• Proceedings of the CALSEC Conference
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• 2002.01a
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• pp.337-339
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• 2002

ㆍ시스템 구축 ㆍNetwork보안 ㆍ서버사양 ㆍApplication 구축 ㆍMaster Data ㆍLegacy System과 Interface ㆍReport(보고서 지원) ㆍOn-Going Support ㆍNew Process지원 ㆍProcess Remodeling ㆍ정기적인 Data Purge ㆍReport(보고서)(중략)

• Journal of Power System Engineering
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• v.14 no.2
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• pp.71-77
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• 2010

This paper was studied on microstructure, mechanical properties and corrosion characteristics of 316L stainless steel pipe welds was fabricated by orbital welding process. S-Ar specimen was fabricated by using Ar purge gas and S-$N_2$ specimen was fabricated by using $N_2$ purge gas. Ferrite was not detected in weld metal of S-$N_2$ specimen but the order of 0.13 Ferrite number(FN) was detected in weld metal of S-Ar specimen. Oxygen and Nitrogen concentration of S-$N_2$ specimen was higher than S-Ar specimen on HAZ and inner bead. The welds microstructural characteristics of S-Ar and S-$N_2$ specimens are similar. The microvickers hardness values of S-Ar and S-$N_2$ specimens welds were similar and average values of each regions were in the range of 174~194. The microstructures of S-Ar and S-$N_2$ weld metal were full austenite by primary austenite solidification. The Solidification structures of S-Ar and S-$N_2$ weld metal were formed directional dendrite toward bead center. The potentiodynamic polarization curve of STS 316L pipe welds exhibited typical active, passive, transpassive behaviour. Corrosion current density$(I_{corr.})$ and corrosion rate values of S-Ar specimen in 0.1M HCl solution were $0.95{\mu}A/cm^2$ and $0.31{\mu}A$/year respectively. The values of S-$N_2$ specimen were $1.4{\mu}A/cm^2$ and $0.45{\mu}m$/year.

• Journal of the Korean Society of Safety
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• v.22 no.4
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• pp.32-36
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• 2007

When the vacuum system for the process of $SiH_{4}$ gas used in the semiconductor and FPD field is partially vented from vacuum to atmospheric state, a fire often occurs due to auto-ignition of $SiH_{4}$ gas. In order to prevent the fire, the concentration of $SiH_{4}$ should be kept under LFL. This means that the higher capacity pump is needed to meet the process conditions as well as the condition that the concentration of $SiH_{4}$ should be kept under LFL. In this article, we conducted the injection of the dilution gas at the manifold between booster pump and dry pump compared with the typical method that the dilution gas was injected into inlet port of booster pump using computer simulation. According to the result, we can flow further more purge gas for safety without any change of the condition in the process chamber, which means that the higher capacity pump is not required for safety in some cases.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.2
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• pp.136-147
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• 2015

Dead-ended operation of Proton Exchange Membrane Fuel Cell(PEMFC) provides the simplification of fuel cell systems to reduce fuel consumption and weight of fuel cell. However, the water accumulation within the channel prohibits a uniform supply of fuel. Optimization of the purge strategy is required to increase the fuel cell efficiency since fuel and water are removed during the purge process. In this study, we investigated the average voltage output which depends on two interrelated conditions, namely, the supply gas pressure, purging valve open time. In addition, flow visualization was performed to better understand the water build-up on the anode side and cathode side of PEMFC in terms of a variety of the current density. We analyzed the correlation between the purge condition and water flooding.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.449-455
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• 2010

To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

• Proceedings of the KWS Conference
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• v.43
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• pp.43-45
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• 2004

Brazing between cemented carbides and steel for tool investigated by copper alloy brazing filler. Copper alloy filler was high liquidus temperature($990^{\circ}C$), therefor the shank(steel) occurred softening. Because brazing sample was necessary to heat treatment after brazing process. This experiment, influence of austenite time and purge temperature on heat treatment were investigated. As a result, these treatments obtained to high deflective strength In case of austenite time was short and purge temperature was low. Especially, nitride precipitated brazing layers was strongly influenced by the deflective strength.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1401-1405
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• 2010

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.1112-1114
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• 2017

The liquid rocket engine determines the routing of the component placement and layout by adapted the cycle method, the hardware configuration, the gimbal type on the functional implementation, and so on. In this paper, the conceptual routing of major pneumatic lines such as helium (He) supply pneumatic line for driving, many purge pneumatic line and main ignition line based on the main components installed in the liquid rocket engine was performed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.831-832
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• 2012