• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2905-2908
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• 2009

Immuno-sensing for high accurate and selective sensing was performed by fluorescence spectroscopy and surface plasmon resonance (SPR), respectively. Engineered assembly of two fluorescent quantum dots (QDs) with bovine serum albumin (BSA) and anti-BSA was fabricated in PBS buffer for fluorescence analysis of fluorescence resonance energy transfer (FRET). Furthermore, the same bio-moieties were immobilized on Au plates for SPR analysis. Naturally-driven binding affinity of immuno-moieties induced FRET and plasmon resonance angle shift in the nanoscale sensing system. Interestingly, the sensing ranges were uniquely different in two systems: e.g., SPR spectroscopy was suitable for highly accurate analysis to measure in the range of 10$^{-15{\sim}-10$ng/mL while the QD fluorescent sensing system was relatively lower sensing ranges in 10$^{-10{\sim}-6$ng/mL. However, the QD sensing system was larger than the SPR sensing system in terms of sensing capacity per one specimen. It is, therefore, suggested that a mutual assistance of FRET and SPR combined sensing system would be a potentially promising candidate for high accuracy and reliable in situ sensing system of immune-related diseases.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.953-958
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• 2007

Anchoring quantum dots (QDs) onto thermodynamically stable, large band gap oxide semiconductors is a very important strategy to enhance their quantum yields for solar energy conversion in both visible and near-IR regions. We describe a general procedure for anchoring a few chalcogenide QDs onto the titanium oxide layer. To anchor the colloidal QDs onto a mesoporous TiO2 layer, linker molecules containing both carboxylate and thiol functional groups were initially attached to TiO2 layers and subsequently used to capture dispersed QDs with the thiol group. Employing the procedure, we exploited cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) as inorganic sensitizers for a large band gap TiO2 layer of dye-sensitized solar cells (DSSCs). Their attachment was confirmed by naked eyes, absorption spectra, and photovoltaic effects. A few QD-TiO2 systems thus obtained have been characterized for photoelectrochemical solar energy conversion.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.86-90
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• 2017

We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of $E_{a1}$ and $E_{a2}$ for the InAs QDs were obtained $48{\pm}3meV$ and $229{\pm}23meV$, respectively. It was considered that the values of $E_{a1}$ and $E_{a2}$ are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.1
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• pp.113-120
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• 2022

Quantum dots (QDs) are attractive photosensitizer candidates for application not only in solar cells but also in solar hydrogen generation. For the prepartion of highly efficient QD-sensitized photoelectrodes, it is important to reduce electron recombination at the photoanode/electrolyte interface. Here, we study on the coating condition of ZnS passivation layers on the photoanodes in QD-sensitized solar cells (QDSCs). The ZnS passivation layers are coated by successive ionic layer adsorption and reaction method, and as the cation precursor, zinc acetate and zinc nitrate are empolyed. Due to the higher pH of cation precursor solution, the ZnS loading is improved when the zinc acetate is used, compared to the zinc nitrate. This improved loading of ZnS leads to the reduced electron recombination at the surface of photoanodes and the enhaced conversion efficiency of QDSCs from 6.07% to 7.45%.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.93-93
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• 1999

양자점(Quantum dot : QD)를 이용한 소자를 만들기 위해서는 수직방향으로의 적층이 필수적이다. 양자점의 적층은 수직적으로 같은 위치에 정렬하므로, 고려되어야 할 요소로는 양자점간의 파동함수의 중첩(coupling)에 의한 특성변화, 적층의 진행에 따른 변형(strain)의 증가로 기인되는 volcano 모양으로 나타나는 결함등이 있다. 이러한 결함은 nonradiative recombination center로 작용하여 오히려 효율이 떨어지게 되는 현상이 발생하게 되므로 본 연구에서는 적층횟수에 따른 발광효율의 변화를 조사하여 소자응용에 적절한 적층 조건을 조사하였다. 시료성장은 molecular beam epitaxy (MBE) 장치를 이용하여 GAs(100) 기판위에 GaAs buffer를 58$0^{\circ}C$에서 150nm 성장후 InAs/GaAs 양자점과 50$0^{\circ}C$에서 적층회수 1, 3, 6, 10, 15, 20회로 하였으며 적층성장 이후 GaAs cap layer를 성장하였다. GaAs spacing과 cap layer의 성장온도 역시 50$0^{\circ}C$이며 시료의 분석은 photoluminescence (PL)과 scanning transmission electron microscope (STEM)으로 하였다. 적층횟수를 바꾸어 시료를 성장하기 전에 적층횟수를 10회로 고정하고 spacing 두께를 2.8nm, 5.6nm, 11.2nm로 바꾸어 성장하여 PL 특성을 관찰하여본 결과 spacing이 2.8nm인 경우 수직적으로 정렬된 양자점 간에 coupling이 매우 커서 single layer QD의 PL peak에 비해 약 100nm 정도 파장이 증가하였고, spacing의 두께가 11.2nm 일 경우는 single layer QD와 거의 같은 파장의 빛을 방출하여 중첩이 거의 일어나지 않지만 두꺼운 spacing때문에 PL세기가 감소하였다. 한편, 적층회수에 따른 광학적 특성을 PL로 조사하여 본 결과 peak 파장은 적층횟수가 1회에서 3회로 증가했을 때는 blue shift 하다가 이후 적층이 증가함에 따라 red shift 하였다. 그리고 10층 이상의 적층에서는 excited state에서 기인된 peak이 검출되었다. 이렇나 원인은 적층수가 증가함에 따라 carrier life time이 증가하여 exciter state에 carrier가 존재할 확률이 증가하기 때문으로 생각된다. 또한 PL 세기가 다소 증가하다가 10층 이상의 경우는 다시 감소함을 알 수 있었다. 반치폭도 3층과 6층에서 가장 적은 값을 보였다. 이와 같은 결과는 결함생성과 관련하여 STEM 분석으로 해석되어질 수 있는데 6층 적층시는 양자점이 수직적으로 정렬되어 잘 형성됨을 관찰할 수 있었고 적층에 따른 크기 변화도 거의 나타나지 않았다. 그러나 10층 15층 적층시 몇가지 결함이 형성됨을 볼수 있었고 양자점의 정렬도 완전하게 이루어지지 않음을 볼 수 있었다. 그러므로 수직적층된 InAs 양자점의 광학적 특성은 성장조건에 따른 결함생성과 밀접한 관련이 있으며 상세한 논의가 이루어질 것이다.

• Journal of the Korean Chemical Society
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• v.48 no.3
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• pp.249-253
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• 2004

CdS semiconductor quantum dot (QD) structures in aqueous solution are fabricated by using a gamma-ray irradiation technique and their optical absorption spectra are investigated. Cadmium sulfate solution, 2-mercaptoethanol solution, and reducing agent $e^{-}_{aq}$ are employed to produce CdS molecules, leading to CdS quantum dots. The measured linear absorption spectra before and after g-ray irradiation clearly show exciton peaks between 300 nm and 400 nm, which indicate the formation of CdS QD's. It is also observed that the exciton peaks are red-shifted with increasing the g-ray irradiation time from 5 min to 15 min. Therefore, it is concluded that the mean QD sizes can be systematically controlled with the dosage of the g-ray irradiation.

• Journal of the Korean Chemical Society
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• v.59 no.1
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• pp.97-102
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• 2015

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3183-3184
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• 2013

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 1999.10c
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• pp.701-707
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• 1999

This study was initiated to collect background pollutant data for rural watersheds. The effluent/run-off polutant load and run-off ratio of the study areas were calculated and the two types of regression equations, L=a$.$Q+b and L=c$.$Qd where L and Q are the pollutant load(L) and discharge (Q), were derived. We acquired that the correlation coeffcients of the two types of regression equations were over than 90% except for BOD . Therefore, L-Q equations would be a measure to predict water quality of rural watersheds.