hong, Jong-Dae;Jang, Changheui;Kim, Tae Soon
    • Nuclear Engineering and Technology
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    • v.44 no.8
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    • pp.961-970
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    • 2012
  • Often, probabilistic fracture mechanics (PFM) approaches have been adopted to quantify the failure probabilities of Ni-base alloy components, especially due to primary water stress corrosion cracking (PWSCC), in a primary piping system of pressurized water reactors. In this paper, the key features of an advanced PFM code, PINEP-PWSCC (Probabilistic INtegrity Evaluation for nuclear Piping-PWSCC) for such purpose, are described. In developing the code, we adopted most recent research results and advanced models in calculation modules such as PWSCC crack initiation and growth models, a performance-based probability of detection (POD) model for Ni-base alloy welds, and so on. To verify the code, the failure probabilities for various Alloy 182 welds locations were evaluated and compared with field experience and other PFM codes. Finally, the effects of pre-existing crack, weld repair, and POD models on failure probability were evaluated to demonstrate the applicability of PINEP-PWSCC.

Coriolis Coupling Influence on the H+LiH Reaction

  • Zhai, Hongsheng;Li, Wenliang;Liu, Yufang
    • Bulletin of the Korean Chemical Society
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    • v.35 no.1
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    • pp.151-157
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    • 2014
  • We have reported the reaction probability, integral reaction cross section, and rate constant for the title system calculated with the aid of a time-dependent wave packet approach. The ab initio potential energy surface (PES) of Prudente et al. (Chem. Phys. Lett. 2009, 474, 18) is employed for the purpose. The calculations are carried out over the collision energy range of 0.05-1.4 eV for the two reaction channels of H + LiH ${\rightarrow}$ Li + $H_2$ and $H_b$ + $LiH_a$ ${\rightarrow}$ $LiH_b$ + $H_a$. The Coriolis coupling (CC) effect are taken into account. The importance of including the Coriolis coupling quantum scattering calculations are revealed by the comparison between the Coriolis coupling and the centrifugal sudden (CS) approximation calculations.

Measurement of distance-dependent quantum bit error rate in two-way quantum key distribution systems (양방향 양자키분배 시스템에서 전송거리에 따른 오류율 측정)

  • Lee, Seung-Hun;Jeong, Gyu-Hyeon;Kim, Seung-Hwan;Lee, Min-Hui;Kim, Gyeong-Heon
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.307-308
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    • 2008
  • 본 논문에서는 장거리 양자암호 전송에 있어서 광섬유 전송 거리에 따른 오류율을 측정한 연구 결과를 소개한다. 특히 외부 환경에 안정된 양방향 양자 암호 전송 기술의 하나인 plug-and-play 방식의 구도에서 전송 거리를 극대화하는 노력에 있어서 가장 문제시되는 Raleigh-backscattering의 효과에 의한 양자비트 전송에서의 오류를 측정하였다. 아울러 이러한 오류를 최소화하면서 70 km 단일모드 광섬유 전송을 구현한 양자통신 결과를 소개하고자 한다.

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New Trends in GaAs Epitaxial Techniques (GaAs 에피 성장 기술의 최근 연구 동향)

  • Park, Seong-Ju;Cho, Keong-Ik
    • Electronics and Telecommunications Trends
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    • v.3 no.4
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    • pp.3-12
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    • 1988
  • Epilayer growing process has been recognized as a key technology for successful GaAs based devices and integrations. These may include HEMT, multiple quantum well structures, band gap engineering, and quantum confinement heterostructures. The fabrication of epilayers in these devices must meet very stringent requirements in terms of crystallinity, composition, film thickness and interface quality. In particular, the quality of interfaces is getting more important because the film thickness, and flatness, roughness and stability at interface of ultrathin films cause critical effects on the device performance. This article reviews the current status of modern epitaxial techniques which have been developed in the last few years. First, the new techniques PLE, GI, MEE, TSL based on MBE technique will be reviewed and their technical importance will be stressed. Secondly, MOMBE, GSMBE, CBE which combine the advantages of MBE and MOCVD will also be discussed. Thirdly, the new sophisticated epitaxial technique, ALE, of which mechanism is totally different from others, will also be reviewed. Finally, areas which should be exploited more extensively to accomplish these techniques will be addressed.

ETRI AI Strategy #2: Strengthening Competencies in AI Semiconductor & Computing Technologies (ETRI AI 실행전략 2: AI 반도체 및 컴퓨팅시스템 기술경쟁력 강화)

  • Choi, S.S.;Yeon, S.J.
    • Electronics and Telecommunications Trends
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    • v.35 no.7
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    • pp.13-22
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    • 2020
  • There is no denying that computing power has been a crucial driving force behind the development of artificial intelligence today. In addition, artificial intelligence (AI) semiconductors and computing systems are perceived to have promising industrial value in the market along with rapid technological advances. Therefore, success in this field is also meaningful to the nation's growth and competitiveness. In this context, ETRI's AI strategy proposes implementation directions and tasks with the aim of strengthening the technological competitiveness of AI semiconductors and computing systems. The paper contains a brief background of ETRI's AI Strategy #2, research and development trends, and key tasks in four major areas: 1) AI processors, 2) AI computing systems, 3) neuromorphic computing, and 4) quantum computing.

Collusion-Resistant Unidirectional Proxy Re-Encryption Scheme from Lattices

  • Kim, Kee Sung;Jeong, Ik Rae
    • Journal of Communications and Networks
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    • v.18 no.1
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    • pp.1-7
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    • 2016
  • Most of the previous proxy re-encryption schemes rely on the average-case hardness problems such as the integer factorization problems and the discrete logarithm problems. Therefore, they cannot guarantee its security under quantum analysis, since there exist quantum algorithms efficiently solving the factorization and logarithm problems. In the paper, we propose the first proxy re-encryption scheme based on the hard worst-case lattice problems. Our scheme has many useful properties as follows: Unidirectional, collusion-resistant, noninteractive, proxy invisible, key optimal, and nontransitive.We also provided the formal security proof of the proposed scheme in the random oracle model.

Fabrication of Water-Soluble CuInS2 Quantum Dots by Hot-injection Method and Phase Transfer Strategy

  • Deng, Chong;Fu, Bowen;Wang, Yanlai;Yang, Lin
    • Nano
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    • v.13 no.10
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    • pp.1850114.1-1850114.7
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    • 2018
  • Here we report an optimized hot-injection method and a phase transfer strategy for the synthesis of water-soluble $CuInS_2$ QDs with desired properties. The structure and morphology studies demonstrate that the resulting QDs are $CuInS_2$ tetragonal phase with well-defined facets. It is also found that the crystal size gradually increases with the increase of reaction temperature, while the surface of QDs with pre- and post-phase transfer is functionalized with hydrophobic and hydrophilic ligands, respectively. Spectroscopy measurements reveal the size-dependent optical properties of $CuInS_2$ QDs, demonstrating the quantum confinement effect in this system.

Trends in Display Technology Development Applying Inkjet Printing Principles (잉크젯 프린팅 원리를 적용한 디스플레이 기술 개발 동향)

  • B.H. Kwon;C.W. Joo
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.26-35
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    • 2023
  • Inkjet printing is a typical printing technology with many advantages, such as material cost reduction, noncontact pattern formation without a mask, and process simplification. With the recent and rapid development of ink materials, parts and equipment, and process technologies related to inkjet printing, it is becoming a major process in various areas of the display industry. In particular, for the QD-OLED (quantum dot-organic light-emitting diode) display announced by Samsung Display in 2022, quantum dot pixel production by applying inkjet printing is a key technology. We analyze inkjet printing technology for mass production applied to the display industry and discuss the technology development trends in academia and industry toward the realization of next-generation displays.

Single-bit digital comparator circuit design using quantum-dot cellular automata nanotechnology

  • Vijay Kumar Sharma
    • ETRI Journal
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    • v.45 no.3
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    • pp.534-542
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    • 2023
  • The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

The Post Quantum Cryptography and Quantum Key Distribution Technology Research Trends Analysis and Reflections (포스트 퀀텀 암호 및 양자 키 분배 기술 연구 동향)

  • Jo Byung Hyun;Jong Hyuk Park
    • Proceedings of the Korea Information Processing Society Conference
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    • 2023.11a
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    • pp.232-235
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    • 2023
  • ICT 기술과 IoT 기술의 급속한 발전으로 인해 인간은 네트워크와 밀접한 관계를 형성하며 이를 통해 다양한 서비스를 경험하고 있다. 그러나 ICT 기술의 발전과 함께 사이버 공격의 급증으로 인해 네트워크 보안에 대한 필요성이 대두되고 있다. 또한 양자 컴퓨팅을 활용한 다양한 공격은 기존 암호화 체계를 무너뜨려 빠른 대응 및 솔루션이 필요하다. 양자 기반 공격으로부터 안전한 네트워크 환경을 구축하기 위해 양자 키 분배 시스템 및 양자 내성 암호가 활발히 연구되고 있으며 NIST 에서 발표한 양자 내성 암호화 기법의 성능, 취약점, 실제 네트워크 상의 구현 가능성, 향후 발전 방향 등 다각적 관점에서 연구 및 분석이 진행되고 있다. 본 논문에서는 양자 기반 공격에 대해 설명하고 양자 내성 암호화 기법의 연구 동향에 대해 분석한다. 또한, 양자 중첩, 양자 불확실성 등 양자의 물리적 성질을 활용함으로써 양자 공격으로 부터 안정성을 제공할 수 있는 양자 키 분배 기법에 대해 설명한다.