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http://dx.doi.org/10.5370/KIEE.2010.59.8.1401

Properties of HfO2 Insulating Film Using the ALD Method for Nonvolatile Memory Application  

Jung, Soon-Won (ETRI 융합부품.소재연구부문)
Koo, Kyung-Wan (호서대학교 국방과학기술학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.59, no.8, 2010 , pp. 1401-1405 More about this Journal
Abstract
We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.
Keywords
Atomic layer deposition; $HfO_2$; Metal-insulator-semiconductor; Nonvolatile memory;
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