• 분석과학
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• 제28권1호
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• pp.33-39
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• 2015

CdS 양자점 입자는 특정 파장의 빛을 방출하는 반도체 나노 결정으로 이러한 광학적 특성 때문에 질병 진단 시약, 광학기술, 미디어 산업 및 태양전지와 같은 다양한 분야에서 응용되는 물질이다. 방출하는 빛의 색은 입자의 크기에 의존하기 때문에 CdS 양자점 입자의 크기 및 크기분포를 정확하게 분석하는 것이 필요하다. 본 연구에서는 CdS 양자점 입자를 감마-선 조사법(${\gamma}$-ray irradiation method)을 이용하여 합성하고, 크기 및 크기 분포도를 결정하기 위하여 침강 장-흐름 분획법 (SdFFF)를 이용하였다. 침강 장-흐름 분획법을 이용한 CdS 양자점 입자의 정확한 분석을 위하여 분석조건의 최적화(유속, 외부장 세기, field-programming)에 대하여 조사되었다. 투과 전자 현미경(transmission electron microscopy, TEM)으로 확인된 단일 입자의 크기는 ~4 nm 였으며, 단일 입자의 응집으로 생성된 2차 입자 크기의 평균은 159 nm로 확인되었다. 첨가된 입자 안정제의 농도가 증가할수록 CdS 양자점 입자의 크기가 감소하는 경향성을 확인하였다. 침강 장-흐름 분획법, 투과 전자 현미경, 그리고 동적 광 산란법(dynamic light scattering, DLS)으로 결정된 CdS 양자점 크기는 각각 126, 159, 그리고 152 nm 였다. 본 연구의 결과로 침강 장-흐름 분획법은 비교적 넓은 크기분포를 갖는 다양한 종류의 무기입자의 크기 및 크기 분포도를 결정하는데 유용한 방법임을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.249.1-249.1
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• 2015

Quantum dots (QDs) are attracting growing attention for photovoltaic device applications because of their unique electronic, optical and physical properties. Lead sulfide (PbS) QDs are one of the most widely studied materials for the devices and known to have size-tunable properties. In this context, we investigated the relationship between the size of PbS QDs and two synthesizing conditions, a concentration of ligand, oleic acid in this work, and injection temperature. The inverted colloidal quantum dot solar cells based on the heterojunction of n-type zinc oxide layer and p-type PbS QDs were also fabricated. The size of the QDs and cell properties were observed to depend on both the QD synthesizing conditions, and hence the overall efficiency of the cell could vary even though the size of QDs used was same. The QD synthesizing conditions were finally optimized for the maximum cell efficiency.

• 한국재료학회지
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• 제31권1호
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• pp.16-22
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• 2021

In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/㎠ and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/㎠ and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.1-6
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• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.189-189
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• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Korean Chemical Engineering Research
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• 제54권2호
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• pp.200-205
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• 2016

본 연구에서는 최근 많은 분야에서 응용되고 있는 형광물질인 양자점을 생명고분자인 키토산과 반응시켜 얻은 나노입자와 금속성 골드 나노입자, 그리고 실버 나노입자로 외부를 코팅하여 나노약물 전달체를 얻을 수 있었다. 키토산은 생체고분자로써 무독성이며 인체적합성 고분자이다. 양자점은 2~10 nm의 크기를 가지는 반도체성 나노입자이다. 양자점은 생명분자나 생명단백질의 비슷한 크기를 갖으며, 그 크기에 따라 알맞은 가시광선 영역의 빛을 발산할 수 있도록 조절 가능하므로, 세포 바이오 마킹, 약물전달체 등에 효과적으로 쓰일 수 있다. 따라서 키토산 나노입자 말단의 아민기와 양자점의 카르복실기가 아미드결합을 형성하여 반응하게 조절하였다. 양자점의 독성을 완화시키기 위해 코팅재료로 사용된 금속성 나노입자 중 골드나노입자는 약 5~10 nm의 크기를 가지고 있고, 인체에 무해하고 음전하를 띄어서 양전하를 띈 고분자와 쉽게 복합체를 형성할 수 있는 장점이 있다. 향균성으로 잘 알려진 실버나노입자는 약 5 nm의 크기를 가지고 있고, 은 나노입자로 코팅을 하면 미생물 감염을 미리 방지 할 수 있는 장점을 가지고 있다. 본 연구에서 만들어진 QDs-키토산-골드 & QDs-키토산-실버 나노쉘의 입자크기는 약 100 nm의 크기를 갖었으며, 목적하는 바 형광특성을 잘 보여주고 있었다. 이러한 입자들은 정전기적 상호작용에 의하여 각각 골드나노입자와 실버나노입자로 코팅되어 나노 약물전달체로 완성할 수 있었다.