• Title/Summary/Keyword: QD-LED

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Electrical and Optical Characteristics of QD-LEDs Using InP/ZnSe/ZnS Quantum Dot (InP/ZnSe/ZnS 양자점을 이용한 QD-LED의 전기 및 광학적 특성)

  • Choi, Jae-Geon;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.151-155
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    • 2014
  • We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

Improved charge balance in quantum dot light-emitting diodes using self-assembled monolayer (자기조립단분자막을 이용한 양자점 발광다이오드의 전하 균형도 개선)

  • Sangwook Park;Woon Ho Jung;Yeyun Bae;Jaehoon Lim;Jeongkyun Roh
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.30-37
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    • 2023
  • To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

In Vitro Quantum Dot LED to Inhibit the Growth of Major Pathogenic Fungi and Bacteria in Lettuce (Quantum Dot LED를 이용한 상추 주요 병원성 곰팡이 및 세균의 생장억제효과 기내실험)

  • Lee, Hyun-Goo;Kim, Sang-Woo;Adhikari, Mahesh;Gurung, Sun Kumar;Bazie, Setu;Kosol, San;Gwon, Byeong-Heon;Ju, Han-Jun;Ko, Young-Wook;Kim, Yong-Duk;Yoo, Yong-Whan;Park, Tae-Hee;Shin, Jung-Chul;Kim, Min-Ha;Lee, Youn Su
    • Research in Plant Disease
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    • v.25 no.3
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    • pp.114-123
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    • 2019
  • QD LED has an ideal light source for growing crops and can also be used to control plant pathogenic microorganisms. The mycelial growth inhibition effect of QD LED light on Rhizoctonia solani, Phytophthora drechsleri, Sclerotinia sclerotiorum, Sclerotinia minor, Botrytis cinerea, Fusarium oxysporum, Pectobacterium carotovorum, and Xanthomonas campestris were investigated. According to the results, BLUE (450 nm) light, suppressed S. sclerotiorum by 16.7% at 50 cm height from the light source, and 94.1% mycelial growth at 30 cm height. Mycelial growth of Sclerotinia minor was inhibited by 80.4% at 50 cm height and 36.3% at 50 cm height in B. cinerea. S. minor, and B. cinerea was inhibited by 100% mycelial growth at a height of 30 cm from the light source. At 15 cm height, all three pathogens (B. cinerea, S. minor, and S. sclerotiorum) was inhibited by 100%. QD RED (M1) and QD RED (M2) light suppressed mycelial growth of S. minor and B. cinerea by 100% at 30 cm and 15 cm height from the light source. For S. sclerotiorum, QD RED (M1) and QD RED (M2) showed 75.2% and 100% inhibition, respectively. Further experiment was conducted to know the suppression effect of lights after inoculating the fungal pathogens on lettuce crop. According to the results, QD RED (M2) suppressed the S. sclerotiorum by 59.9%. In addition, Blue (450 nm), QD RED (M1), and QD RED (M2) light reduce the infestation by 59.9%. In case of B. cinerea, disease reduction was found 84% by BLUE (450 nm) light. Results suggest that the growth inhibition of mycelium increases by Quantum dot LED light.

Effect of LED and QD-LED(Quantum Dot) Treatments on Production and Quality of Red Radish(Raphanus sativus L.) Sprout (LED와 QD-LED(Quantum Dot) 광처리가 적무 새싹의 생산과 품질에 미치는 영향)

  • Choi, In-Lee;Wang, Lixia;Lee, Ju Hwan;Han, Su Jung;Ko, Young-Wook;Kim, Yongduk;Kang, Ho-Min
    • Journal of Bio-Environment Control
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    • v.28 no.3
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    • pp.265-272
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    • 2019
  • The purpose of this study was to investigate the effects of LED and QD-LED (Quantum Dot) irradiation on seed germination, antioxidant ability, and microbial growth, during red radish (Raphanus sativus L.) sprouts cultivation. Irradiated light was blue, red, blue + red and blue + red + far red (QD-LED) lights, and the controls were a fluorescent lamp (FL), and dark condition. Germination rate of red radish was highest in the dark condition. The plant height and fresh weight of red radish sprouts that irradiated each light for 24 hrs after 7 days growing in dark condition, did not shown significantly difference among treatments. After 24 hrs of light irradiation, cotyledon green was best in blue + red light, and the red hypocotyl was excellent in blue light and QD-LED light. DPPH and phenol contents were high in dark and blue + red light treatment, and anthocyanin content was high in blue light and QD-LED light. Total aerobic counts were similar in all treatments and did not show bactericidal effect, whereas E. coli count was lowest in QD-LED light treatment, and yeast and mold counts were lowest in FL only treatment. Results suggest that when red radish seeds were germinated in dark condition and cultivated for 7 days as sprouts, and then treated with blue light or QD-LED light for 24 hrs, the seeds produced good quality red radish sprouts with greenish cotyledon, reddish hypocotyl, high anthocyanin content, and lower level of E coli contamination.

White Light -Emitting Diodes with Multi-Shell Quantum Dots

  • Kim, Kyung-Nam;Han, Chang-Soo;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.92-92
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    • 2010
  • Replacing the existing illumination with solid-state lighting devices, such as light-emitting diodes (LEDs) are expected to reduce energy consumption and environmental pollution as they provide better efficiency and longer lifetimes. Currently, white light emitting diodes are composed of UV or blue LED with down-converting materials such as highly luminescent phosphors White light-emitting diodes (LED) were fabricated with multi-shell nanocrystal quantum dots for enhanced luminance and improved stability over time. Multi-shell quantum dots (QDs) were synthesized through one pot process by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. As prepared, the multi-shell QD has cubic lattice of zinc-blend structure with semi-spherical shape with quantum yield of higher than 60 % in solution. Further, highly fluorescent multi-shell QD was deposited on the blue LED, which resulted in QD-based white LED with high luminance with excellent color rendering properties.

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White Light Emission with Quantum Dots: A Review

  • Kim, Nam Hun;Jeong, Jaehak;Chae, Heeyeop
    • Applied Science and Convergence Technology
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    • v.25 no.1
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    • pp.1-6
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    • 2016
  • Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

ITO-Ag NW based Transparent Quantum Dot Light Emitting Diode (ITO-Ag NW기반 투명 양자점 발광 다이오드)

  • Kang, Taewook;Kim, Hyojun;Jeong, Yongseok;Kim, Jongsu
    • Korean Journal of Materials Research
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    • v.30 no.8
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    • pp.421-425
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    • 2020
  • A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

고색재현성 디스플레이 응용을 위한 고안정성 양자점 함유 유리색변환소재

  • 정운진;이한솔;이진주
    • Information Display
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    • v.23 no.4
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    • pp.12-21
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    • 2022
  • 반도체 기반 양자점 (QD)소재와 CsPbX3 (X=Cl, Br, I)기반 perovskite 양자점 또는 나노결정 소재(PNC)는 매우 우수한 양자효율과 좁은 발광 선폭으로 고색재현성 디스플레이 색변환 소재 또는 발광 소재로서 각광을 받고 있다. 그러나, 기존 화학적 합성법을 통해 제조되는 QD 및 PNC 소재는 취약한 열 및 화학적 안정성으로 인해 장기 내구성의 개선이 요구된다. 이들 QD 및 PNC 소재는 모두 완전 무기 소재인 산화물 기반 유리 소재내에 생성이 가능하며, 이를 통해 장기 내구성을 근본적으로 개선할 수 있다. 반도체 기반 QD 함유 유리소재 (QDEG)의 경우, 유리 내 core/shell 구조를 가진 QD의 생성으로 양자효율의 향상이 가능했으나, 콜로이드 기반 양자점 (cQD)과 달리 다중 shell의 형성이 어려워 양자효율이 제한되고, 발광 선폭이 넓어 고색재현성 디스플레이용 색변환 소재로 적용되기에는 아직 한계가 있다. 한편, Perovskite 양자점 (또는 나노결정) 함유 유리소재 (PNEG) 소재는 QDEG과 달리 콜로이드 기반의 PNC (c-PNC)가 가지는 우수한 양자효율과 20 nm 수준의 좁은 선폭을 유리 내에서도 가지며, c-PNC 대비 열적, 화학적 및 광학적 안정성이 획기적으로 향상되어 실질적인 응용 가능성을 높이고 있다. 특히, 일반적인 용융-급랭법으로 제조하여 대량생산에 용이하고, 분말 또는 판상 등 다양한 형태로의 제작이 가능한 장점이 있다. 현재까지 제조된 PNEG의 최대 PL-QY는 450 nm 여기 시 녹색 및 적색에서 약 60% 수준이며, Al2O3 분말을 이용할 경우 최대 80% 수준까지 달성이 가능하다. 또한, PNEG과 blue LED를 이용하여 백색 LED를 구현할 경우 color filter를 적용하지 않을 때, NTSC 대비 최대 약 130 % 수준의 높은 색재현 영역을 보여 주고 있으며, 실제 LCD용 BLU로 적용 시 기존 상용 c-QD 소재와 동등 이상의 색재현 영역을 보이고 있어, 실질적인 응용 가능성이 매우 높음을 확인하였다. PNEG의 상업적인 응용을 위해서는 몇 가지 추가적인 연구 개발이 필요하다. 기존 c-QD 또는 c-PNC는 나노 수준 크기의 입자가 액상에 분산된 형태로 입도 제어가 용이하나, PNEG의 경우 분말 제조 시 유리 형성 후 분쇄를 통해 제조되며, 입도가 대개 수십 ㎛ 이하로 작아질 경우 PL-QY가 저하되어, 향후 잉크젯 공정 응용을 위해서는 고효율의 분말 제조공정 개발이 필요하다. 또한, 유리 소재의 경우 절연체로서 기존 QD 소재 대비 electro-luminescence(EL) 소자의 활성층으로 사용하는데 제약이 있어 PNEG을 이용한 EL 소자 제작에 대한 연구도 필요하다. 마지막으로, 기존 c-PNC 소재와 같이 Pb가 함유되지 않은 PNEG 소재의 개발이 선결되어야 할 것으로 판단된다. 이와 같은 해결 과제들에도 불구하고, PNEG 소재는 기존 c-QD 소재 대비 매우 우수한 안정성을 기반으로 고품위 고색재현 디스플레이용 색변환 소재로서 다양한 응용에 활용될 수 있을 것으로 기대된다.

Light-emitting Diodes based on a Densely Packed QD Film Deposited by the Langmuir-Blodgett Technique (랭뮤어-블롯젯을 통해 형성된 고밀도 양자점 박막과 이를 기반으로 한 발광다이오드)

  • Rhee, Seunghyun;Jeong, Byeong Guk;Roh, Jeongkyun
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.249-254
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    • 2022
  • To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.