• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.99.2-99.2
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• 2012

혜성에서 방출되는 CH 분자는 핵에서 방출되어 태양 빛에 의해 분해되는 시간인 lifetime이 짧다. Lifetime이 짧은 분자는 모든 energy state로의 천이가 충분히 일어나 안정된 상태인 fluorescent equilibrium상태에 도달하기 전에 분해되어 버리기 때문에 혜성 속의CH의 특성을 파악하기 위해서는 Time-dependent calculation이 꼭 필요하다. Time-dependent calculation 은 CH 분자가 핵에서 방출된 후 시간에 따라 변하는population을 계산함으로써 각 혜성의 조건에 알맞은 CH model을 얻을 수 있어 혜성에서 방출되는 분자들을 연구하기에 적합한 방법이다. 우리는 BOES로 관측한 Machholz(C/2004 Q2), 103P/Hartley혜성을 포함한 Hyakutake (C/1996 B2)혜성과 Austin (1990V)혜성의 고분산 분광자료를 이용하여 Time-dependent calculation 을 실시하였고, 그 결과를 소개하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.135-138
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.83-86
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• 2002

Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and its shape is defined the interference of SP waves of different diffraction orders. Near-Held pattern analysis combined with the far-Held reflection and transmission measurements suggests that the SP eigenmodes of these arrays may be understood as those of ionic plasmon molecules.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.246-254
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• 2024

In this paper, a Quadrature Voltage Controlled Oscillator of a wireless transceiver operating in the 5GHz UNII band of the wireless LAN 802.11a standard was proposed. In addition, a new structure of low-noise, low-power Quadrature Coupled VCO was proposed using the quadrature phase output as an input to the switching current source. If this structure is applied to other circuits such as a structure in which the current source is separated or a common use of a current source, a phase noise characteristic of 17 dB better than the existing VCO can be obtained. In particular, it is designed to operate with low power in a simple structure compared to the existing in-phase QVCO. The circuit was designed to operate with a supply voltage of 1.2V by the TSMC 0.13㎛ RF CMOS process. The measured VCO has a large tuning range of 20% operating at frequencies of 4.5 - 5.6 GHz, and phase noise of -117 dBc/Hz or less was obtained at the 1 MHz offset. The output phase error of the proposed QVCO was less than 0.5 degrees, and the total power consumption was able to obtain 5.3 mW at 1.2V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1167-1172
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• 2013

This paper presents a X-band doppler radar with high conversion gain using a self-oscillating-mixer(SOM) that oscillation and frequency mixing is realized at the same time. To improve phase noise of the SOM oscillator, a ${\lambda}/2$ slotted square patch resonator(SSPR) was proposed, which shows high Q-factor of 175.4 and the 50 % reduced circuit area compared to the conventional resonator. To implement the low power system, low biasing voltage of 1.7 V was supplied. To enhance the conversion gain of the SOM, bias circuit is configured near the pinch-off region of transistor, and the conversion gain was optimized. The output power of the proposed SOM was -3.16 dBm at 10.65 GHz. A high conversion gain of 9.48 dB was obtained whereas DC Power consumption is relatively low about 7.65 mW. The phase noise is -90.91 dBc/Hz at 100 kHz offset. The figure-of-merit(FOM) of the proposed SOM was measured as -181.8 dBc/Hz, which is supplier to other SOMs by more than about 7 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.84-89
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• 2010

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop dual split ring resonator is presented for reducing the phase noise. The square-shaped dual split ring resonator having the form of the microstrip square open loop is investigated to reduce the phase noise. Compared with the microstrip square open loop resonator and the microstrip square open loop split ring resonator as well as the conventional microstrip line resonator, the microstrip square dual split ring resonator has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power supply has the phase noise of -123.2~-122.0 dBc/Hz @ 100 kHz in the tuning range, 11.74~11.75 GHz. The figure of merit (FOM) of this VCO is-214.8~-221.7 dBc/Hz dBc/Hz @ 100 kHz in the same tuning range. Compared with VCO using the conventional microstrip line resonator, VCO using microstrip square open loop resonator, the phase noise of VCO using the proposed resonator has been improved in 26 dB, 10 dB, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of Microbiology and Biotechnology
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• v.16 no.7
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• pp.1047-1052
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• 2006

A bile salt hydrolase (BSH) was purified from Lactobacillus plantarum CK 102 and its enzymatic properties were characterized. This enzyme was successfully purified using ion-exchange chromatography with Q-Excellose and hydrophobic interaction chromatography with Butyl-Excellose. The purified enzyme showed a single protein band of 37 kDa by SDS-polyacrylamide gel electrophoresis, which was similar to the molecular weight of known BSHs. The amino acid sequence of GLGLPGDLSSMSR, determined by MALDI-TOF, was identical to that of BSH of L. plantarum WCFS1. Although this BSH hydrolyzed all of the six major human bile salts, glycine-conjugated bile acid was the best substrate, based on its specificity and $K_{m}$ value. Among the various substrates, the purified enzyme maximally hydrolyzed glycocholate with apparent $K_{m}$ and $V_{max}$ values of 0.5 mM and 94 nmol/min/mg, respectively. The optimal pH of the enzyme ranged from 5.8 to 6.3. This enzyme was strongly inhibited by thiol enzyme inhibitors such as iodoacetate and periodic acid.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.3
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• pp.184-189
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• 1994

The heat treatment charaterristic of SCM 440 and B 16 steels has been investigated in various condition(A, B and C) to the effect of heat treatment on mechanical properties, and the following results were obtained. 1. We are obtained a good nitriding characteristic in bainitic structure than other heat treatment cycle in our experiment. 2. Fatigue characteristic has shown in order of B)C)A condition as heat treatment cycle. 3. The effective hardening depth and fatigue characteristic has been excellented in B 16 than SCM 440 after the nitriding and Q. T for Band C condition. 4. Nitriding depth has been increased in addition of Cr, V and the nitriding efficiency is increased as easiness of banite formation to wide range of cooling rate by addition of Mo. 5. The depth of compound layer in parallel surface, notched slop plane and notched bottom has been varied to the nitriding depth of 5, 4 and 3 ${\mu}$ in relatively uniform pattern after 10h nitriding treatment for SCM 440 into A condition.