• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.228.1-228.1
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• 2013

Photoreflectance (PR) 분광법은 비접촉, 비파괴적인 변조분광법으로서 반도체 표면 및 계면의 광학적 특성 연구에 많이 이용되고 있다. PR 신호의 Franz-Keldysh oscillation (FKO)으로부터 Molecular Beam Epitaxy (MBE) 방법으로 성장한 InAs/GaAs 양자점 태양전지 접합계면의 전기장을 조사하였다. InAs 양자점의 크기는 각각 1.7, 2.0, 2.5, 3.0 monolayer이며, p+-n-n+ 태양전지 구조의 표면으로부터 1.8 ${\mu}m$, 활성영역으로부터 약 1.1 ${\mu}m$ 위치에 삽입되어 있다. 여기광 세기가 큰 영역(1~200 $mW/cm^2$)에서 접합계면의 전기장으로부터 관측한 photovoltage 효과는 로그 스케일에서 대체로 선형적인 분포를 보였으며, 이를 계산결과와 비교 분석하였다. 또한, 양자점 크기 및 온도에 따른 photovoltage 효과는 활성영역에서 여기된 운반자의 양 및 양자점에 의한 전하트랩의 영향과 관련하여 비교 분석하였다.

• Safety and Health at Work
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• v.12 no.3
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• pp.403-415
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• 2021

Background: This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. Methods: A systematic patent search was conducted with the Google "Advanced Patent Search" engine using the keywords "semiconductor" and "benzene" combined with all of the words accessed on January 24, 2016. Results: As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. Conclusion: Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.

• Journal of the Korean Electrochemical Society
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• v.22 no.3
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• pp.104-111
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• 2019

Metal halide perovskite materials are considered as promising semiconducting materials for next-generation solar cells due to their unique electrical and optical properties. Intensive progress in perovskite solar cell yielded a certified power conversion efficiency over 24%. However, most of highly efficient perovskite solar cells required Pb-based perovskite materials, which is a critical obstacle for their commercialization, and development of Pb-free perovskite materials is one of recent urgent issues in this field. In this paper, we will introduce recent research progress on Pb-free perovskite solar cells.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.900-904
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• 2011

We have synthesized core-shell structured nanocrystals based on chalcopyrite-type $Cu_{0.2}InS_2$. The photoluminescence of the nanocrystals shows a significant blueshift in the emission wavelength by shell capping with ZnS layers. This shift can be explained with the compressive stress to core nanocrystals applied by the formation of a ZnS shell layer with a large lattice mismatch with the core. In this study, the emission wavelength could be tuned by changing the composition of the shell layers. Nanocrystals with emission wavelength ranging from 575 nm through 630 nm were synthesized by varying the portion of cadmium compared with zinc in the shell layers.

• Journal of the Korean Chemical Society
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• v.60 no.6
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• pp.402-409
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• 2016

Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.351-359
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• 1996

We have investigated the effect of hydrogen plasma on the formation of InAs QDs (quantum dots) structure by using a CBE (chemical beam epitaxy)system equipped with ECR (electron cyclotron resonance) plasma source. It is confirmed that the formation of self-organized InAs-QDs on GaAs is started after the growth of InAs layer up to 2.6 ML (monolayer) with the irradiation of hydrogen plasma while it is started after 1.9 ML without hydrogen gas and hydrogen plasma through the observation of RHEED patterns. Density and size of the QDs formed at $T_{sub}=370^{\circ}C$ are $1.9{\times}10^{11}cm^{-2}$ and 17.7 nm without hydrogen plasma, and $1.3{\times}10^{11}cm^{-2}$ and 19.4 nm with hydrogen plasma, respectively. It is also observed from the PL(photoluminescence) measurement on InAs-QDs that red shift in PL peak energy and broadening in FWHM (full width at half maximum)of PL peak caused by the effects of hydrogen plasma on the increment of size and its distribution. These effects of hydrogen plasma are considered as a act of atomic hydrogen which enhances the layer-growth of InAs on GaAs resulted from the relief of misfit strain between GaAs substrate and InAs.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.705-713
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• 2017

A novel material, $Bi_2WO_6-GO-TiO_2$ composite, was successfully synthesized using a facile hydrothermal method. During the hydrothermal reaction, the loading of $Bi_2WO_6$ and $TiO_2$ nanoparticles onto graphene sheets was achieved. The obtained $Bi_2WO_{6-GO-TiO2}$ composite photo-catalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM), Raman spectroscopy, ultraviolet-visible diffuse reflectance spectroscopy (UV-vis-DRS), and X-ray photoelectron spectroscopy (XPS). The $Bi_2WO_6$ nanoparticle showed an irregular dark-square block nanoplate shape, while $TiO_2$ nanoparticles covered the surface of the graphene sheets with a quantum dot size. The degradation of rhodamine B (RhB), methylene blue trihydrate (MB), and reactive black B (RBB) dyes in an aqueous solution with different initial amount of catalysts was observed by UV spectrophotometry after measuring the decrease in the concentration. As a result, the $Bi_2WO_6-GO-TiO_2$ composite showed good decolorization activity with MB solution under visible light. The $Bi_2WO_6-GO-TiO_2$ composite is expected to become a new potential material for decolorization activity. Photocatalytic reactions with different photocatalysts were explained by the Langmuir-Hinshelwood model and a band theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.440-440
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• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• Ceramist
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• v.22 no.3
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• pp.281-300
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• 2019

Surface enhanced Raman scattering (SERS) was first discovered in 1974 by an unexpected Raman signal increase from Pyridine adsorbed on rough Ag electrode surfaces by the M. Fleishmann group. M. Moskovits group suggested that this phenomenon could be caused by surface plasmon resonance (SPR), which is a collective oscillation of free electrons at the surface of metal nanostructures by an external light source. After about 40 years, the SERS study has attracted great attention as a biomolecule analysis technology, and more than 2500 new papers and 500 review papers related to SERS topic have been published each year in recently. The advantages of biomaterials analysis using SERS are as follows; ① Molecular level analysis is possible based on unique fingerprint information of biomolecule, ② There is no photo-bleaching effect of the Raman reporters, allowing long-term monitoring of biomaterials compared to fluorescence microscopy, ③ SERS peak bandwidth is approximately 10 to 100 times narrower than fluorescence emission from organic phosphor or quantum dot, resulting in higher analysis accuracy, ④ Single excitation wavelength allows analysis of various biomaterials, ⑤ By utilizing near-infrared (NIR) SERS-activated nanostructures and NIR excitation lasers, auto-fluorescence noise in the visible wavelength range can be avoided from in vivo experiment and light damage in living cells can be minimized compared to visible lasers, ⑥ The weak Raman signal of the water molecule makes it easy to analyze biomaterials in aqueous solutions. For this reason, SERS is attracting attention as a next-generation non-invasive medical diagnostic device as well as substance analysis. In this review, the principles of SERS and various biomaterial analysis principles using SERS analysis will be introduced through recent research papers.