• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.183-186
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• 1999

A 900 71Hz RF band-pass amplifier for wireless communication systems is designed and fabricated. HSPICE simulation results show that the amplifier can achieve a tunable center frequency between 880 MHz and 920 MHz. The gain of designed amplifier is 19 dB at Q=88, and the power dissipation is about 61 mW under 3 V power supply by using the spiral inductor with negative-7m circuit and center frequency tunning circuit. The designed band-pass amplifier is implemented by using 0.6 um 2-poly-3-metal standard CMOS process.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.828-831
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• 1999

5,15-Bis(mesityl)-10,20-bis(4-amino)porphyrin was synthesized with meso-(mesityl)dipyrromethane and 4-nitrobenzaldehyde. It was characterized with $^1H$-NMR spectroscopy, UV spectrophotometer, and GC-MASS. In UV spectrum, Soret-band(438 nm) and Q-bands(526, 572, 611 nm) were confirmed. In NMR spectrum, the characteristic peak of porphyrin was detected at -2.65 ppm. Copolyimide containing porphyrin structure was synthesized with mesityl-$TPP(NH_2)$, 3,3',4,4'-benzophenonetetracarboxylic dianhydride(BTDA) and 2,2-bis(4-(4-aminophenoxy)phenyl) hexafluoropropane(BAPHF) and characterized with UV and FT-IR spectrophotometer. The $T_g$ and $T_m$ of the synthesized copolyimide were 220.7 and $369.2^{\circ}C$, respectively.

• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.119-128
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• 2001

The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensitively on the dimensions of the resonator. Therefore the embedding impedances with the various dimensions of the resonator for Q-band (33 ∼ 50 GHz) Gunn oscillator are calculated by using HFSS (High Frequency Structure Simulator). In this paper the comparisons between theoretical results of embedding impedances as a function of frequency and that of experimental results are described. And the oscillation frequency range could be predicted by using the theoretical evaluation methods which were proposed in this paper It shows that post size has an effect on the frequency tuning characteristics of Gunn oscillator.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.49-56
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• 1992

In this paper a band-pass filter using dielectric resonators with tuning screw and spacer at Ku-band is designed and constructed. For the filter design and construction, the coupling coefficient K between two resonators is numberically evaluated. The external quality factor Q$_{ex}$ is also calculated with a microstrip line which is necessary for the field excitation of dielectric resonator. The coupling between dielectric resonator and microstrip line depends mainly upon the magnetic field and is principal parameter in band-pass filter. The Q$_{ex}$ and K data which are evaluated by numberical analysis are practically applied to the filter construction. The theoretical Band-pass filter responses are given by Chebyshev approximation and they are nearly similar to the experimental results.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.62-66
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• 2010

In this article, a oscillator at X-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve Ihe phase noise and output power. The proposed oscillator is required low phase noise and high output power for the high performance frequency synthesizer. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. This character makes phase noise excellent. The oscillator using DHMR is oscillated in X-band so as to apply frequency synthesizer of radar systems. The output power is 4.33 dBm and the phase noise is -108 dBc/Hz at 100 kHz offset of carrier frequency.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.167-170
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) driver and power amplifiers for WLAN are presented using 0.2${\mu}{\textrm}{m}$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT). In each stage of the MMIC DA, a negative feedback is used for both broadband and good stability. The MMIC PA has employed a balanced configuration to overcome these difficulties and achieve high power with low VSWR over a wide frequency range. In the MMIC DA, the measurement results arc achieved as an input return loss under -4dB, an output return loss under -l0dB, a gain of 14dB, and a PldB of 17dB at C-band(36~ 44GHz). The chip size is 28mm$\times$1.3mm. The developed MMIC PA has the l0dB linear gain over 360Hz to 420Hz band and 22dBm PldB performance at 400Hz. The size of fabricated MMIC PA is 4mm x3mm. These results closely match with design results. This MMIC DA Sl PA will be used as the unit cells to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• The Journal of the Acoustical Society of Korea
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• v.19 no.3
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• pp.63-71
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• 2000

A new type of second-order digital peaking filters for professional-quality digital audio system is proposed whose frequency response can be elaborately controlled throughout the composite structure of a standard band-pass filter and a 0-dB bypass gain. The proposed method for designing the peaking filter uses the Q-compensation technique to prevent the Q-distortion caused by the variation of the gain factor and is reduced into a compact form which is proper to the real-time implementation. Methods are examined for computing its coefficients, which are exact and very straightforward to compute with small amount of the system resources.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.38.4-39
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• 2015

We have been monitoring Sgr A*, the radio source at the center of our galaxy, continuously since G2 encounter was predicted. KaVA is a powerful High resolution imaging array at K and Q band, and it has a excellent uv-coverage for Sgr A*. Together with 1-Gbps recording, our observations have provided high-quality images of Sgr A* at Q-band. Our images reveal a scatter-broadened, elliptical Gaussian structure of the source. We found no significant flux or structural variation of Sgr A* in 2013-2014, which is consistent with recent simulations by Kawashima et al. Continuous monitoring in the coming few years would be able to capture the possible flux increase in the source caused by G2, which will lead to better understanding of the accretion process around supermassive black holes.

• Journal of electromagnetic engineering and science
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• v.9 no.3
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• pp.159-163
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• 2009

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.